SGS Thomson Microelectronics STTH3003CW Datasheet
®
HIGH FREQUENCY SECONDARY RECTIFIER
MAJOR PRODUCT CHARACTE RISTICS
STTH3003CW
I
F(AV)
V
RRM
2 x 15 A
300 V
Tj (max) 175 °C
(max) 1 V
V
F
trr (max) 40 ns
FEATURES AND BENE FITS
COMBINES HIGHEST RECOVERY AND
REVERSE VOLTAGE PERFORMANCE
ULTRA-FAST, SOFT AND NOISE-FREE
RECOVERY
DESCRIPTION
Dual center tap Fast Recovery Epitaxial Diodes
suited for Switch Mode Power Supply and high
frequency DC to DC converters.
Packaged in TO-247 this device is intended for
secondary rectification.
ABSOLUTE RATINGS (limiting values, per diode)
A2
K
A1
TO-247
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RSM
T
stg
Tj
October 1999 - Ed: 5A
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 135°C
Surge non repetitive forward current tp = 10 ms sinusoidal
Non repetitive peak reverse current tp = 20 µs square
Storage temperature range
Maximum operating junction temperature
δ = 0.5
Per diode
Per device
300 V
30 A
15
30
140 A
7A
-65 +175 °C
+175 ° C
A
1/5
STTH3003CW
THERMA L RE SISTA NC ES
Symbol Parameter Value Unit
R
th (j-c)
Junction to case Per diode
Total
R
th (c)
Coupling
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
2.0 °C/W
1.05
0.1
*
I
R
V
F
Reverse leakage
current
**
Forward voltage drop I
V
= 300 V Tj = 25°C
R
Tj = 125°C
= 15 A Tj = 25°C
F
Tj = 125°C
40 400
0.85 1
40 µA
1.25 V
Puls e tes t : * tp = 5 m s, δ < 2 %
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.75 x I
F(AV)
+ 0.017 I
F2(RMS)
RECOVERY CH ARACTE RIST ICS
Symbol Tests conditions Min. Typ. Max. Unit
trr
= 0.5 A Irr = 0.25 A IR = 1A Tj = 25°C
I
F
IF = 1 A dIF/dt = - 50 A/µ s VR = 30V
tfr
V
FP
I
= 15 A dIF/dt = 100 A/µs
F
V
= 1.1 x VF max.
FR
Tj = 25°C
30 ns
40
300 ns
3.5 V
2/5
S
factor
I
RM
Vcc = 200 V IF = 15 A
dI
/dt = 200A/µs
F
Tj = 125°C
0.3 -
8.5 A
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