SGS Thomson Microelectronics STTH2003CT, STTH2003CG, STTH2003CF Datasheet

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HIGH FREQUENCYSECONDARY RECTIFIER

MAJORPRODUCT CHARACTERISTICS

STTH2003CT/CG/CF

I

F(AV)

V

RRM

2 x 10 A

300 V

Tj (max) 175 °C

(max) 1 V

V

F

trr(max) 35 ns

FEATURESAND BENEFITS

COMBINESHIGHESTRECOVERYAND REVERSEVOLTAGEPERFORMANCE

ULTRA-FAST, SOFTANDNOISE-FREE RECOVERY

DESCRIPTION

Dual center tap Fast Recovery Epitaxial Diodes suited for Switch Mode Power Supply and high frequencyDC/DC converters.

Packaged in TO-220AB, ISOWATT220AB or

2

D

PAK, this device is especially intended for

secondaryrectification.

ABSOLUTE RATINGS (limitingvalues, perdiode)

A1

A2

TO-220AB

STTH2003CT

A1

K

A2

A1

2

PAK

D

STTH2003CG

A2

K

A1

A2

K

ISOWATT220AB

STTH2003CF

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

Repetitivepeakreverse voltage RMSforwardcurrent Averageforward

current δ =0.5

I

FSM

I

RSM

T

stg

Tj

October 1999 - Ed: 6C

Surgenonrepetitiveforwardcurrent tp = 10ms sinusoidal Non repetitiveavalanche current tp = 20 µs square Storagetemperaturerange Maximumoperatingjunction temperature

TO-220AB/ D2PAK ISOWATT220AB

Tc=140°C Perdiode

Perdevice

Tc=125°C

300 V

30 A 10

20

110 A

5A

-65+ 175 °C 175 °C

A

1/7

STTH2003CT/CG/CF

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th (j-c)

Junctionto case TO-220AB/ D2PAK

ISOWATT220AB

R

th (c)

TO-220AB/ D2PAK ISOWATT220AB

STATICELECTRICALCHARACTERISTICS (perdiode)

Symbol Parameter Testsconditions Min. Typ. Max. Unit

Per diode 2.5 °C/W

Total 1.3

Per diode 3.9

Total 3.2

Coupling 0.1 Coupling 2.5

*

I

R

Reverseleakage current

V

**

F

Forwardvoltagedrop I

=300V Tj = 25°C

V

R

Tj = 125°C

=10A Tj=25°C

F

Tj = 125°C

30 300

0.85 1

20 µA

1.25 V

Pulsetest: * tp= 5 ms, δ <2%

** tp = 380 µs, δ <2%

Toevaluatethemaximum conductionlossesuse the following equation: P= 0.75x I

F(AV)

+ 0.025I

F2(RMS)

RECOVERYCHARACTERISTICS

Symbol Tests conditions Min. Typ. Max. Unit

trr

tfr

V

FP

= 0.5 A Irr= 0.25A IR=1A Tj=25°C

I

F

I

=1A dIF/dt= - 50 A/µsVR=30V

F

I

=10A dIF/dt= 100 A/µs

F

=1.1 x VFmax.

V

FR

Tj = 25°C

25 ns 35

230 ns

3.5 V

2/7

S

factor

I

RM

Vcc =200V IF=10A dI

/dt = 200 A/µs

F

Tj = 125°C

0.3 8A

STTH2003CT/CG/CF

Fig.1:

Conductionlosses versus averagecurrent

(perdiode).

P1(W)

14

δ = 0.05

δ = 0.1

δ = 0.2

δ= 0.5

12 10

8

δ =1

6 4 2 0

024681012

IF(av)(A)

T

=tp/T tp

δ

Fig. 3-1: Relative variation of thermal impedance junctionto case versus pulse duration (TO-220AB

2

.

PAK)

/D

Zth(j-c)/Rth(j-c)

1.0

Fig. 2:

Forward voltage drop versus forward

current(maximum values,perdiode).

IFM(A)

200 100

Tj=125°C

Tj=25°C

10

Tj=75°C

1

0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00

VFM(V)

Fig. 3-2: Relative variation of thermal impedance

junction to case versus pulse duration (ISOWATT220AB).

Zth(j-c)/Rth(j-c)

1.0

0.8

δ = 0.5

0.6

δ = 0.2

0.4

δ = 0.1

0.2

0.0

Fig. 4:

dI

Single pulse

tp(s)

1E-3 1E-2 1E-1 1E+0

Peak reverse recovery current versus

/dt(90%confidence,per diode).

F

δ

=tp/T

T

tp

IRM(A)

16 14 12

VR=200V Tj=125°C

IF=2*IF(av)

IF=IF(av)

10

8 6

IF=0.5*IF(av)

4 2 0

0 50 100 150 200 250 300 350 400 450 500

dIF/dt(A/µs)

0.8

δ= 0.5

0.6

δ= 0.2

0.4

δ = 0.1

0.2

0.0

Fig. 5:

Single pulse

tp(s)

1E-2 1E-1 1E+0 1E+1

Reverserecovery time versusdI

δ

=tp/T

F

T

tp

/dt (90%

confidence,per diode).

trr(ns)

100

80

60

IF=IF(av)

IF=2*IF(av)

40

20

IF=0.5*IF(av)

dIF/dt(A/µs)

0

0 50 100 150 200 250 300 350 400 450 500

VR=200V Tj=125°C

3/7