SGS Thomson Microelectronics STTH20003TV Datasheet



HIGH FREQUENCY SECONDARY RECTIFIER

MAJORPRODUCTS CHARACTERISTICS

STTH20003TV

I

F(AV)

V

RRM

2 x 100 A

300 V

Tj (max) 150 °C

(max) 0.95 V

V

F

trr(max) 90 ns

FEATURESAND BENEFITS

COMBINESHIGHESTRECOVERYAND
REVERSEVOLTAGE PERFORMANCE

ULTRAFAST,SOFT AND NOISE-FREE
RECOVERY

ISOLATEDPACKAGE:
2500V

(ULAPPROVALPENDIN GDEVIC E)

RMS

LOWINDUCTANCEANDLOWCAPACITANCE
ALLOWSIMPLER LAYOUT

DESCRIPTION

Dual rectifiers suited for Switch Mode Power
Supplyand high frequencyDC to DC converters.

TM

Packagedin ISOTOP

, this deviceis intendedfor
use in low voltage, high frequency inverters, free
wheeling operation, welding equipment and
telecompower supplies.

K2

A1

A2

A2

ISOTOP

K1

K2

K1

A1

ABSOLUTE RATINGS

(limitingvalues,per diode)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

RSM

T

stg

Tj

ISOTOPisa registeredtrademarkof STMicroelectronics

October 1999- Ed: 2C

Repetitivepeakreversevoltage
RMSforwardcurrent
Averageforward current Tc= 85°C

Surgenonrepetitiveforwardcurrent tp = 10ms sinusoidal
NonRepetitive peak reversecurrent tp= 100µs square
Storagetemperature range
Maximumoperatingjunctiontemperature

δ =0.5

Per diode
Perdevice

300 V
180 A
100

200

1000 A

13 A

- 55 to+ 150 °C
150 °C

A

1/5

STTH20003TV

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th (j-c)

Junctionto case Perdiode

Total

R

th (c)

Coupling

Whenthe diodes1 and 2 areusedsimultaneously:

(diode 1) = P(diode1) x R

∆T

j

(perdiode)+ P (diode 2)x R

th(j-c)

th(C)

STATICELECTRICAL CHARACTERISTICS(perdiode)

Symbol Parameter TestsConditions Min. Typ. Max. Unit

0.55

0.35

0.1

°C/W

*

I

R

Reverseleakage
current

V

**

F

Forwardvoltagedrop I

=300 V Tj = 25°C

V

R

Tj = 125°C

= 100A Tj = 25°C

F

Tj = 125°C

0.2 2 mA

0.8 0.95

200 µA

1.20 V

Pulsetest : * tp= 5 ms, δ <2%

** tp = 380 µs, δ <2%

Toevaluate the maximum conductionlosses use the followingequation:

P = 0.75 x I

F(AV)

+0.0020x I

F2(RMS)

RECOVERYCHARACTERISTICS

Symbol Tests Conditions Min. Typ. Max. Unit

trr

tfr

V

FP

S

factor

= 0.5 A Irr= 0.25A IR=1A Tj=25°C

I

F

I

=1A dIF/dt= - 50 A/µsVR=30V

F

I

= 100 A dIF/dt= 200A/µsTj=25°C

F

VFR=1.1 x VFmax.
Vcc = 200V IF= 100A Tj =125°C

55 ns

90

1400 ns

5V

0.3 -

2/5

I

RM

dIF/dt = 200 A/µs

18 A