SGS Thomson Microelectronics STTH1L06U, STTH1L06, STTH1L06A Datasheet

®

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

MAIN PRODUCT CHARACTERISTICS

STTH1L06/U/A

I

F(AV)

V

RRM

(max) 75 µA

I

R

1A

600 V

Tj (max) 175 °C

(max) 1.05 V

V

F

trr (max) 80 ns

FEATURES AND BENEFITS

Ultrafast switching

■

■ Low reverse recovery current

Reduces switching & conduction losses

■

Low thermal resistance

■

DESCRIPTION

The STTH1L06/U/A, which is using ST Turbo 2
600V technology, is specially suited as boost
diode in discontinuous or critical mode power
factor corrections.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.

DO-41

STTH1L06

SMB

STTH1L06U

SMA

STTH1L06A

ABSOLUTE RATINGS (limiting values)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

T

stg

Repetitive peak reverse voltage 600 V
RMS forward current DO-41

SMA / SMB

Average forward current Tl = 120°C δ = 0.5 DO-41

TI = 135°C δ = 0.5 SMA
TI = 145°C δ = 0.5 SMB

Surge non repetitive forward
current

tp = 10 ms Sinusoidal DO-41
tp = 10 ms Sinusoidal SMA / SMB

10

7
1

1
1

30
20

Storage temperature range - 65 + 175 °C

Tj Maximum operating junction temperature + 175 °C

July 2002 - Ed: 3C

A

A

A

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STTH1L06/U/A

THERMAL PARAMETERS

Symbol Parameter Maximum Unit

R

th (j-l)

Junction to lead L = 10 mm DO-41 45 °C/W

SMA 30
SMB 25

R

th (j-a)

Note 1: Rth(j-a)is measured with a copper areaS=5cm2(see Fig 12)

Junction to ambient (note 1) L = 10 mm DO-41 70

STATIC ELECTRICAL CHARACTERISTICS

Symbol Parameter Tests conditions Min. Typ. Max. Unit

I

R

V

Reverse leakage
current

Forward voltage drop IF= 1 A Tj = 25°C 1.3 V

F

VR= 600V Tj = 25°C 1 µA

Tj = 150°C 10 75

Tj = 150°C 0.85 1.05

To evaluate the maximum conduction losses use the following equation :
P=0.89xI

F(AV)

+ 0.165 I

F2(RMS)

DYNAMIC ELECTRICAL CHARACTERISTICS

Symbol Parameter Tests conditions Min. Typ. Max. Unit

trr Reverse recovery

time

tfr Forward recovery

time

V

FP

Forward recovery
voltage

=1A dIF/dt=-50A/µs

I

F

Tj = 25°C 55 80 ns

VR= 30V
I

=1A dIF/dt = 100 A/µs

F

Tj = 25°C 50 ns

VFR= 3.5V
IF=1A dIF/dt = 100 A/µs Tj = 25°C 10 V

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STTH1L06/U/A

Fig.1: Conductionlossesversus average current.

P(W)

1.50

δ = 0.05

1.25

1.00

0.75

0.50

0.25

0.00

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3

δ = 0.1

δ = 0.2

IF(av)(A)

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Fig. 3-1: Relative variation of thermal impedance
junction ambient versus pulse duration (epoxy
FR4, Leads = 10mm)

Zth(j-a)/Rth(j-a)

1.0

DO-41

Lleads = 10mm

0.9

0.8

0.7

0.6

δ = 0.5

0.5

0.4

0.3

δ = 0.2

0.2

δ = 0.1

0.1

Single pulse

0.0

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tp(s)

δ

=tp/T

T

tp

Fig. 2: Forward voltage drop versus forward
current.

IFM(A)

100.0

Tj=150°C

Tj=150°C

(Maximum values)

10.0

(Maximum values)

Tj=150°C

Tj=150°C

(Typical values)

(Typical values)

Tj=25°C

1.0

(Maximum values)

VFM(V)

0.1

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

Fig. 3-2: Relative variation of thermal impedance

junction ambient versus pulse duration (epoxy
FR4, S = 1cm²)

Zth(j-a)/Rth(j-a)

1.0

SMB

0.9

0.8

0.7

0.6

δ = 0.5

0.5

0.4

δ = 0.2

0.3

δ = 0.1

0.2

0.1

Single pulse

0.0

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tp(s)

δ

=tp/T

T

tp

Fig. 3-3: Relative variation of thermal impedance
junction ambient versus pulse duration (epoxy
FR4)

Zth(j-a)/Rth(j-a)

1.0

SMA

0.9

0.8

0.7

0.6

δ = 0.5

0.5

0.4

δ = 0.2

0.3

δ = 0.1

0.2

0.1

Single pulse

0.0

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tp(s)

δ

=tp/T

T

tp

Fig. 4: Peak reverse recovery current versus

/dt (90% confidence).

dI

F

IRM(A)

2.5

VR=400V
Tj=125°C

2.3

2.0

1.8

1.5

1.3

IF=0.25 x IF(av)IF=0.25 x IF(av)

1.0

0.8

0.5

0.3

0.0
0 5 10 15 20 25 30 35 40 45 50

IF=0.5 x IF(av)IF=0.5 x IF(av)

IF=IF(av)IF=IF(av)

dIF/dt(A/µs)

IF=2 x IF(av)IF=2 x IF(av)

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