SGS Thomson Microelectronics STTH16003TV Datasheet



HIGH FREQUENCYSECONDARY RECTIFIER

MAJORPRODUCTS CHARACTERISTICS

STTH16003TV

I

F(AV)

V

RRM

2 x 80 A

300 V

Tj (max) 150 °C

(max) 0.95 V

V

F

trr(max) 80 ns

FEATURES AND BENEFITS

COMBINESHIGHESTRECOVERYAND
VOLTAGEPERFORMANCE

ULTRA-FAST,SOFTANDNOISE-FREE
RECOVERY

ISOLATEDPACKAGE:ISOTOP
Insulatedvoltage:2500 V

RMS

Capacitance:< 45 pF
LOWINDUCTANCE ANDLOWCAPACITANCE

ALLOWSIMPLIFIED LAYOUT

DESCRIPTION

Dual rectifiers suited for Switch Mode Power
SupplyandhighfrequencyDC to DCconverters.

TM

Packagedin ISOTOP

, thisdeviceis intendedfor
use in low voltage, high frequency inverters, free
wheeling operation, welding equipment and
telecompower supplies.

K2

A1

A2

A2

ISOTOP

K1

K2

K1

A1

ABSOLUTE RATINGS (limitingvalues, per diode)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

RSM

T

stg

Tj

ISOTOPis a registered trademarkof STMicroelectronics

October 1999 - Ed: 4D

Repetitivepeakreverse voltage
RMSforward current
Averageforward current Tc= 80°C

Surgenon repetitiveforwardcurrent tp = 10ms sinusoidal
Nonrepetitivepeak reverse current tp = 100 µs square
Storagetemperature range
Maximumoperatingjunctiontemperature

δ = 0.5

Per diode
Perdevice

300 V
180 A

80

160
800 A

5A

- 55 to+ 150 °C
150 °C

A

1/5

STTH16003TV

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th (j-c)

Junctionto case Perdiode

Total

R

th (c)

Coupling

Whenthe diodes 1 and 2 are used simultaneously:

(diode 1) = P (diode1) x R

∆T

j

(perdiode) + P (diode 2) x R

th(j-c)

th(C)

STATICELECTRICALCHARACTERISTICS(perdiode)

Symbol Parameter Tests conditions Min. Typ. Max. Unit

0.7

0.4

0.1

°C/W

*

I

R

Reverseleakage
current

V

**

F

Forwardvoltagedrop I

=300 V Tj = 25°C

V

R

Tj = 125°C

= 80A Tj=25°C

F

Tj = 125°C

0.2 2 mA

0.8 0.95

200 µA

1.2 V

Pulsetest : * tp= 5 ms, δ <2%

** tp = 380 µs, δ <2%

Toevaluate the maximumconductionlosses use the followingequation:

P = 0.75 x I

F(AV)

+0.0025x I

F2(RMS)

RECOVERYCHARACTERISTICS

Symbol Tests conditions Min. Typ. Max. Unit

trr

tfr

V

FP

S

factor

I

RM

= 0.5 A Irr= 0.25A IR=1A Tj=25°C

I

F

I

=1A dIF/dt= - 50 A/µsVR=30V

F

I

=80A dIF/dt = 200A/µsTj=25°C

F

VFR=1.1 xVFmax.
Vcc =200 V IF=80A

/dt = 200 A/µs

dI

F

Tj = 125°C

0.3 -

60 ns
80

1000 ns

5V

16 A

2/5