SGS Thomson Microelectronics STTH152 Datasheet
®
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
STTH152
I
F(AV)
V
RRM
1.5 A
200 V
Tj (max) 175 °C
(max) 0.75 V
V
F
trr(max) 32 ns
FEATURES AND BENEFITS
Very low conduction losses
■
■ Negligible switching losses
Low forward and reverse recovery times
■
High junction temperature
■
DESCRIPTION
The STTH152 which is using ST's new 200V
planar technology, is specially suited for switching
mode base drive & transistor circuits.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
ABSOLUTE RATINGS (limiting values)
DO-15
STTH152
Symbol Parameter Value Unit
V
RRM
I
F(AV)
I
FSM
T
Tj
stg
Repetitive peak reverse voltage
Average forward current TI = 115°C δ = 0.5
Surge non repetitive forward current tp=10 ms Sinusoidal
Storage temperature range
Maximum operating junction temperature
200 V
1.5 A
80 A
-65 +175 °C
175 °C
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-a)
* Oninfinite heatsink with 10mm lead length.
November 2001 - Ed:1A
Junction to ambient*
45 °C/W
1/5
STTH152
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
*
I
R
V
F
Pulse test:*tp=5ms,δ<2%
Reverse leakage current Tj = 25°C V
**
Forward voltage drop Tj = 25°CI
** tp = 380 µs, δ <2%
Tj = 125°C
Tj = 125°C
R=VRRM
= 1.5A
F
240
0.66 0.75
1.5 µA
0.95 V
To evaluate the maximum conduction losses use the following equation :
P=0.60xI
F(AV)
+0.10xI
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
trr Reverse recovery
time
tfr Forward recovery
time
V
FP
Forward recovery
=1A dIF/dt = -50A/µs
I
F
= 30V
V
R
= 1.5A dIF/dt = 50A/µs
I
F
=1.1xVFmax
V
FR
Tj = 25°C
Tj = 25°C
Tj = 25°C
50 ns
1.8 V
32 ns
voltage
2/5
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