SGS Thomson Microelectronics STTH1302CG, STTH1302CFP Datasheet
®
STTH1302CT/CG/CFP
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
2 x 6.5 A
200 V
Tj (max) 175 °C
V
(max) 0.95V
F
trr (max) 25 ns
FEATURES AND BENEFITS
Suited for SMPS
■
Low losses
■
Low forward and reverse recovery times
■
High surge current capability
■
■ High junction temperature
■ Insulated package: TO-220FPAB:
Insulation voltage = 2000 V
DC
Capacitance = 12 pF
DESCRIPTION
Dual center tap rectifier suited for Switch
ModePowerSuppliesandhighfrequencyDCto
DC converters.
This device is especially intended for use in low
voltage, high frequency inverters, free wheeling
and polarity protection applications.
A1
A2
K
TO-220AB
STTH1302CT
TO-220FPAB
STTH1302CFP
A1
A1
K
A2
K
K
A2
A1
D2PAK
STTH1302CG
A2
K
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitive peak reverse voltage 200 V
RMS forward current 20 A
Average forward
current δ = 0.5
TO-220AB / Tc = 155°C Per diode 6.5 A
2
D
PAK Tc = 145°C Per device 13
TO-220FPAB Tc = 135°C Per diode 6.5 A
Tc = 110°C Per device 13
I
FSM
T
stg
Surge non repetitive forward current tp = 10 ms sinusoïdal 70 A
Storage temperature range -65 to+175 °C
Tj Maximum operating junction temperature 175 °C
August 2002 - Ed: 1A
1/7
STTH1302CT/CG/CFP
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-c)
R
th (c)
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
I
R
V
Junction to case TO-220AB / D2PAK Per diode 3 °C/W
TO-220FPAB 5.5
TO-220AB / D
2
PAK Total 1.9 °C/W
TO-220FPAB 4.5
Coupling TO-220AB / D2PAK 0.8 °C/W
TO-220FPAB 3.5
(Per diode) + P(diode 2) x R
th(j-c)
* Reverse leakage Current Tj = 25°C VR=V
th(c)
RRM
6 µA
Tj = 125°C 3 60
* Forward Voltage drop Tj = 25°C IF= 6.5 A 1.1 V
F
Tj = 125°C I
Tj = 25°C I
Tj = 125°C I
= 6.5 A 0.81 0.95
F
= 13 A 1.25
F
= 13 A 0.95 1.1
F
Pulse test : * tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equation :
P=0.80xI
F(AV)
+ 0.023 x I
F2(RMS)
DYNAMIC CHARACTERISTICS (per diode)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
trr Reverse recovery time Tj = 25°C I
= 0.5 A
F
16 25 ns
Irr = 0.25 A
IR=1A
tfr Forward recovery time Tj = 25°C I
= 6.5 A
F
70 ns
dIF/dt = 100 A/µs
VFR=1.1xVFmax
V
FP
Forward recovery voltage Tj = 25°C IF= 6.5 A
2.2 V
dIF/dt = 100 A/µs
2/7
STTH1302CT/CG/CFP
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
P (W)F(AV)
8
7
6
5
4
3
2
1
0
012345678
δ = 0.05
δ = 0.1
I (A)F(AV)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 3: Forward voltage drop versus forward current (per diode).
I (A)FM
100.0
T=125°C
j
Typical values
T=125°C
10.0
1.0
j
Maximum values
T=25°C
j
Maximum values
Fig. 2: Peak current versus factor (per diode).
I (A)M
60
T
I
50
40
30
20
10
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
P=2W
P=10W
P=5W
δ
M
δ
=tp/T
tp
Fig. 4-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB /
2
P AK).
D
Zth / Rth(j-c) (j-c)
1.0
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
T
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Fig. 4-2: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220FPAB).
Zth / Rth(j-c) (j-c)
1.0
δ = 0.5
δ = 0.2
δ = 0.1
V (V)FM
Single pulse
tp(s)
0.1
1.E-02 1.E-01 1.E+00 1.E+01
δ
=tp/T
T
tp
tp(s)
0.1
1.E-03 1.E-02 1.E-01 1.E+00
δ
=tp/T
tp
Fig. 5-1: Non repetitive surge peak forward current versus overload duration per diode
(TO-220AB / D
I (A)M
100
90
80
70
60
50
40
30
20
IM
10
0
1.E-03 1.E-02 1.E-01 1.E+00
δ=0.5
2
PAK).
T =25°CC
T =75°CC
T =125°CC
t
t(s)
3/7
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