SGS Thomson Microelectronics STTH12R06FP, STTH12R06D Datasheet
®
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
MAIN PRODUCT CHARACTERISTICS
STTH12R06D/FP
I
F(AV)
V
RRM
(typ.) 7 A
I
RM
12 A
600 V
Tj (max) 175 °C
(max) 1.8 V
V
F
trr (max) 45 ns
FEATURES AND BENEFITS
Ultrafast switching
■
■ Low reverse recovery current
■ Reduces switching losses
Low thermal resistance
■
DESCRIPTION
The STTH12R06D/FP, which is using ST Turbo 2
600V technology, is specially suited as boost
diodeincontinuousmodepowerfactorcorrections
and hard switching conditions.
The device is also intended for use as a free
wheeling diode in powersupplies and otherpower
switching applications.
A
K
TO-220FPAC
STTH12R06FP
K
A
K
TO-220AC
STTH12R06D
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
Repetitive peak reverse voltage 600 V
RMS forward current 30 A
Average forward current 12 A
Surge non repetitive forward current tp = 10 ms Sinusoidal 100 A
Storage temperature range - 65 + 175 °C
Tj Maximum operatingjunction temperature + 175 °C
January 2002 - Ed: 1B
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STTH12R06D/FP
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-c)
Junction to case TO-220AC 1.7 °C/W
TO-220FPAC 4.4
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
V
Reverse leakage
current
Forward voltage drop IF= 12 A Tj= 25°C 2.9 V
F
VR= 600V Tj = 25°C 45 µA
Tj = 125°C 50 600
Tj = 125°C 1.4 1.8
To evaluate the maximum conduction losses use the following equation :
P=1.16xI
F(AV)
+ 0.053 I
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol Tests conditions Min. Typ. Max. Unit
trr I
= 0.5 A Irr = 0.25 A IR= 1A Tj = 25°C 25 ns
F
I
=1A dIF/dt=-50A/µs
F
45
VR= 30V
I
RM
S factor 0.2
VR= 400 V IF= 12A
dIF/dt = - 200A/µs
Tj = 125°C 7.0 8.4 A
Qrr 180 nC
tfr I
V
FP
=12A dIF/dt=96A/µs
F
VFR=1.1xVFmax
Tj = 25°C 200 ns
5.5 V
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