SGS Thomson Microelectronics STTH12003TV Datasheet
HIGH FREQUENCYSECONDARY RECTIFIER
MAJORPRODUCT CHARACTERISTICS
STTH12003TV
I
F(AV)
V
RRM
2 x 60 A
300 V
Tj (max) 150 °C
(max) 1 V
V
F
trr(max) 70 ns
FEATURESAND BENEFITS
COMBINESHIGHESTRECOVERYAND
REVERSEVOLTAGEPERFORMANCE
ULTRA-FAST,SOFT AND NOISE-FREE
RECOVERY
INSULATEDPACKAGE:ISOTOP
Insulatedvoltage:2500 V
RMS
Capacitance:< 45pF
LOWINDUCTANCE ANDLOW CAPACITANCE
ALLOWSIMPLIFIEDLAYOUT
DESCRIPTION
Dual rectifiers suited for Switch Mode Power
SupplyandhighfrequencyDC to DC converters.
Packaged in ISOTOP, this device is intended for
use in low voltage, high frequency inverters, free
wheeling operation, welding equipment and
telecompower supplies.
K2
A1
A2
A2
ISOTOP
K1
K2
K1
A1
ABSOLUTE RATINGS
(limitingvalues,perdiode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RSM
T
stg
Tj
ISOTOPis a registeredtrademark of STMicroelectronics
October 1999 - Ed: 4D
Repetitivepeak reversevoltage
RMSforwardcurrent
Averageforward current Tc = 85°C
Surgenonrepetitiveforwardcurrent tp = 10 ms sinusoidal
Nonrepetitivepeak reversecurrent tp = 100 µs square
Storagetemperaturerange
Maximumoperating junctiontemperature
δ = 0.5
Per diode
Per device
300 V
150 A
60
120
600 A
5A
- 55 to+ 150 °C
150 °C
A
1/5
STTH12003TV
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-c)
Junctionto case Perdiode
Total
R
th (c)
Coupling
Whenthe diodes1 and 2 areusedsimultaneously:
∆Tj(diode1) = P(diode1) x R
(perdiode) + P (diode 2) x R
th(j-c)
th(C)
STATICELECTRICAL CHARACTERISTICS(per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
0.8
0.45
0.1
°C/W
*
I
R
Reverseleakage
current
V
**
F
Forwardvoltagedrop I
=300 V Tj = 25°C
V
R
Tj = 125°C
= 60A Tj=25°C
F
Tj = 125°C
0.12 1.2 mA
0.85 1
120 µA
1.25 V
Pulsetest : * tp= 5ms, δ <2%
** tp = 380 µs, δ <2%
Toevaluatethemaximum conductionlosses use the followingequation:
P = 0.75 x I
F(AV)
+0.0042 x I
F2(RMS)
RECOVERYCHARACTERISTICS
Symbol Tests conditions Min. Typ. Max. Unit
trr
tfr
V
FP
= 0.5 A Irr= 0.25A IR=1A Tj=25°C
I
F
I
=1A dIF/dt= - 50 A/µsVR=30V Tj=25°C
F
=60A dIF/dt = 200A/µsTj=25°C
I
F
VFR=1.1 x VFmax. Tj = 25°C
55 ns
70
600 ns
5V
S
factor
I
RM
2/5
Vcc =200V IF=60A
dI
/dt = 200 A/µs
F
Tj = 125°C
0.3 14 A
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