SGS Thomson Microelectronics STTH110A, STTH110 Datasheet
®
HIGH VOLTAGE ULTRAFAST RECTIFIER
MAIN PRODUCT CHARACTERISTICS
STTH110/A
I
F(AV)
V
RRM
1A
1000 V
Tj (max) 175 °C
(max) 1.42 V
V
F
FEATURES AND BENEFITS
Low forward voltage drop
■
High reliability
■
■ High surge current capability
■ Soft switching for reducedEMI disturbances
■ Planar technology
DO-41
STTH110
DESCRIPTION
The STTH110, which is using ST ultrafast high
voltage planar technology, is specially suited for
free-wheeling, clamping, snubbering, demagnetizationinpowersuppliesandother power switching
SMA
STTH110A
applications.
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
V
(RMS)
I
F(AV)
RRM
Repetitive peak reverse voltage 1000 V
RMS voltage 700 V
Average forward current Tl = 100°C δ =0.5 DO-41 1 A
Tl = 125°C δ =0.5 SMA 1
I
FSM
Forward surge current t = 8.3 ms DO-41 20 A
SMA 18
T
stg
Storage temperature range - 50 + 175 °C
Tj Maximum operating junction temperature + 175 °C
January 2003 - Ed: 1
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STTH110/A
THERMAL PARAMETERS
Symbol Parameter Value Unit
R
th (j-l)
Junction to lead L = 10 mm DO-41 45 °C/W
SMA 30
R
th (j-a)
Junction to ambient L = 10 mm DO-41 110
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
Reverse leakage current VR= 1000V Tj = 25°C 10 µA
Tj = 125°C 50
V
Forward voltage drop IF= 1 A Tj = 25°C 1.7 V
F
Tj = 150°C 0.98 1.42
To evaluate the maximum conduction losses use the following equation :
P=1.20xI
F(AV)
+ 0.225 x I
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
t
rr
Reverse recovery time IF= 0.5 A
Tj = 25°C 75 ns
Irr = 0.25 A IR=1A
t
fr
V
FP
Forward recovery time IF=1A
Forward recovery voltage 18 V
dIF/dt = 50 A/µs
VFR=1.1xVFmax
Tj = 25°C 300 ns
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