SGS Thomson Microelectronics STTH102A Datasheet
®
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
STTH102A
I
F(AV)
V
RRM
1A
200 V
Tj (max) 175 °C
(max) 0.78 V
V
F
trr (max) 20 ns
FEATURES AND BENEFITS
Very low conduction losses
■
Negligible switching losses
■
Low forward and reverse recovery times
■
High junction temperature
■
DESCRIPTION
The STTH102A, which is using ST’s new 200V
planar technology, is specially suited for switching
mode base drive & transistor circuits.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
SMA
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(AV)
I
FSM
T
stg
Repetitive peak reverse voltage 200 V
Average forward current Tl = 148°C δ =0.5 1 A
Surge non repetitive forward current tp = 10 ms Sinusoidal 40 A
Storage temperature range + 175 °C
Tj Maximum operating junction temperature 175 °C
THERMAL PARAMETERS
Symbol Parameter Maximum Unit
R
th (j-l)
July 2002 - Ed: 1A
Junction to lead 30 °C/W
1/5
STTH102A
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
* Reverse leakage
R
current
V
* Forward voltage drop Tj = 25°C I
F
Tj = 25°C V
R=VRRM
1 µA
Tj = 125°C 1 25
= 700 mA 0.90
F
I
= 1 A 0.97
F
Tj = 125°C I
Pulse test: * tp = 5ms, δ <2%
** tp = 380µs, δ <2%
= 1 A 0.68 0.78
F
To evaluate the maximum conduction losses use the following equation :
P=0.65xI
F(AV)
+ 0.130 I
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
trr Reverse recovery
time
tfr Forward recovery
time
V
FP
Forward recovery
Tj = 25°C IF= 0.5 A Irr = 0.25 A
IR=1A
Tj = 25°C I
=1A dIF/dt=50A/µs
F
VFR=1.1xVFmax
Tj = 25°C I
=1A dIF/dt=50A/µs 1.8 V
F
12 20 ns
50 ns
voltage
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