SGS Thomson Microelectronics STTH102 Datasheet
®
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
STTH102
I
F(AV)
V
RRM
1A
200 V
Tj (max) 175 °C
(max) 0.78 V
V
F
trr (max) 20 ns
FEATURES AND BENEFITS
Very low conduction losses
■
■ Negligible switching losses
Low forward and reverse recovery times
■
High junction temperature
■
DO-41
STTH102
DESCRIPTION
The STTH102, which is using ST's new 200V
planar technology, isspeciallysuitedfor switching
mode base drive & transistor circuits.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(AV)
I
FSM
T
stg
Repetitive peak reverse voltage 200 V
Average forward current Tl = 130°C δ =0.5 1 A
Surge non repetitive forward current tp = 10 ms Sinusoidal 50 A
Storage temperature range - 65 + 175 °C
Tj Maximum operating junction temperature + 175 °C
THERMAL PARAMETERS
Symbol Parameter Maximum Unit
R
th (j-a)
* Oninfiniteheatsink with 10mm length.
August 2001 - Ed: 2A
Junction to ambient* 50 °C/W
1/5
STTH102
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
* Reverse leakage current Tj = 25°C V
R
R=VRRM
Tj = 125°C 1 25
V
** Forward voltage drop Tj = 25°C I
F
= 1A 0.97 V
F
Tj = 125°C 0.68 0.78
Pulse test: * tp = 5ms, δ <2%
** tp = 380µs, δ <2%
To evaluate the maximum conduction losses use the following equation :
P=0.65xI
F(AV)
+ 0.130 x I
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
1 µA
trr Reverse recovery
time
tfr Forward recovery
time
V
FP
Forward recovery
voltage
= 0.5 A Irr = 0.25 A
I
F
IR=1A
I
=1A dIF/dt = 50A/µs
F
VFR=1.1xVFmax
Tj = 25°C 12 20 ns
Tj = 25°C 50 ns
Tj = 25°C 1.8 V
2/5
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