SGS Thomson Microelectronics STTA9012TV2, STTA9012TV1 Datasheet



STTA9012TV1/2

TURBOSWITCH

TM

ULTRA-FASTHIGH VOLTAGE DIODE

MAINPRODUCTCHARACTERISTICS

I

F(AV)

V

RRM

t

(typ) 65ns

rr

(max) 1.85V

V

F

2 x 45A

1200V

FEATURESAND BENEFITS

ULTRA-FAST,SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN

BOTH THE DIODE AND THE COMPANION
TRANSISTOR.

HIGH FREQUENCY AND/OR HIGH PULSED
CURRENTOPERATION.

HIGHREVERSEVOLTAGECAPABILITY.
LOW INDUCTANCEPACKAGE< 5 nH.
INSULATEDPACKAGE:

Electricalinsulation : 2500V

RMS

Capacitance: <45pF.

K2 A2

K1 A1

STTA9012TV1

ISOTOP

A2

K2K1A1

STTA9012TV2

TM

DESCRIPTION

TURBOSWITCH 1200V drastically cuts losses in
allhighvoltageoperationswhich requireextremely
fast,soft andnoise-freepower diodes.Due to their
optimizedswitchingperformancesthey also highly
decrease power losses in any associated

They are particularly suitable in motor control
circuitries, or in the primaryof SMPS as snubber,
clampingor demagnetizingdiodes. They are also
suitable for secondary of SMPS as high voltage

rectifierdiodes.
switching IGBT or MOSFET in all ”freewheel
mode”operations.

ABSOLUTE RATINGS (limiting values,per diode)

Symbol Parameter Value Unit

V

RRM

V

RSM

I

F(RMS)

I

FRM

I

FSM

T

stg

T

j

ISOTOPand TURBOSWITCH are trademarks of STMicroelectronics.

November1999 - Ed: 6B

Repetitivepeak reverse voltage 1200 V
Non repetitivepeakreverse voltage 1200 V
RMSforwardcurrent 150 A
Repetitivepeak forward current tp= 5 µs F = 5kHzsquare 700 A
Surgenon repetitiveforwardcurrent tp= 10ms sinusoidal 420 A
Storagetemperaturerange - 65 to+ 150 °C
Maximumoperatingjunction temperature 150 °C

1/8

STTA9012TV1/2

THERMAL ANDPOWER DATA (perdiode)

Symbol Parameter Testconditions Value Unit

R

th(j-c)

Junctionto casethermalresistance Perdiode 0.85 °C/W

Total 0.48
Coupling 0.1

P

1

Conductionpowerdissipation I

= 45Aδ=0.5

F(AV)

94 W

Tc=70°C

P

max

Totalpower dissipation

Tc=62°C 104 W

Pmax= P1 + P3 (P3 =10% P1)

STATICELECTRICALCHARACTERISTICS(per diode)

Symbol Parameter Test conditions Min Typ Max Unit

* Forwardvoltagedrop IF=45A Tj = 25°C

V

F

Tj = 125°C 1.3

I

** Reverseleakage current VR=0.8x

R

V

RRM

Vto Thresholdvoltage Ip< 3.I

Tj = 25°C
Tj = 125°C3

Tj = 125°C 1.57 V

AV

2.05

1.85
200

12

Rd Dynamicresistance 6 m

Test pulses : * tp = 380µs, δ <2%

** tp = 5ms ,

δ

<2%

To evaluatethe maximumconductionlossesuse the following equation:
P=V

toxIF(AV)

+rdxI

F2(RMS)

V

µA

mA

Ω

DYNAMICELECTRICALCHARACTERISTICS(perdiode)
TURN-OFF SWITCHING

Symbol Parameter Test conditions Min Typ Max Unit

t

rr

Reverserecovery
time

I

RM

Maximumreverse
recoverycurrent

S factor Softnessfactor Tj = 125°CV

Tj = 25°C
I

= 0.5A IR=1A Irr= 0.25A

F

=1A dIF/dt =-50A/µsVR=30V

I

F

65

115

Tj = 125°C VR= 600V IF=45A

/dt = -360A/µs

dI

F

/dt = -500A/µs50

dI

F

= 600V IF=45A

R

/dt = -500A/µs 1.2

dI

F

60

TURN-ON SWITCHING

Symbol Parameter Test conditions Min Typ Max Unit

t

fr

V

Fp

Forwardrecoverytime Tj = 25°C

I

=45A, dIF/dt =360 A/µs

F

measuredat 1.1× V

Peakforward voltage Tj= 25°C

=45A,dIF/dt = 360A/µs

I

F

=45A,dIF/dt = 500A/µs30

I

F

max

F

900

30

ns

A

-

ns

V

2/8

STTA9012TV1/2

Fig. 1: Conduction losses versus averagecurrent

(perdiode).

P1(W)

100

δ = 0.1

δ = 0.2

δ= 0.5

80

60

δ =1

40

T

20

=tp/T

0

IF(av) (A)

0 5 10 15 20 25 30 35 40 45 50

δ

tp

Fig. 3: Relative variation of thermal impedance
junctionto caseversuspulse duration (per diode).

Zth(j-c)/Rth(j-c)

1.0

0.8

0.6

δ = 0.5

0.4

δ = 0.2
δ = 0.1

0.2

Single pulse

0.0
1E-3 1E-2 1E-1 1E+0 5E+0

tp(s)

Fig. 2: Forward voltage drop versus forward

current(maximumvalues, perdiode).

IFM(A)

500

Tj=125°C

100

10

VFM(V)

1

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Fig.4: PeakreverserecoverycurrentversusdIF/dt
(90%confidence,per diode).

IRM(A)

80

VR=600V

70

Tj=125°C

60

IF=IF(av)

50
40
30
20
10

0

0 100 200 300 400 500

dIF/dt(A/µs)

IF=2*IF(av)

IF=0.5*IF(av)

Fig. 5: Reverse recoverytime versus dIF/dt (90%
confidence,perdiode).

trr(ns)

1000

VR=600V

800

600

IF=2*IF(av)

IF=IF(av)

400

200

dIF/dt(A/µs)

0

0 100 200 300 400 500

Tj=125°C

IF=0.5*IF(av)

Fig. 6: Softnessfactor(tb/ta) versusdIF/dt (typical
values).

S factor

1.60

1.40

1.20

1.00

0.80

0.60

IF<2*IF(av)
VR=600V

Tj=125°C

dIF/dt(A/µs)

0 100 200 300 400 500

3/8