SGS Thomson Microelectronics STTA6006TV2, STTA6006TV1, STTA3006PI, STTA3006P Datasheet

STTA3006P/PI



TURBOSWITCH



ULTRA-FASTHIGH VOLTAGE DIODE

MAINPRODUCTCHARACTERISTICS

I

F(AV)

V

RRM

(typ) 35ns

t

rr

(max) 1.5V

V

F

30A/ 2 x 30A

600V

FEATURESAND BENEFITS

SPECIFICTO”FREEWH EELMOD E”OPERATIONS:
FREEWHEELORBOOSTERDIODE

ULTRA-FAST ANDSOFT RECOVERY
VERY LOW OVERALL POWER LOSSES IN

BOTH THE DIODE AND THE COMPANION
TRANSISTOR

HIGHFREQUENCY OPERATIONS
INSULATEDPACKAGE: ISOTOP& DOP3I

Electricalinsulation: 2500V

RMS

Capacitance< 12 pF (DOP3I)
Capacitance< 45 pF (ISOTOP)

STTA6006TV1/2

K2 A2

A1K1

STTA6006TV1

ISOTOP

A2A1K1

K2

STTA6006TV2

TM

DESCRIPTION

K

The TURBOSWITCH is a very high performance
series of ultra-fast high voltagepowerdiodes from
600Vto1200V.
TURBOSWITCH family, drastically cuts losses in
boththe diodeand the associatedswitching IGBT
or MOSFET in all ”freewheel mode” operations
and is particularly suitable and efficient in motor

A

K

K

controlfreewheelapplicationsandin boosterdiode
applicationsin power factorcontrol circuitries.
Packaged either in ISOTOP, DOP3I or SOD93

SOD93

STTA3006P

DOP3I

STTA3006PI

these 600V devices are particularly intended for
useon 240V domesticmains.

ABSOLUTE RATINGS

(limitingvalues, per diode)

Symbol Parameter Value Unit

V

RRM

V

RSM

I

F(RMS)

I

FRM

I

FSM

T

T

stg

TM :TURBOSWITCH is a trademark of STMicroelectronics

Repetitivepeak reversevoltage 600 V
Non repetitivepeak reverse voltage 600 V
RMSforwardcurrent 50 A
Repetitivepeak forward current tp=5µs F=5kHzsquare 300 A
Surgenon repetitiveforward current tp=10ms sinusoidal 230 A
Maximumoperating junctiontemperature 150 °C

j

Storagetemperaturerange -65to 150 °C

A

November 1999 - Ed: 4C

1/9

STTA6006TV1/2/ STTA3006P/PI

THERMAL AND POWER DATA

(Perdiode)

Symbol Parameter Testconditions Value Unit

R

th(j-c)

Junctiontocasethermal
resistance

ISOTOP Perdiode 1.4 °C/W

Total 0.75
DOP3I 1.8
SOD93 1.2

R

th(c)

P

1

Conductionpower dissipation
I

=30A δ =0.5

F(AV)

ISOTOP Coupling 0.1 °C/W
ISOTOP Tc= 74°C54W
DOP3I Tc= 52°C
SOD93 Tc= 85°C

P

max

Totalpowerdissipation
Pmax= P1 + P3 (P3= 10% P1)

ISOTOP Tc=66°C60W
DOP3I Tc=42°C
SOD93 Tc=78°C

STATICELECTRICALCHARACTERISTICS

Symbol Parameter Test conditions Min Typ Max Unit

V

F*

I

R**

V

to

Forwardvoltage drop IF=30A Tj= 25°C

Tj = 125°C 1.25

Reverseleakage current VR=0.8×

V

RRM

Thresholdvoltage Ip < 3.I

Tj=25°C
Tj = 125°C3

Tj = 125°C 1.15 V

AV

1.75

1.5

150

8

rd Dynamicresistance 11 mΩ

Test pulses : *tp = 380 µs, δ <2%

** tp = 5 ms, δ <2%

V
V

µA

mA

To evaluatethe maximumconductionlossesuse thefollowingequation :
P=V

toxIF(AV)

+rdxI

F2(RMS)

DYNAMICELECTRICALCHARACTERISTICS
TURN-OFF SWITCHING

Symbol Parameter Test conditions Min Typ Max Unit

t

rr

Reverserecovery
time

I

RM

Maximumreverse
recoverycurrent

S factor Softnessfactor Tj= 125°CV

2/9

Tj= 25°C

= 0.5 A IR= 1A Irr= 0.25A

I

F

I

=1A dIF/dt =-50A/µsVR=30V

F

35

65

Tj= 125°C VR =400V IF=30A

/dt= -240A/µs

dI

F

dI

/dt= -500A/µs20

F

= 400V IF=30A

R

/dt= -500A/µs 0.40

dI

F

19

ns

A

-

STTA6006TV1/2 / STTA3006P/PI

TURN-ON SWITCHING

Symbol Parameter Test conditions Min Typ Max Unit

t

fr

Forwardrecovery
time

V

Fp

Peakforward voltage Tj= 25°C

Tj= 25°C
I

=30A,dIF/dt= 240 A/µs

F

measuredat, 1.1

I

=30A,dIF/dt= 240 A/µs

F

× V

max

F

600

12

ns

V

Fig.1: Conductionlossesversusaveragecurrent.

P1(W)

60

50

40

30

20

10

0

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30

=tp/T

T

tp

=0.1

=1

=0.5

=0.2

IF(av)(A)

Fig. 3: Relative variation of thermal transient

impedancejunctionto case versuspulse duration.

Fig. 2: Forward voltage drop versus forward
current.

VFM(V)

3.50

3.00

MAXIMUM VALUES

2.50

2.00

o

Tj=125 C

1.50

1.00

0.50

0.00

0.1 1 10 100

IFM(A)

Fig. 4: Peak reverse recovery current versus

dI

/dt.

F

IRM(A)

45

90% CONFIDENCE Tj=125 C

40

VR=400V

35
30
25
20
15
10

5
0

0 100 200 300 400 500 600 700 800 9001000

o

IF= 60A

IF=30A

IF=15A

dIF/dt(A/ s)

3/9