SGS Thomson Microelectronics STTA512F, STTA512D, STTA512B Datasheet

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STTA512D/F/B

TURBOSWITCH

ULTRA-FASTHIGH VOLTAGE DIODE



MAINPRODUCTCHARACTERISTICS

I

F(AV)

V

RRM

t

(typ) 45ns

rr

(max) 2.0V

V

F

5A

1200V

FEATURESAND BENEFITS

SPECIFICTO THEFOLLOWINGOPERATIONS:
SNUBBING OR CLAMPING,
DEMA GNE T IZATIO N AND RECT IFIC A T IO N

ULTRA-FAST,SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN

BOTH THE DIODE AND THE COMPANION
TRANSISTOR.

HIGH FREQUENCY AND/OR HIGH PULSED
CURRENTOPERATION.

HIGHREVERSEVOLTAGECAPABILITY
INSULATEDPACKAGE: ISOWATT220AC

Electricalinsulation : 2000VDC
Capacitance: 12pF.

K

TO-220AC

STTA512D

A

K

K

DPAK

STTA512B

A

K

ISOWATT220AC

STTA512F

A

NC

DESCRIPTION

TURBOSWITCH 1200V drastically cuts losses in
all highvoltageoperationswhichrequireextremely
fast,softand noise-freepower diodes.Due to their
optimizedswitchingperformancesthey also highly
decrease power losses in any associated

They are particularly suitable in motor control
circuitries, or in the primary of SMPSas snubber,
clamping or demagnetizingdiodes. They are also
suitable for secondary of SMPS as high voltage

rectifierdiodes.
switching IGBT or MOSFET in all ”freewheel
mode”operations.

ABSOLUTE RATINGS

(limitingvalues)

Symbol Parameter Value Unit

V

RRM

V

RSM

I

F(RMS)

Repetitivepeakreversevoltage 1200 V
Non repetitivepeakreverse voltage 1200 V
RMSforwardcurrent TO-220AC/ DPAK 20 A

ISOWATT220AC 10 A

I

FRM

I

FSM

T

stg

T

TURBOSWITCH is a trademark of STMicroelectronics.

November 1999 - Ed:4A

Repetitivepeakforward current tp = 5 µs F =5kHzsquare 70 A
Surgenon repetitiveforward current tp = 10ms sinusoidal 45 A
Storagetemperaturerange - 65 to + 150 °C
Maximumoperatingjunctiontemperature 150 °C

j

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STTA512D/F/B

THERMAL ANDPOWERDATA

Symbol Parameter Conditions Value Unit

R

P

th(j-c)

P

1

max

Junctionto casethermal
resistance

Conductionpowerdissipation

=5Aδ=0.5

I

F(AV)

Totalpower dissipation
Pmax= P1+ P3 (P3 =10% P1)

TO-220AC/DPAK
ISOWATT220AC

TO-220AC/DPAK
ISOWATT220AC

TO-220AC/DPAK
ISOWATT220AC

Tc= 102°C
Tc= 84°C

Tc= 98°C
Tc= 78°C

4.0

5.5
12 W

13 W

STATICELECTRICAL CHARACTERISTICS

Symbol Parameter Testconditions Min Typ Max Unit

V

F*

I

R**

Forwardvoltagedrop IF=5A Tj =25°C

Reverseleakagecurrent VR=0.8x

V

RRM

Vto Thresholdvoltage Ip < 3.I

AV

Tj = 125°C 1.35
Tj = 25°C

Tj = 125°C 0.3
Tj = 125°C 1.57 V

2.2

2.0

100

2.0

Rd Dynamicresistance 86 mΩ

Test pulses : *tp= 380µs,

** tp= 5 ms ,

δ
δ

<2%
<2%

Toevaluate the maximum conductionlosses use the following equation:
P=V

toxIF(AV)

+rdxI

F2(RMS)

°C/W

V
V

A

µ

mA

DYNAMICELECTRICALCHARACTERISTICS
TURN-OFF SWITCHING

Symbol Parameter Testconditions Min Typ Max Unit

t

rr

I

RM

S factor Softnessfactor Tj = 125°CV

Reverserecovery
time

Maximumreverse
recoverycurrent

Tj = 25°C

=0.5 A IR= 1A Irr=0.25A

I

F

I

=1A dIF/dt=-50A/µsVR=30V

F

45

95

Tj = 125°C VR = 600V IF=5A

/dt= -40A/µs

dI

F

/dt= -500A/µs20

dI

F

=600V IF=5A

R

dI

/dt= -500A/µs 1.2

F

7.5

TURN-ON SWITCHING

Symbol Parameter Testconditions Min Typ Max Unit

t

fr

Forwardrecovery
time

V

Fp

Peak forward voltage Tj = 25°C

Tj = 25°C
I

=5A, dIF/dt= 40A/µs

F

measuredat1.1

I

=5A,dIF/dt =40 A/µs

F

=40A,dIF/dt = 500A/µs50

I

F

VFmax

×

900

35

ns

A

/

ns

V

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STTA512D/F/B

Fig.1: Conductionlosses versusaveragecurrent.

P1(W)

13
12

δ = 0.1

δ =0.2

δ= 0.5

11
10

9
8
7

δ =1

6
5
4
3
2
1
0

0123456

IF(av) (A)

Fig. 3: Peak reverse recovery current versus

dI

/dt(90% confidence).

F

IRM(A)

40

VR=600V
Tj=125°C

30

20

10

0

0 100 200 300 400 500

IF=2*IF(av)

IF=IF(av)

dIF/dt(A/µs)

Fig. 1: Forward voltage drop versus forward

current(maximumvalues).

IFM(A)

100.00

Tj=125°C

10.00

1.00

0.10

0.01

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

VFM(A)

Fig. 4: Relative variation of thermal impedance

junctionto case versus pulse duration(TO-220AC
andDPAK).

Zth(j-c)/Rth(j-c)

1.0

0.8

0.6

δ = 0.5

0.4

δ = 0.2

0.2

δ = 0.1

0.0

Single pulse

1E-4 1E-3 1E-2 1E-1 1E+0

tp(s)

Fig. 5: Relative variation of thermal impedance

junction to case versus pulse duration
(ISOWATT220AC).

Zth(j-c)/Rth(j-c)

1.0

0.8

0.6

δ = 0.5

0.4

δ= 0.2

0.2

δ = 0.1

Single pulse

0.0
1E-3 1E-2 1E-1 1E+0 1E+1

tp(s)

Fig. 6: Reverserecovery timeversus dIF/dt (90%

confidence).

trr(ns)

400
350
300
250
200

IF=2*IF(av)

150
100

50

0

0 100 200 300 400 500

IF=IF(av)

dIF/dt(A/µs)

VR=600V
Tj=125°C

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