SGS Thomson Microelectronics STTA506F, STTA506D, STTA506B Datasheet



STTA506D/F/B

TURBOSWITCH

ULTRA-FASTHIGH VOLTAGE DIODE



MAINPRODUCTSCHARACTERISTICS

I

F(AV)

V

RRM

(typ) 20ns

t

rr

(max) 1.5V

V

F

5A

600V

FEATURESAND BENEFITS

SPECIFICTO”FREEW HEELMODE”OPERATIO NS:
FREEWHEELORBOOSTERDIODE

ULTRA-FAST ANDSOFTRECOVERY
VERY LOW OVERALL POWER LOSSES IN

BOTH THE DIODE AND THE COMPANION
TRANSISTOR

HIGHFREQUENCY OPERATIONS
INSULATEDPACKAGE: ISOWATT220AC

Electricalinsulation: 2000VDC
Capacitance< 12 pF

DESCRIPTION

K

TO-220AC

STTA506D

A

K

K

NC

DPAK

STTA506B

K

ISOWATT220AC

STTA506F

A

A

The TURBOSWITCH is a very high performance
series of ultra-fast high voltagepowerdiodes from
600Vto1200V.
TURBOSWITCH family, drastically cuts losses in
boththe diodeand the associatedswitching IGBT
or MOSFET in all ”freewheel mode” operations

and is particularly suitable and efficient in motor
controlfreewheelapplicationsandin boosterdiode
applicationsin power factorcontrolcircuitries.
Packaged either in TO-220AC, ISOWATT220AC
or in DPAK, these 600V devices are particularly
intendedfor useon 240V domesticmains.

ABSOLUTE RATINGS(limitingvalues)

Symbol Parameter Value Unit

V

RRM

V

RSM

I

F(RMS)

Repetitivepeakreversevoltage 600 V
Non repetitivepeak reversevoltage 600 V
RMSforwardcurrent TO-220AC

20 A

ISOWATT220AC
DPAK 10 A

I

FRM

I

FSM

T

T

stg

TM :TURBOSWITCHisa trademarkof STMicroelectronics

November 1999 - Ed: 3D

Repetitivepeakforward current tp=5µs F=5kHzsquare 65 A
Surgenon repetitiveforwardcurrent tp=10ms sinusoidal 55 A
Maximumoperatingjunctiontemperature 150 °C

j

Storagetemperature range -65to 150 °C

1/10

STTA506D/F/B

THERMAL AND POWER DATA

Symbol Parameter Test conditions Value Unit

R

th(j-c)

Junctiontocase TO-220AC/ DPAK

ISOWATT220AC

P

1

P

max

Conductionpower dissipation•
I

=5Aδ=0.5

F(AV)

Totalpowerdissipation
Pmax= P1 + P3 (P3= 10% P1)

TO-220AC/ DPAK
ISOWATT220AC

TO-220AC/ DPAK
ISOWATT220AC

Tc= 118°C
Tc=96°C

Tc= 115°C
Tc=90°C

STATICELECTRICAL CHARACTERISTICS

Symbol Parameter Test conditions Min Typ Max Unit

* Forward voltagedrop IF=5A Tj = 25°C

V

F

** Reverseleakage current VR=0.8x

I

R

V

RRM

V

to

Thresholdvoltage Ip <3.I

Tj = 125°C
Tj=25°C

Tj = 125°C 0.75
Tj = 125°C 1.15 V

AV

1.25

rd Dynamicresistance 70 m

Test pulse : *tp = 380 µs,δ <2%

** tp = 5 ms,δ<2%

3.5

6.0
9W

10 W

1.75

1.5

100

2

°C/W

V
V

µA

mA

Ω

To evaluatethe maximumconductionlossesuse thefollowingequation :
P=V

toxIF(AV)

+rdxI

F2(RMS)

DYNAMICELECTRICALCHARACTERISTICS
TURN-OFF SWITCHING

Symbol Parameter Test conditions Min Typ Max Unit

t

rr

I

RM

S factor Softnessfactor Tj = 125°CV

Reverserecovery
time

Maximumreverse
recoverycurrent

Tj = 25°C

=0.5 A IR=1A Irr = 0.25A

I

F

=1 A dIF/dt =-50A/µsVR=30V

I

F

20

50

Tj = 125°C VR= 400V IF=5A

/dt = -40 A/µs

dI

F

/dt = -500 A/µs11

dI

F

= 400V IF=5A

R

/dt= -500 A/µs 0.55

dI

F

3.0

TURN-ON SWITCHING

Symbol Parameter Testconditions Min Typ Max Unit

t

fr

Forwardrecovery
time

Tj=25°C

=5A, dIF/dt = 40 A/µs

I

F

measuredat 1.1

×

500

VFmax

ns

A

-

ns

2/10

V

Fp

Peakforward
voltage

Tj=25°C

=5A,dIF/dt = 40 A/µs10

I

F

V

STTA506D/F/B

Fig.1: SwitchingOFF lossesversusdI/dt.

P3(W)

2.50

Tj=125°C
F = 10kHz
VR=600V

2.00

1.50

1.00

0.50

0.00
0 50 100 150 200 250 300 350 400 450 500

dIF/dt(A/µs)

Fig. 3: Peak reverse recovery current versus

/dt.

dI

F

IRM(A)

25.0

22.5

20.0

17.5

90% CONFIDENCE Tj=125 C

VR=400V

IF=10A

15.0

12.5

10.0

7.5

5.0

2.5

0.0
0 100 200 300 400 500 600 700 800 900 1000

o

IF=5A

IF=2.5A

dIF/dt(A/ s)

Fig. 2: Forward voltage drop versus forward

current.

VFM(V)

3.00

2.75

MAXIMUM VALUES

2.50

2.25

2.00

1.75

o

Tj= 125 C

1.50

1.25

1.00

0.75

0.50

0.25

0.00

0.1 1 10 100

IFM(A)

Fig. 4: Reverserecovery time versusdIF/dt.

trr(ns)

180
160

90% CONFIDENCE Tj=125 C

140
120
100

80
60
40

IF=2.5A

20

0

0 100 200 300 400 500 600 700 800 900 1000

dIF/dt(A/ s)

IF=5 A

o

VR=400V

IF=1 0A

Fig.5: Softnessfactor (tb/ta) versusdIF/dt.

S factor

2.0

1.8

Typical values Tj=125 C

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0
0 100 200 300 400 500 600 700 800 9001000

dIF/dt(A/ s)

o

IF<2xIF( av)

VR=400V

Fig. 6: Relative variation of dynamic parameters

versusjunctiontemperature(referenceTj= 125°C).

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5
0 25 50 75 100 125 150

S factor

IRM

Tj(oC)

3/10