SGS Thomson Microelectronics STTA2512P, STTA5012TV2, STTA5012TV1 Datasheet
STTA2512P
TURBOSWITCH
ULTRA-FASTHIGH VOLTAGE DIODE
MAINPRODUCTCHARACTERISTICS
I
F(AV)
V
RRM
t
(typ) 60ns
rr
(max) 1.9V
V
F
25A
1200V
FEATURESAND BENEFITS
ULTRA-FAST,SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
HIGH FREQUENCY AND/OR HIGH PULSED
CURRENTOPERATION.
HIGHREVERSEVOLTAGECAPABILITY.
LOW INDUCTANCEPACKAGE< 5 nH.
INSULATEDPACKAGE: ISOTOP
Electricalinsulation : 2500V
RMS
TM
Capacitance: < 45pF.
STTA5012TV1/2
K2 A2
K1 A1
STTA5012TV1
ISOTOP
TM
A2
K2K1A1
STTA5012TV2
K
A
K
SOD93
STTA2512P
DESCRIPTION
TURBOSWITCH 1200V drastically cuts losses in
allhighvoltageoperationswhich requireextremely
fast,soft andnoise-freepower diodes.Due to their
optimizedswitchingperformancesthey also highly
decrease power losses in any associated
switchingIGBT or MOSFET in all freewheelmode
ABSOLUTE RATINGS
(limitingvalues, perdiode)
operations.
They are particularly suitable in Motor Control
circuitries, or in the primaryof SMPS assnubber,
clampingor demagnetizingdiodes. They are also
suitable for secondary of SMPS as high voltage
rectifierdiodes.
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
FRM
I
FSM
T
stg
T
j
ISOTOPand TURBOSWITCH are trademarks of STMicroelectronics.
November 1999 - Ed: 4B
Repetitivepeak reverse voltage 1200 V
RMSforwardcurrent 50 A
Repetitivepeak forward current tp= 5 µsF = 5kHz square 300 A
Surgenon repetitiveforwardcurrent tp= 10ms sinusoidal 210 A
Storagetemperaturerange - 65 to+ 150 °C
Maximumoperatingjunction temperature 150 °C
1/9
STTA2512P / STTA5012TV1/2
THERMAL ANDPOWER DATA (perdiode)
Symbol Parameter Conditions Value Unit
R
th(j-c)
R
th(c)
P
1
P
max
STATICELECTRICAL CHARACTERISTICS (perdiode)
Symbol Parameter Test conditions Min Typ Max Unit
V
F
I
R
V
to
R
d
Test pulses : * tp = 380 µs, δ<2%
Junctionto casethermal
resistance
ISOTOP Perdiode 1.4 °C/W
ISOTOP Total 0.75
SOD93 1.2
Couplingthermalresistance ISOTOP Coupling 0.1 °C/W
Conductionpowerdissipation
I
=25Aδ=0.5
F(AV)
Totalpower dissipation
Pmax= P1 + P3 (P3 = 10% P1)
ISOTOP Tc=70°C57W
SOD93 Tc=82°C
ISOTOP Tc=62°C 62.5 W
SOD93 Tc=75°C
* Forward voltagedrop IF=25A Tj = 25°C
Tj = 125°C 1.3
** Reverseleakage current VR=0.8x
V
RRM
Thresholdvoltage Ip < 3.I
F(AV)
Tj = 25°C
Tj = 125°C 2.0
Tj = 125°C 1.52 V
Dynamicresistance 15 mΩ
δ
** tp = 5 ms ,
<2%
2.1
1.9
150
8
V
V
A
µ
mA
To evaluatethe maximumconductionlossesuse the following equation:
P=V
toxIF(AV)
+RdxI
F2(RMS)
DYNAMICELECTRICALCHARACTERISTICS(perdiode)
TURN-OFF SWITCHING
Symbol Parameter Testconditions Min Typ Max Unit
t
rr
Reverserecovery
time
I
RM
Maximumreverse
recoverycurrent
S factor Softnessfactor Tj= 125°CV
Tj= 25°C
= 0.5A IR=1A Irr= 0.25A
I
F
I
=1A dIF/dt =-50A/µsVR=30V
F
60
110
Tj= 125°C VR= 600V IF=25A
dI
/dt =-200 A/µs
F
/dt =-500 A/µs45
dI
F
= 600V IF=25A
R
dI
/dt =-500 A/µs 1.2
F
35
TURN-ON SWITCHING
Symbol Parameter Testconditions Min Typ Max Unit
t
fr
V
Fp
Forwardrecoverytime Tj = 25°C
=25A, dIF/dt =200 A/µs
I
F
measuredat 1.1×V
Peakforwardvoltage Tj = 25°C
=25A,dIF/dt = 200A/µs
I
F
I
=40A,dIF/dt = 500A/µs
F
max
F
900
30
35
ns
A
/
ns
V
2/9
STTA2512P / STTA5012TV1/2
Fig. 1: Conductionlossesversusaveragecurrent
(perdiode).
P1(W)
60
δ = 0.1
δ = 0.2
δ= 0.5
50
40
δ =1
30
20
10
IF(av) (A)
0
0 5 10 15 20 25 30
T
=tp/T tp
δ
Fig.3-1:Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
(ISOTOP).
Zth(j-c)/Rth(j-c)
1.0
Fig. 2: Forward voltage drop versus forward
current (maximumvalues, per diode).
IFM(A)
300
Tj=125°C
100
10
VFM(V)
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Fig. 3-2: Relative variation of thermal impedance
junctionto caseversus pulseduration(SOD93).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6
δ = 0.5
0.4
δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-3 1E-2 1E-1 1E+0 5E+0
tp(s)
Fig.4: Peakreverserecoverycurrent versusdIF/dt
(90%confidence,per diode).
IRM(A)
55
VR=600V
50
Tj=125°C
45
40
IF=2*IF(av)
35
30
25
20
15
10
5
0
0 100 200 300 400 500
dIF/dt(A/µs)
IF=IF(av)
IF=0.5*IF(av)
0.8
0.6
δ = 0.5
0.4
δ = 0.2
δ = 0.1
0.2
0.0
1E-4 1E-3 1E-2 1E-1 1E+0
Single pulse
tp(s)
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence,perdiode).
trr(ns)
500
450
400
350
300
250
200
150
100
50
0
0 100 200 300 400 500
IF=2*IF(av)
IF=IF(av)
IF=0.5*IF(av)
dIF/dt(A/µs)
VR=600V
Tj=125°C
3/9
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