SGS Thomson Microelectronics STTA312B Datasheet



TURBOSWITCHTMULTRA-FASTHIGH VOLTAGE DIODE

MAINPRODUCTCHARACTERISTICS

STTA312B

I

F(AV)

V

RRM

t

(typ) 65 ns

rr

(max) 1.7 V

V

F

3A

1200 V

FEATURESAND BENEFITS

SPECIFICTOTHEFOLLOWINGOPERATIONS:
SNUBBING OR CLAMPING, DEMAGNETIZA­TIONANDRECTIFICATION

ULTRA-FAST,SOFTRECOVERY
VERY LOW OVERALL POWER LOSSES AND

PARTICULARYLOWFORWARDVOLTAGE
HIGHFREQUENCYOPERATION
HIGHREVERSEVOLTAGECAPABILITY

DESCRIPTION

TURBOSWITCH 1200V drastically cuts losses in
allhigh voltageoperationswhichrequire extremely
fast,soft and noise-freepower diodes.

Due to their optimized switching performances
they also highly decrease power losses in any
associated switching IGBT or MOSFET in all
”freewheelmode” operations.

K

A

NC

DPAK

They are particularly suitable in motor control
circuitries, or in primary of SMPS as snubber,
clampingor demagnetizingdiodes. They are also
suitableforthesecondaryofSMPSashighvoltage
rectifierdiodes.

ABSOLUTERATINGS

(limiting values)

Symbol Parameter Value Unit

V

RRM

V

RSM

I

F(RMS)

I

FRM

I

FSM

T

stg

T

j

TURBOSWITCHisa trademark of STMicroelectronics

November 1999 - Ed:4A

Repetitivepeakreversevoltage 1200 V
Nonrepetitivepeakreverse voltage 1200 V
RMSforward current 6 A
Repetitivepeakforwardcurrent tp = 5µs F =5kHzsquare 35 A
Surgenon repetitiveforwardcurrent tp = 10ms sinusoidal 25 A
Storagetemperaturerange - 65 to+150 °C
Maximumoperatingjunction temperature 125 °C

1/8

STTA312B

THERMAL AND POWERDATA

Symbol Parameter Testsconditions Value Unit

R

th (j-c)

P

1

Junctiontocasethermalresistance 6.5 °C/W
Conductionpower dissipation I

= 3A,δ=0.5

F(AV)

6.7 W

Tc=80°C

P

max

Totalpowerdissipation
P

max=P1+P3

Tc=76°C 7.5 W

(P3=10%P1)

STATICELECTRICALCHARACTERISTICS

Symbol Parameter Testsconditions Min. Typ. Max. Unit

** Forwardvoltagedrop IF=3A Tj=25°C 1.8 V

V

F

I

= 3 A Tj= 125°C 1.15 1.7

F

* Reverseleakage current VR=0.8

I

R

XV

RRM

Vto Thresholdvoltage Ip < 3.I

Tj=25°C20µA
Tj=125°C 150 400
Tj=125°C 1.15 V

AV

rd Dynamicresistance 185 mΩ

Test pulses : * tp= 380 µs, δ <2%

** tp= 5 ms , δ <2%

To evaluatethe maximumconduction lossesuse thefollowingequation:
P=V

toxIF(AV)

+rdxI

F2(RMS)

µ

A

DYNAMICELECTRICALCHARACTERISTICS
TURN-OFF SWITCHING

Symbol Parameter Testconditions Min. Typ. Max. Unit

t

rr

I

RM

Maximum
recoverycurrent

Sfactor Softnessfactor Tj = 125°CV

Tj=25°CIF= 0.5A IR=1A Irr= 0.25A

I

=1A dIF/dt=50A/µs

F

V

R

Tj = 125°CIF=3A VR= 600V

dI

F

dI

F

R

dI

F

=30V

/dt = -16A/µs
/dt = -50A/µs 6.0

=600V IF=3A

/dt = -50A/µs

65

115

3.6

1.2 -

TURN-ON SWITCHING

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

fr

Forwardrecovery
time

V

FP

Peakforward voltage 35 V

Tj=25°C

=3A dIF/dt = 16A/µs

I

F

Measuredat 1.1x V

900 ns

Fmax

ns

A

2/8

STTA312B

Fig.1:

Conductionlossesversusaveragecurrent.

P1(W)

8
7

δ = 0.1

δ = 0.2

δ= 0.5

6
5
4

δ =1

3
2
1
0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Fig. 3:

Relative variation of thermal impedance

IF(av) (A)

junctionto case versuspulse duration.

Zth(j-c)/Rth(j-c)

1.0

0.8

δ = 0.5

0.6

δ = 0.2

0.4

δ = 0.1

0.2

Single pulse

tp(s)

0.0
1E-3 1E-2 1E-1 1E+0

δ

=tp/T

T

tp

Fig. 2:

Forward voltage drop versus forward cur-

rent(maximumvalues).

IFM(A)

3E+1
1E+1

1E+0

1E-1

Tj=125°C

Tj=25°C

VFM(V)

1E-2

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Fig.4:

PeakreverserecoverycurrentversusdI

(90%confidence).

IRM(A)

14

VR=600V

12

Tj=125°C

10

8
6
4
2
0

0 102030405060708090100

dIF/dt(A/µs)

IF=2*IF(av)

IF=IF(av)

/dt

F

Fig. 5:

Reverse recovery time versus dI

/dt (90%

F

confidence).

trr(ns)

600

VR=600V

500

400

IF=2*IF(av)

300

200

100

0 102030405060708090100

IF=IF(av)

dIF/dt(A/µs)

Tj=125°C

Fig. 6:

Softness factor tb/ta versus dI

/dt (typical

F

values).

S factor

1.6

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5
0 102030405060708090100

dIF/dt(A/µs)

IF<2*IF(av)
VR=600V
Tj=125°C

3/8