SGS Thomson Microelectronics STTA306B Datasheet
®
TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTI CS
STTA306B
I
F(AV)
V
RRM
(typ) 20 ns
t
rr
(max) 1.65 V
V
F
3 A
600 V
FEATURES AND BENEFITS
SPECIFIC TO FREEWHEEL MODE OPERATIONS:
FREEWHEEL OR BO OSTER DIODE.
ULTRA-FAST, AND SOF T RECOVERY.
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
HIGH FREQ UENC Y O PERA TIO NS.
DESCRIPTION
The TURBOSWITCH is a very high performance
series of ultra-fast high voltage power diodes.
TURBOSWITCH family drastically cuts losses in
both the diode and the associated switching IGBT
or MOSFET in all freewheel mode operations and
is particulary suitable and efficient in motor control
K
A
NC
DPAK
freewheel applications and in booster diode applications in Power Factor Control circuitries.
Packaged in DPAK, these 600V devices are particularly intended for use on 240V domestic mains.
ABSOLUTE RATINGS
(limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
FRM
I
FSM
Repetitive peak reverse voltage 600 V
RMS forward current 6 A
Repetitive peak forward current tp=5 µs F=5 kHz s quare 20 A
Surge non repetitive forward current tp=10 ms sinusoidal 35 A
Tj Maximum operating junction temper ature 125 °C
T
stg
TM : TURBOSWITCH is a trademark from STMicroelectronics
November 1999 - Ed: 3C
Storage temperature range - 65 to + 150
°
C
1/8
STTA306B
THERMAL AND POWER DATA
Symbol Parameter Tests conditions Value Unit
R
P
th (j-c)
P
max
Junction to case 6
Conduction power dissipation I
1
Total power dissipation
P
= P1 + P3 (P3 = 10% P1)
max
= 1.5A, δ = 0.5
F(AV)
T
= 110°C
c
= 108°C 2.8 W
T
c
2.5 W
STATIC ELECTRICAL CHARACTE RISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
V
** Forward voltage drop Tj = 25°CIF = 3 A 1.85 V
F
I
* Reverse leakage
R
current
V
Threshold voltage Ip < 3.I
to
Tj = 125°CI
Tj = 25°CV
Tj = 125°C 500 1200
F(AV)
= 3 A 1.3 1.65
F
= 0.8 X V
R
RRM
20
Tj = 125°C 1.15 V
Rd Dynamic resistance 175 m
Test pulse : * tp = 380 µs, δ < 2%
** tp = 5 ms, δ < 2%
°
C/W
µ
A
Ω
To evaluate the maximum conduction losses use the following equation :
P = V
x I
to
F(AV)
+ Rd x I
F2(RMS)
DYNAMIC ELECTRICAL CHARACTE RISTICS
TURN-OFF SWITCHING
Symbol P arameter Test conditions Min. Typ. M ax. Unit
t
I
rr
RM
Maximu m reve rse
Tj = 25° C IF=0.5A IR=1A Irr=0.25A
Tj = 125°C IF=3A VR=400V
recover y curre nt
S factor Softness factor Tj = 125°C V
I
=1A dIF/dt= -50A/µs
F
V
=30V
R
dI
/dt = -16A/µs
F
dI
/dt = -50A/µs2.0
F
=400V IF=3A
R
dI
/dt = -50A/µs
F
20
50
1.2
1.1 -
TURN-ON SWITCHING
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
fr
Forward recovery
Tj = 25°C I
time
=3A dIF/dt = 16A/µs
F
Measured at 1.1 x V
Fmax
500 ns
ns
A
2/8
V
FP
Peak forward
Tj = 25°C IF=2A dIF/dt = 16A/µs10V
voltage
STTA306B
Fig. 1:
Conduction losses vers us average c urrent.
P1(W)
3.0
δ = 0.2
2.5
2.0
δ = 0.05
δ = 0.1
δ = 0.5
δ = 1
1.5
1.0
0.5
IF(av) (A)
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Fig. 3:
Relative variation of thermal transient
impedance junction to ambient versus pulse
duration (recommended pad layout).
Zth(j-a) (°C/W)
1E+0
δ = 0.5
δ = 0.2
1E-1
δ = 0.1
1E-2
1E-3
Single pulse
tp(s)
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
δ
=tp/T
T
tp
Fig. 2:
Forward voltage drop versus forward
current (maximum values).
IFM(A)
5E+1
1E+1
Tj=125°C
1E+0
1E-1
1E-2
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Fig. 4:
Peak rever se recove ry curr ent vers us dI
Tj=25°C
VFM(V)
(90% confidence).
IRM(A)
9
VR=400V
8
Tj=125°C
7
6
5
4
3
2
1
0
0 20 40 60 80 100 120 140 160 180 200
IF=2*IF(av)
IF=IF(av)
dIF/dt(A/µs)
/dt
F
Fig. 5:
Reverse recovery time versus dI
/dt (90%
F
confidence).
trr(ns)
350
300
250
200
150
IF=2*IF(av)
100
50
0
dIF/dt(A/µs)
0 20 40 60 80 100 120 140 160 180 200
IF=IF(av)
VR=400V
Tj=125°C
Fig. 6:
Softn ess factor (tb/ta) versu s dI
/dt (typical
F
values).
S factor
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0 20 40 60 80 100 120 140 160 180 200
dIF/dt(A/µs)
IF<2*IF(av)
VR=400V
Tj=125°C
3/8
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