SGS Thomson Microelectronics STTA212S Datasheet
STTA212S
TURBOSWITCH
ULTRA-FASTHIGH VOLTAGE DIODE
MAINPRODUCTCHARACTERISTICS
I
F(AV)
V
RRM
t
(typ) 65ns
rr
(max) 1.5V
V
F
2A
1200V
FEATURESAND BENEFITS
SPECIFIC TO THE FO L LOW ING OPERAT IO N S:
SNUBBING OR CLAMPING, DEMAGHETIZATION
ANDRECTI FICATIO N
ULTRA-FASTANDSOFTRECOVERY
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR
HIGHFREQUENCY OPERATION
HIGHREVERSEVOLTAGECAPABILITY
DESCRIPTION
SMC
TURBOSWITCH 1200V drastically cuts losses in
all highvoltageoperationswhichrequireextremely
fast, soft and noise-freepower diodes.
Due to their optimized switching performances
they aloso highly decrease power losses in any
associated switching IGBT or MOSFET in all
suitableand efficient in motorcontrol circuitries, or
in primary of SMPS as snubber, clamping or
demagnetizingdiodes secondaryof SMPSas high
voltage rectifier diodes.They are also suitable for
the secondary of SMPS as high voltage rectifier
diodes.
”freewheel mode” operations and is particulary
ABSOLUTE RATINGS
(limitingvalues)
Symbol Parameter Value Unit
V
RRM
V
RSM
I
F(RMS)
I
FRM
I
FSM
T
stg
T
j
TURBOSWITCH is a trademark of STMicroelectronics
November 1999 - Ed:4A
Repetitivepeakreversevoltage 1200 V
Nonrepetitivepeak reversevoltage 1200 V
RMSforwardcurrent 10 A
Repetitivepeakforwardcurrent tp = 5µsF=5kHzsquare 20 A
Surgenon repetitiveforwardcurrent tp = 10mssinusoidal 25 A
Storagetemperaturerange - 65 to + 150 °C
Maximumoperatingjunction temperature 125 °C
1/8
STTA212S
THERMAL ANDPOWERDATA
Symbol Parameter Test conditions Value Unit
R
th(j-I)
P
1
Junctionto leadthermalresistance 21 °C/W
Conductionpowerdissipation I
= 1.5A δ = 0.5
F(AV)
2.5 W
Tlead=72°C
P
max
Totalpower dissipation
Tlead=67°C 2.8 W
Pmax= P1+ P3 (P3= 10% P1)
STATICELECTRICAL CHARACTERISTICS
Symbol Parameter Test Conditions Min Typ Max Unit
V
F*
I
R**
Forwardvoltagedrop IF=2A Tj=25°C
Reverseleakagecurrent VR=0.8
xV
RRM
Vto Thresholdvoltage Ip< 3.I
Tj =125°C 1.1
Tj =25°C
Tj =125°C 15020400
Tj =125°C 1.15 V
AV
1.65
1.5
rd Dynamicresistance 175 mΩ
Test pulses : * tp = 380µs,
** tp= 5 ms ,δ<2%
δ
<2%
Toevaluate the maximum conductionlossesuse the following equation :
P=V
toxIF(AV)
+rdxI
F2(RMS)
V
A
µ
DYNAMICELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
Symbol Parameter Testconditions Min Typ Max Unit
t
rr
I
RM
S factor Softnessfactor Tj = 125°CV
Reverserecovery
time
Maximumrecovery
current
Tj = 25°C
=0.5 A IR= 1A Irr= 0.25A
I
F
I
=1A dIF/dt=-50A/µsVR= 30V
F
65
115
Tj = 125°CVR= 600V IF=2A
/dt= -16 A/µs
dI
F
/dt= -50 A/µs 6.0
dI
F
=600V IF=2A
R
dI
/dt= -50 A/µs 0.9 /
F
3.6
TURN-ON SWITCHING
Symbol Parameter Testconditions Min Typ Max Unit
t
fr
V
Fp
Forwardrecoverytime Tj=25°C
=2A
I
Peakforwardvoltage 35 V
F
dI
/dt = 16 A/µs
F
measuredat1.1×V
max
F
900 ns
ns
A
2/8
STTA212S
Fig.1: Conductionlosses versusaveragecurrent.
P1(W)
3.0
δ=0.1
δ=0.2
δ=0.5
δ=1
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
IF(av) (A)
Fig. 3: Variationof thermal impedance junctionto
ambient versus pulse duration (epoxy printed circuitboardFR4, e(Cu)=35µm,S(Cu)=1cm2).
Zth(j-a)(°C/W)
100
Fig. 2: Forward voltage drop versus forward
current (maximum values).
IFM(A)
5E+1
1E+1
Tj=125°C
1E+0
1E-1
VFM(V)
1E-2
012345
Fig.4: Peakreverserecoverycurrent versusdIF/dt
(90%confidence).
IRM(A)
20
VR=600V
Tj=125°C
15
IF=2*IF(av)
10
tp(s)
1
1E-2 5E+2
1E-1 1E+0 1E+1 1E+2
Fig. 5: Softnessfactor (tb/ta)versusdIF/dt (typical
values).
S factor
1.20
IF<2*IF(av)
1.00
0.80
0.60
0 20 40 60 80 100 120 140 160 180 200
VR=600V
Tj=125°C
dIF/dt(A/µs)
10
5
0
0 20 40 60 80 100 120 140 160 180 200
dIF/dt(A/µs)
IF=IF(av)
Fig. 6: Reverse recoverytime versus dIF/dt (90%
confidence).
trr(ns)
400
350
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160 180 200
IF=2*IF(av)
IF=IF(av)
dIF/dt(A/µs)
VR=600V
Tj=125°C
3/8
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