SGS Thomson Microelectronics STTA2006PI, STTA2006P Datasheet
STTA2006P/PI
TURBOSWITCH
ULTRA-FASTHIGH VOLTAGE DIODE
MAINPRODUCTCHARACTERISTICS
I
F(AV)
V
RRM
(typ) 30ns
t
rr
(max) 1.5V
V
F
20A
600V
FEATURESAND BENEFITS
SPECIFICTO”FREEWHEEL MODE” OPERATIONS:FREEWHEELORBOOSTERDIODE.
ULTRA-FASTAND SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
HIGHFREQUENCY OPERATIONS.
INSULATEDPACKAGE: DOP3I
Electricalinsulation: 2500V
RMS
Capacitance< 12 pF
K
STTA2006P
SOD93
A
K
A
K
Isolated
DOP3I
STTA2006PI
DESCRIPTION
The TURBOSWITCH is a very high performance
series of ultra-fast high voltagepowerdiodes from
600Vto1200V.
TURBOSWITCH family, drastically cuts losses in
boththe diodeand the associatedswitching IGBT
or MOSFET in all ”freewheel mode” operations
ABSOLUTE RATINGS
(limitingvalues)
and is particularly suitable and efficient in Motor
controlfreewheelapplicationsandinboosterdiode
applicationsin power factor controlcircuitries.
Packaged either in SOD93 or in DOP3I, these
600V devices are particularly intended for use on
240Vdomesticmains.
Symbol Parameter Value Unit
V
RRM
V
RSM
I
F(RMS)
I
FRM
I
FSM
T
T
stg
TM :TURBOSWITCH is atrademarkof STMicroelectronics
November 1999 - Ed: 3D
Repetitivepeak reversevoltage 600 V
Non repetitivepeakreverse voltage 600 V
RMSforwardcurrent 50 A
Repetitivepeak forwardcurrent tp= 5µs F= 5kHzsquare 270 A
Surgenon repetitiveforward current tp=10ms sinusoidal 180 A
Maximumoperating junction temperature 150 °C
j
Storagetemperaturerange -65to 150 °C
1/8
STTA2006P/PI
THERMAL AND POWER DATA
Symbol Parameter Testconditions Value Unit
R
P
th(j-c)
P
1
max
Junctionto casethermal
resistance
Conductionpower dissipation
I
=20Aδ=0.5
F(AV)
Totalpowerdissipation
Pmax= P1 + P3 (P3=10% P1)
SOD93
DOP3I
SOD93
DOP3I
SOD93
DOP3I
Tc= 96°C
Tc=74°C
Tc= 90°C
Tc=66°C
1.5
2.1
36 W
40 W
STATICELECTRICAL CHARACTERISTICS
Symbol Parameter Testconditions Min Typ Max Unit
V
F*
I
R**
V
to
Forwardvoltagedrop IF=20A Tj = 25°C
Tj = 125°C 1.25
Reverseleakage current VR=0.8x
V
RRM
Thresholdvoltage Ip< 3.I
Tj=25°C
Tj = 125°C 2.5
Tj = 125°C 1.15 V
AV
1.75
1.5
100
6
rd Dynamicresistance 17 m
Test pulse: *tp = 380µs, δ <2%
** tp= 5 ms,
δ
<2%
To evaluatethe maximumconductionlossesuse the followingequation:
P=V
toxIF(AV)
+rdxI
F2(RMS)
°C/W
V
V
µA
mA
Ω
DYNAMICELECTRICALCHARACTERISTICS
TURN-OFF SWITCHING
Symbol Parameter Testconditions Min Typ Max Unit
t
rr
I
RM
S factor Softnessfactor Tj = 125°CV
Reverserecovery
time
Maximumreverse
recoverycurrent
Tj = 25°C
=0.5A IR= 1A Irr = 0.25A
I
F
=1A dIF/dt=-50A/µsVR=30V
I
F
Tj = 125°C VR = 400V IF=20A
dI
/dt= -160A/µs
F
dI
/dt= -500A/µs
F
=400V IF=20A
R
/dt= -500 A/µs 0.42
dI
F
30
60
12.5
17.5
TURN-ON SWITCHING
Symbol Parameter Test conditions Min Typ Max Unit
t
fr
Forwardrecovery
time
V
Fp
Peakforwardvoltage Tj = 25°C
Tj = 25°C
I
=20A,dIF/dt = 160 A/µs
F
measuredat, 1.1
=20A,dIF/dt = 160 A/µs12
I
F
VFmax
×
600
ns
A
/
ns
V
2/8
STTA2006P/PI
Fig.1: Conductionlosses versusaveragecurrent.
P1(W)
50
40
30
20
10
0
02468101214161820
=tp/T
T
=0.1
tp
IF(av)(A)
=0.2
=1
=0.5
Fig. 3: Relative variation of thermal transient
impedancejunction to case versuspulseduration.
Fig. 2: Forward voltage drop versus forward
current.
VFM(V)
3.50
MAXIMUM VALUES
3.00
2.50
o
Tj=125 C
2.00
1.50
1.00
0.50
0.00
0.1 1 10 100
IFM(A)
200
Fig. 4: Peak reverse recovery current versus
/dt.
dI
F
IRM(A)
40.0
90% CONFIDENCE Tj=125 C
37.5
35.0
VR=400V
32.5
30.0
27.5
25.0
22.5
20.0
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0.0
0 100 200 300 400 500 600 700 800 9001000
o
IF= 40A
IF= 20A
IF=10A
dIF/dt(A/ s)
Fig.5: Reverserecoverytime versusdIF/dt.
trr(ns)
250
225
200
175
150
125
100
75
50
IF=10A
25
0
0 100 200 300 400 500 600 700 800 9001000
90% CONFIDENCE Tj=125 C
VR=400V
IF=40A
IF= 20A
dIF/dt(A/ s)
Fig. 6: Softnessfactor(tb/ta) versusdIF/dt.
S factor
o
1.2
1.1
Typical values Tj=125 C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 100 200 300 400 500 600 700 800 900 1000
dIF/dt(A/ s)
o
IF<2xIF(av)
VR=400V
3/8
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