SGS Thomson Microelectronics STTA1206DI, STTA1206G, STTA1206D Datasheet

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STTA1206D/DI/G

TURBOSWITCH

ULTRA-FASTHIGH VOLTAGE DIODE



MAINPRODUCT CHARACTERISTICS

I

F(AV)

V

RRM

t

(typ) 28ns

rr

(max) 1.5V

V

F

12A

600V

FEATURESAND BENEFITS

SPECIFIC TO ”FREEWHEEL MODE”
OPERATIONS: FREEWHEEL OR BOOSTER
DIODE.

ULTRA-FASTANDSOFTRECOVERY.
VERY LOW OVERALL POWER LOSSES IN

BOTH THE DIODE AND THE COMPANION
TRANSISTOR.

HIGHFREQUENCY OPERATIONS.
INSULATEDPACKAGE: TO-220AC

Electricalinsulation: 2500V

RMS

Capacitance< 7 pF

K

TO-220AC

STTA1206D

K

NC

D2PAK

STTA1206G

A

K

A

A

K

Insulated

TO-220AC

STTA1206DI

DESCRIPTION

TURBOSWITCH, family, drastically cuts losses in
boththe diodeand the associatedswitching IGBT
or MOSFET in all ”freewheel mode” operations

Packaged in TO-220AC, isolated TO-220AC and

2

PAK, these 600V devices are particularly

D

intendedfor use on 240V domesticmains.
and is particularly suitable and efficient in motor
controlfreewheelapplicationsandinboosterdiode
applicationsin powerfactorcontrol circuitries.

ABSOLUTE RATINGS

(limitingvalues)

Symbol Parameter Value Unit

V

RRM

V

RSM

I

F(RMS)

Repetitivepeak reversevoltage 600 V
Non repetitivepeak reversevoltage 600 V
RMSforward current TO-220AC/ D2PAK 30 A

TO-220ACins. 20 A

I

FRM

Repetitivepeak
forwardcurrent

I

FSM

T

T

stg

TM : TURBOSWITCH is a trademarkof STMicroelectronics

Surgenon repetitiveforwardcurrent tp=10 mssinusoidal 110 A
Maximumoperatingjunction temperature 150 °C

j

Storagetemperaturerange -65to150 °C

TO-220AC/D2PAK tp=5µs F=5kHz
TO-220ACins. 120 A

square

160 A

November 1999 - Ed: 4B

1/9

STTA1206D/DI/G

THERMAL AND POWER DATA

Symbol Parameter Test conditions Value Unit

R

th(j-c)

Junctionto case thermal
resistance

Conductionpowerdissipation
I

=12Aδ=0.5

F(AV)

Totalpower dissipation

P

P

max

1

Pmax= P1+ P3
(P3= 10%P1)

STATICELECTRICALCHARACTERISTICS

Symbol Parameter Test conditions Min Typ Max Unit

V

F*

I

R**

V

to

Forwardvoltagedrop IF=12A Tj = 25°C

Reverseleakage current VR=0.8x

Thresholdvoltage Ip < 3.I

rd Dynamicresistance 29 m

Test pulse: * tp = 380 µs,δ cycle < 2%

** tp = 5 ms,δcycle < 2%

TO-220AC/ D2PAK
TO-220ACins.

TO-220AC/ D

2

TO-220ACins.
TO-220AC/D2PAK

TO-220ACins.

Tj = 125°C 1.25
Tj = 25°C

V

RRM

Tj = 125°C2
Tj = 125°C 1.15 V

AV

PAK

Tc= 108°C
Tc=84°C

Tc= 104°C
Tc=78°C

1.9

3.0
22 W

24 W

1.75

1.5

100

5

°C/W

V
V

µA

mA

Ω

To evaluatethe maximumconductionlossesuse thefollowing equation :
P=V

toxIF(AV)

+rdxI

F2(RMS)

DYNAMICELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING

Symbol Parameter Test conditions Min Typ Max Unit

t

rr

Reverserecovery
time

I

RM

Maximumreverse
recoverycurrent

S factor Softnessfactor Tj= 125°CV

Tj= 25°C
I

= 0.5A IR=1A Irr= 0.25A

F

=1A dIF/dt =-50A/µsVR=30V

I

F

28

55

Tj= 125°C VR= 400V IF=12A

/dt = -96 A/µs

dI

F

dI

/dt = -500 A/µs16

F

= 400V IF=12A

R

/dt = -500 A/µs 0.45

dI

F

7.5

TURN-ON SWITCHING

Symbol Parameter Testconditions Min Typ Max Unit

t

fr

Forwardrecovery
time

V

Fp

Peakforwardvoltage Tj = 25°C

Tj=25°C

=12A, dIF/dt = 96 A/µs

I

F

measuredat, 1.1

=12A,dIF/dt= 96 A/µs10

I

F

VFmax

×

500

ns

A

-

ns

V

2/9

STTA1206D/DI/G

Fig.1: Conductionlossesversus average current.

P1(W)

25

20

15

10

5

0

0123456789101112

δ = 0.1

IF(av)(A)

δ = 0.2

δ

=tp/T

δ= 0.5

δ =1

T

tp

Fig. 3: Relative variation of thermal transient
impedancejunction to caseversus pulseduration.

K

1

Zth(j-c) (tp. )

Rth(j-c)

δ

Single pulse

tp(s)

δ

=tp/T

T

tp

K=

0.8

0.6

δ = 0.5

0.4

δ = 0.2

δ = 0.1

0.2

0

1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00

Fig. 2: Forward voltage drop versus forward
current.

VFM(V)

3.00

2.75

2.50

2.25

2.00

1.75

1.50

1.25

1.00

0.75

0.50

0.25

0.00

0.1 1 10 100 200

MAXIMUMVALUES

Tj=125°C

IFM(A)

Fig. 4: Peak reverse recovery current versus

/dt.

dI

F

IRM(A)

40.0

37.5

35.0

32.5

30.0

27.5

25.0

22.5

20.0

17.5

15.0

12.5

10.0

7.5

5.0

2.5

0.0

90% CONFIDENCE Tj=12° C

VR=400V

IF=24A

IF=12A

IF=6A

dIF/dt(A/µs)

0 100 200 300 400 500 600 700 800 900 1000

Fig.5: Reverserecoverytime versusdIF/dt.

trr(ns)

220
200
180
160
140
120

IF=24A

100

80
60
40

IF=6A

20

0

0 100 200 300 400 500 600 700 800 900 1000

90% CONFIDEN CE Tj=125°C

VR=400V

IF=12A

dIF/dt(A/µs)

Fig. 6: Softnessfactor (tb/ta)versus dIF/dt.

S factor

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0
0 100 200 300 400 500 600 700 800 900 1000

Typicalvalues Tj=125°C

IF<2xIF(av)

VR=400V

dIF/dt(A/µs)

3/9