SGS Thomson Microelectronics STTA112U Datasheet
STTA112U
TURBOSWITCH
ULTRA-FASTHIGH VOLTAGE DIODE
MAINPRODUCTCHARACTERISTICS
I
F(AV)
V
RRM
(typ) 65ns
t
rr
(max) 1.5V
V
F
1A
1200V
FEATURESAND BENEFITS
SPECIFIC TO THE FOLLOWIN G OPER ATI ONS:
SNU B BINGOR C LA MPIN G ,DEMAGN ETIZA T I ON
ANDREC TI FICA T I ON
ULTRA-FASTAND SOFTRECOVERY
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR
HIGHFREQUENCYOPERATION
HIGHREVERSEVOLTAGECAPABILITY
DESCRIPTION
SMB
TURBOSWITCH 1200V drastically cuts losses in
allhighvoltageoperationswhich requireextremely
fast,softand noise-freepower diodes.
Due to their optimized switching performances
they also highly decrease power losses in any
They are particularly suitable in motor control
circuitries, or in primary of SMPS as snubber,
clampingor demagnetizingdiodes. They are also
suitableforthe secondaryof SMPSas highvoltage
rectifierdiodes.
associated switching IGBT or MOSFET in all
freewheelmode operations.
ABSOLUTE RATINGS
(limitingvalues)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
FRM
I
FSM
T
stg
T
j
TURBOSWITCH is a trademark of STMicroelectronics
November 1999 -Ed: 5A
Repetitivepeakreversevoltage 1200 V
RMSforwardcurrent 6 A
Repetitivepeakforward current tp= 5 µsF = 5kHz square 10 A
Surgenon repetitive forward current tp= 10ms sinusoidal 20 A
Storagetemperature range - 65 to+ 150 °C
Maximumoperatingjunction temperature 125 °C
1/8
STTA112U
THERMAL AND POWER DATA
Symbol Parameter Test conditions Value Unit
R
th(j-I)
P
1
Junctionto leadthermalresistance 23 °C/W
Conductionpower dissipation I
= 0.8Aδ= 0.5
F(AV)
1.4 W
Tlead=93°C
P
max
Totalpower dissipation
Tlead=90°C 1.5 W
Pmax= P1 + P3 (P3= 10% P1)
STATICELECTRICALCHARACTERISTICS
Symbol Parameter Testconditions Min Typ Max Unit
V
F*
I
R**
V
to
Forwardvoltage drop IF=1A Tj=25°C
Tj= 125°C 1.1
Reverseleakagecurrent VR= 0.8 x
V
RRM
Thresholdvoltage Ip< 3.I
F(AV)
Tj= 25°C
Tj= 125°C90
Tj= 125°C 1.15 V
1.65
1.5
10
300
Rd Dynamicresistance 350 m
Test pulses : * tp = 380 µs, δ <2%
** tp =5 ms ,δ <2%
To evaluatethe maximumconductionlossesusethe followingequation:
P=V
toxIF(AV)
+RdxI
F2(RMS)
V
µA
Ω
DYNAMICELECTRICALCHARACTERISTICS
TURN-OFF SWITCHING
Symbol Parameter Testconditions Min Typ Max Unit
t
rr
I
RM
S factor Softnessfactor Tj= 125°CV
Reverserecovery
time
Maximumrecovery
current
Tj = 25°C
=0.5 A IR= 1A Irr =0.25A
I
F
=1A dIF/dt=-50A/µsVR= 30V
I
F
65
115
Tj = 125°CVR= 600V IF=1A
dI
/dt= -8 A/µs
F
/dt= -50 A/µs5
dI
F
=600V IF=1A
R
/dt= -50 A/µs 0.7
dI
F
1.8
TURN-ON SWITCHING
Symbol Parameter Testconditions Min Typ Max Unit
t
fr
V
Fp
Forwardrecoverytime Tj = 25°C
= 1 A, dIF/dt = 8 A/µs
I
Peakforwardvoltage 35 V
F
measuredat 1.1
VFmax
×
900 ns
ns
A
-
2/8
STTA112U
Fig.1: Conduction losses versus average current.
P1(W)
1.50
δ = 0.1
δ= 0.5δ = 0.2
1.25
1.00
δ =1
0.75
0.50
0.25
0.00
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
IF(av) (A)
Fig. 3: Relative variation of thermal transient im-
pedancejunctionto leadversuspulse duration.
Fig. 2: Forward voltage drop versus forward current(Maximumvalues).
IFM(A)
50.0
Tj=125°C
10.0
1.0
VFM(V)
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig.4: Peakreverse recoverycurrentversusdIF/dt
(90%confidence).
IRM(A)
15.0
I
12.5
F=2*IF(av)
10.0
7.5
5.0
2.5
0.0
0 20 40 60 80 100 120 140 160 180 200
dIF/dt(A/µs)
VR=600V
Tj=125°C
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence).
trr(ns)
300
250
IF=2*IF(av)
200
150
100
50
0
0 20 40 60 80 100 120 140 160 180 200
dIF/dt(A/µs)
VR=600V
Tj=125°C
Fig.6: Softnessfactor (tb/ta)versusdIF/dt(Typical
values).
S factor
1.00
IF<2*IF(av)
0.80
0.60
0.40
0 20 40 60 80 100 120 140 160 180 200
dIF/dt(A/µs)
VR=600V
Tj=125°C
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