SGS Thomson Microelectronics STT4NF30L Datasheet
N - CHANNEL 30V - 0.055Ω - 4A - TSOP-6
TYPE V
ST T 4NF30L 30 V < 0.065 Ω 4A
■ TYPICALR
■ STANDARD OUTLINE FOR EASY
DS(on)
DSS
= 0.055 Ω
AUTOMATEDSURFACEMOUNTASSEMBLY
■ LOW THRESHOLDDRIVE
DESCRIPTION
This Power MOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process.The resulting transi-
stor shows extremelyhigh packing density forlow
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a remarkablemanufacturingreproducibility.
APPLICATIONS
■ DC MOTOR DRIVE
■ DC-DCCONVERTERS
■ BATTERYMANAGEMENTIN NOMADIC
EQUIPMENT
■ POWERMANAGEMENT IN
PORTABLE/DESKTOPPCs
R
DS(on)
I
D
STT4NF30L
STripFET MOSFET
PRELIMINARY DATA
TSOP-6
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
(•) Pulsewidth limited by safe operating area
November 1998
Dra in- sour c e Vol t age ( VGS=0) 30 V
DS
Dra in- gate Volt age (RGS=20kΩ)30V
DGR
Gat e-sourc e Voltage
GS
I
Dra in C u rr ent (c ont in uous) at Tc=25oC4A
D
I
Dra in C u rr ent (c ont in uous) at Tc=100oC2.5A
D
(•) D rain Curr ent (p ulsed ) 16 A
Tot al Dissipation at Tc=25oC2W
tot
20 V
±
1/5
STT4NF30L
THERMAL DATA
R
thj-amb
T
T
(*)Mounted on FR-4 board (t ≤ 5 sec)
(*)T hermal Resistance Junction-ambie nt Max
Maximum O per ating Junct io n Tempe rat ur e
J
Sto rage Temperatur e
stg
62.5
150
-55 to 150
o
C/W
o
o
C
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 30 V
Break dow n V o lt age
ON (
I
DSS
I
GSS
∗)
Zero Gate Voltage
Drain Cur re nt ( V
GS
Gat e- bod y L eakage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 125oC
V
DS
= ± 20 V ± 100 nA
V
GS
1
10
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage VDS=VGSID= 250 µA11.72.5V
Sta t ic Drain -s ource On
Resistance
VGS=10V ID=2A
=4.5V ID=2A
V
GS
On State Drain Current VDS>I
D(on)xRDS(on)max
0.055
0.06
4A
0.065
0.09
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capac i t ance
iss
Out put Capacitance
oss
Reverse Tr ansfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=6 A 6 S
VDS=25V f=1MHz VGS= 0 420
62
20
550
80
30
µA
µA
Ω
Ω
pF
pF
pF
2/5
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