SGS Thomson Microelectronics STT3PF30L Datasheet
STT3PF30L
P-CHANNEL 30V - 0.14 Ω - 3A SO T23-6L
STripFET™ II POWER MOSFET
TYPE
V
DSS
STT3PF30L 30 V <0.165
■ TYPICAL R
■ STANDARD OUTLIN E FO R EASY
(on) = 0.14 Ω
DS
R
DS(on)
I
D
3 A
Ω
AUTOMATED SURFACE MOUNT ASSEMBLY
■ LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest dev elo pment of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ DC MOTOR DRIVE
■ DC-DC CONVERTERS
■ BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
■ POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
■ CELLULAR
SOT23-6L
INTERNAL SCHEMATIC DIAGRAM
MARKING
■ STA3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
(
I
DM
P
tot
(
Pulse width limited by safe operating area. Note: P-CHANNEL MOSFET actual polarity of voltages and current
•)
.
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
30 V
30 V
Gate- source Voltage ± 16 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
•)
Drain Current (pulsed) 10 A
Total Dissipation at TC = 25°C
has to be reversed
2.4 A
1.5 A
1.6 W
1/8September 2002
STT3PF30L
THERMAL DATA
Rthj-amb
Rthj-amb
T
T
stg
(*) Mounted on a 1 inch pad of 2 oz. Cu in FR-4 board
(**) Mounted on a minimu m pad of 2 oz. Cu in FR- 4 board
(*)Thermal Resistance Junction-ambient
(**)Thermal Resistance Junction-ambient
Max. Operating Junction Temperature
j
Storage Temperature
Max
Max
78
156
-55 to 150
-55 to 150
°C/W
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
V
(BR)DSS
Drain-source
= 250 µA, VGS = 0
D
30
Breakdown Voltage
V
= Max Rating
DS
V
= Max Rating TC = 125°C
DS
V
= ± 16 V
GS
1
10
±100 nA
ON
(*)
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
= VGS ID = 250 µA
DS
= 10 V ID = 1.5 A
V
GS
V
= 4.5 V ID = 1.5 A
GS
1 1.6 2.5 V
0.14
0.16
0.165
0.2
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
=25 V ID= 1.5 A
DS
= 25V f = 1 MHz, VGS = 0
V
DS
4S
420
95
30
V
µA
µA
Ω
Ω
pF
pF
pF
2/8
STT3PF30L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 15 V ID = 1.5 A
t
d(on)
Turn-on Delay Time
t
r
Rise Time
V
DD
R
= 4.7 Ω VGS = 4.5 V
G
(Resistive Load, Figure 1)
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
= 24V ID= 3A VGS=4.5V
V
DD
(see test circuit, Figure 2)
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 15 V ID = 1.5 A
t
d(off)
Turn-off Delay Time
t
f
Fall Time
V
DD
R
= 4.7Ω, V
G
GS
= 4.5 V
(Resistive Load, Figure 1)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by s afe operating area.
Source-drain Current
(•)
Source-drain Current (pulsed)
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
= 3 A VGS = 0
SD
= 3 A di/dt = 100A/µs
I
SD
V
= 15 V Tj = 150°C
DD
(see test circuit, Figure 3)
14.5
37
4.8
1.7
2
90
23
35
25
1.5
7nC
3
12
1.2 V
ns
ns
nC
nC
ns
ns
A
A
ns
nC
A
Safe Operating Area Thermal Impedance
3/8
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