SGS Thomson Microelectronics STT2PF60L Datasheet
STT2PF60L
P-CHANNEL 60V - 0.20 Ω - 2A SO T23-6L
STripFET™ II POWER MOSFET
PRELIMINARY DATA
TYPE
V
DSS
STT2PF60L 60 V <0.25
■ TYPICAL R
■ STANDARD OUTLIN E FO R EASY
(on) = 0.20 Ω
DS
R
DS(on)
I
D
Ω
2 A
AUTOMATED SURFACE MOUNT ASSEMBLY
■ LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest dev elo pment of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ DC MOTOR DRIVE
■ DC-DC CONVERTERS
■ BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
■ POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
■ CELLULAR
SOT23-6L
INTERNAL SCHEMATIC DIAGRAM
MARKING
■ STP6
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
(
I
DM
P
tot
(
Puls e width limit ed by safe opera ti ng are a. Note: F or t he P- CHA NNE L MOS FE T ac tu al po la rity o f v olt ages a nd
•)
May 2002
.
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
60 V
60 V
Gate- source Voltage ± 15 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
•)
Drain Current (pulsed) 8 A
Total Dissipation at TC = 25°C
current has to be rever sed
2A
1.3 A
1.6 W
1/6
STT2PF60L
THERMA L D ATA
Rthj-amb
Rthj-amb
T
T
stg
(*) Mounted on a 1 in2 pad of 2 oz Cu in F R-4 board
(**) Mounted on a minimum pad of 2 oz Cu in FR-4 board
(*)Thermal Resistance Junction-ambient
(**)Thermal Resistance Junction-ambient
Max. Operating Junction Temperature
j
Storage Temperature
Max
Max
78
156
150
-55 to 150
°C/W
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
V
(BR)DSS
Drain-source
= 250 µA, VGS = 0
D
60
Breakdown Voltage
V
= Max Rating
DS
V
= Max Rating TC = 125°C
DS
= ± 15 V
V
GS
1
10
±100 nA
ON
(*)
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
= VGS ID = 250 µA
DS
= 10 V ID = 1 A
V
GS
V
= 4.5 V ID = 1 A
GS
1V
0.20
0.24
0.25
0.30
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 10 V
DS
= 25V f = 1 MHz, VGS = 0
V
DS
ID =1 A
3S
313
67
25
V
µA
µA
Ω
Ω
pF
pF
pF
2/6
Loading...