STT2PF60L
P-CHANNEL 60V - 0.20 Ω - 2A SO T23-6L
STripFET™ II POWER MOSFET
PRELIMINARY DATA
TYPE
V
DSS
STT2PF60L 60 V <0.25
■ TYPICAL R
■ STANDARD OUTLIN E FO R EASY
(on) = 0.20 Ω
DS
R
DS(on)
I
D
Ω
2 A
AUTOMATED SURFACE MOUNT ASSEMBLY
■ LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest dev elo pment of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ DC MOTOR DRIVE
■ DC-DC CONVERTERS
■ BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
■ POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
■ CELLULAR
SOT23-6L
INTERNAL SCHEMATIC DIAGRAM
MARKING
■ STP6
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
(
I
DM
P
tot
(
Puls e width limit ed by safe opera ti ng are a. Note: F or t he P- CHA NNE L MOS FE T ac tu al po la rity o f v olt ages a nd
•)
May 2002
.
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
60 V
60 V
Gate- source Voltage ± 15 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
•)
Drain Current (pulsed) 8 A
Total Dissipation at TC = 25°C
current has to be rever sed
2A
1.3 A
1.6 W
1/6
STT2PF60L
THERMA L D ATA
Rthj-amb
Rthj-amb
T
T
stg
(*) Mounted on a 1 in2 pad of 2 oz Cu in F R-4 board
(**) Mounted on a minimum pad of 2 oz Cu in FR-4 board
(*)Thermal Resistance Junction-ambient
(**)Thermal Resistance Junction-ambient
Max. Operating Junction Temperature
j
Storage Temperature
Max
Max
78
156
150
-55 to 150
°C/W
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
V
(BR)DSS
Drain-source
= 250 µA, VGS = 0
D
60
Breakdown Voltage
V
= Max Rating
DS
V
= Max Rating TC = 125°C
DS
= ± 15 V
V
GS
1
10
±100 nA
ON
(*)
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
= VGS ID = 250 µA
DS
= 10 V ID = 1 A
V
GS
V
= 4.5 V ID = 1 A
GS
1V
0.20
0.24
0.25
0.30
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 10 V
DS
= 25V f = 1 MHz, VGS = 0
V
DS
ID =1 A
3S
313
67
25
V
µA
µA
Ω
Ω
pF
pF
pF
2/6
STT2PF60L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 30 V ID = 1 A
t
d(on)
Turn-on Delay Time
t
r
Rise Time
V
DD
R
= 4.7 Ω VGS = 4.5 V
G
(Resistive Load, Figure 1)
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
= 30 V ID= 2A VGS=5V
V
DD
(see test circuit, Figure 2)
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 30 V ID = 1 A
t
d(off)
Turn-off Delay Time
t
f
Fall Time
V
DD
R
= 4.7Ω, V
G
GS
= 4.5 V
(Resistive Load, Figure 1)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by s af e operatin g area.
Source-drain Current
(•)
Source-drain Current (pulsed)
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
= 2 A VGS = 0
SD
= 2 A di/dt = 100A/µs
I
SD
V
= 30 V Tj = 150°C
DD
(see test circuit, Figure 3)
44
34
5
0.5
2.2
42
15
38
47.5
2.5
7nC
2
8
1.2 V
ns
ns
nC
nC
ns
ns
A
A
ns
nC
A
3/6
STT2PF60L
Fig. 1: Switching Times Test Circuits For Resistive
Load
Fig. 3: Test Circuit For Diode Recovery Behaviour
Fig. 2: Gate Charge test Circuit
4/6
SOT23-6L MECHANICAL DATA
STT2PF60L
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 0.90 1.45 0.035 0.057
A1 0.00 0.15 0.000 0.006
A2 0.90 1.30 0.035 0.051
b 0.25 0.50 0.010 0.020
C 0.09 0.20 0.004 0.008
D 2.80 3.10 0.110 0.122
E 2.60 3.00 0.102 0.118
E1 1.50 1.75 0.059 0.069
L 0.35 0.55 0.014 0.022
e 0.95 0.037
e1 1.90 0.075
mm mils
AA2
A1
b
e
c
L
E
e1
D
E1
5/6
STT2PF60L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise under any patent or p atent rights of STMi croelectr oni cs. Spec i fications mentioned i n this publicatio n are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as cri tical comp onents in life support dev i ces or systems wi t hout expres s written approval of STMi croelectr o nics.
The ST logo is registered trademark of STMicroelectronics
2002 STMi croelectr onics - All Rights Rese rved
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