SGS Thomson Microelectronics STT1NF100 Datasheet
STT1NF100
N-CHANNEL 100V - 0.7Ω -1ASOT23-6L
STripFET™ II POWER MOSFET
PRELIMINARY DATA
TYPE V
DSS
R
DS(on)
I
D
STT1NF100 100V <0.8Ω 1A
■ TYPICAL R
■ EXCEPTIONAL dv/dt CAPABILITY
■ VERY LOW Qg
DS(on)
=0.7Ω
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size
™”strip-
based process. The resulting transistor shows extremely high packing density for low on-resistance,
rugged avalance charac teristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ DC-DC & DC-AC CONVERTERS
■ DC MOTOR CONTROL (DISK DRIV ES, etc.)
■ SYNCHRONOUS RECTIFICATION
SOT23-6L
INTERNAL SCHEMATIC DIAGRAM
MARKING
■ STQ0
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt(1) Peak Diode Recovery voltage slope 20 V/ns
T
stg
T
j
(●) Pulse width limited by safe operating area
September 2002
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
100 V
100 V
Gate- source Voltage ± 20 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
()
Drain Current (pulsed) 4 A
Total Dissipation at TC= 25°C
1A
0.6 A
1.6 W
Derating Factor 0.013 W/°C
Storage Temperature
Max. Operating Junction Temperature
(1) ISD≤1A, di/dt ≤350A/µs, VDD≤ V
–55to150 °C
(BR)DSS,Tj≤TJMAX.
1/6
STT1NF100
THERMAL DATA
Rthj-amb(*) Thermal Resistance Junction-ambient Max 78 °C/W
T
l
(*) When mounted on FR-4 board of 1inch² pad, 0.5oz Cu
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLES S OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Maximum Lead Temperature For Soldering Purpose 260 °C
Drain-source
ID= 250 µA, VGS= 0 100 V
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
V
= Max Rating
DS
VDS= Max Rating, TC= 125 °C
V
= ± 20V ±100 nA
GS
V
DS=VGS,ID
=10V,ID= 0.5 A
V
GS
= 250µA
2V
0.7 0.8 Ω
1µA
10 µA
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS=15V,ID=1A 1 S
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 20 pF
Reverse Transfer
Capacitance
V
=25V,f=1MHz,VGS=0
DS
105 pF
9pF
2/6
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