SGS Thomson Microelectronics STSJ2NM60 Datasheet
STSJ2NM60
N-CHANNEL 600V - 2.8Ω - 2A PowerSO-8
Zener-Protected MDmesh™ POWER MOSFET
TYPE V
STSJ2NM60 600 V < 3.2 Ω 2 A
■ TYPICAL R
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ IMPROVED ESD CAPABILITY
■ LOW INPUT CAPACITANCE AND GATE
DS
DSS
(on) = 2.8 Ω
R
DS(on)
I
D
CHARGE
■ LOW GATE INPUT RESIST ANC E
■ TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
DESCRIPTION
The MDmesh™
is a new revolutionary MOSFET
technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increase
the power density of high voltage converters allowing system miniaturization and higher efficiencies.
PowerSO-8
INTERNAL SCHEMATIC DIAGRAM
DRAIN CONTACT ALSO ON THE BACKSIDE
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
DM
P
TOT
P
TOT
dv/dt (3) Peak Diode Recovery voltage slope 15 V/ns
T
stg
T
(2)
j
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TA = 25°C (1)
Drain Current (continuous) at T
Drain Current (pulsed) 8 A
Total Dissipation at TC = 25°C
Total Dissipation at TA = 25°C (1)
Derating Factor (1) 0.02 W/°C
Storage Temperature
Max. Operating Junction Temperature
= 100°C
C
600 V
600 V
2
0.37
1.26
70
3
– 65 to 150 °C
A
A
A
W
W
1/8August 2002
STSJ2NM60
THERMA L D ATA
Rthj-c Thermal Resistance Junction-case Max 1.78 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max (1) 42 °C/W
T
T
stg
Max. Operating Junction Temperature 150 °C
j
Storage Temperature – 65 to 150 °C
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID = 1 mA, VGS = 0 600 V
Breakdown Voltage
V
= Max Rating
DS
VDS = Max Rating, TC = 125 °C
V
= ± 20V ±5 µA
GS
1µA
10 µA
ON
I
I
GSS
(1)
DSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
= VGS, ID = 250µA
DS
VGS = 10 V, ID = 1 A
345V
2.8 3.2 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(4) Forward Transconductance VDS > I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 67 pF
Reverse Transfer
Capacitance
R
G
Gate Input Resistance f=1 MHz Gate DC Bias = 0
ID= 2 A
V
DS
Test Signal Level = 20mV
Open Drain
x R
D(on)
DS(on)max,
= 25 V, f = 1 MHz, VGS = 0
1.4 S
160 pF
4pF
3.5 Ω
2/8
STSJ2NM60
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 8 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Off-Voltage Rise Time
Fall Time
Cross-Over Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (4)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Note: 1. When mounted on 1inch² FR4 Board, 2oz of Cu, t ≤ 10 sec.
2. Pulse width l i m i ted by safe oper ating area
3. I
4. Pulsed: Pu l se duration = 400 µs, duty cycl e 1.5 %
Source-drain Current 2 A
(2)
Source-drain Current (pulsed) 8 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
<3.3A, di/dt<400A/µs, VDD<V
SD
(BR)DSS
, TJ<T
= 300 V, ID = 1 A
DD
R
= 4.7Ω VGS = 10 V
G
(see test circuit, Figure 3)
VDD = 480 V, ID = 2 A,
VGS = 10 V
= 480 V, ID = 2 A,
V
DD
RG=4.7Ω, V
GS
= 10 V
(see test circuit, Figure 3)
ISD = 2 A, VGS = 0
= 2, di/dt = 100A/µs,
I
SD
VDD = 100 V, Tj = 25°C
(see test circuit, Figure 5)
ISD = 2, di/dt = 100A/µs,
V
= 100 V, Tj = 150°C
DD
(see test circuit, Figure 5)
JMAX
13 ns
6
8.4
1.8
3.3
12
25
30
1.5 V
516
516
2
808
890
2.2
nC
nC
nC
ns
ns
ns
ns
nC
A
ns
nC
A
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Igs=± 1mA (Open Drain) 30 V
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specif ically been designed to enhanc e not only t he dev ice’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is approp riate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoi d the
usage of external components.
3/8
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