SGS Thomson Microelectronics STSA851, STSA851-AP Datasheet
®
STSA851
LOW VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
PRELIMINARY DATA
Ordering
Code
Marking Package
/ Shipment
STSA851 SA851 TO-92 / Bulk
STSA851-AP SA851 TO-92 / Ammopack
■ VERY LOW CO LLECT O R TO EMITTER
SATURATION VOLTAGE
■ HIGH CURRENT GAIN CHARACTE RIS TIC
■ FAST-SWITCHIN G SPE ED
APPLICATIONS:
■ EMERGENCY LIGHTING
■ VOLTAG E REG UL A TO RS
■ RELAY DRIVERS
■ HIGH EFFICIE NCY LO W VO LT AGE
SWITCHING APPLICATIONS
DESCRIPTION
The device is manufactured in NPN Planar
Technology by using a "Base Island" layout.
The resulting Transistor shows exceptional high
gain performance coupled with very low
saturation voltage.
TO- 92
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
September 2003
Collector-Base Voltage (IE = 0) 150 V
CBO
Collector-Emitter Voltage (IB = 0) 60 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
I
Collector Current 5 A
C
Collector Peak Current (tp < 5 ms) 15 A
CM
I
Base Current 1 A
B
Total Dissipation at T
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
= 25 oC 1.1 W
amb
o
C
o
C
1/8
STSA851
THERMAL DATA
R
thj-amb
R
thj-case
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-case Max
114
83.3
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
I
V
(BR)CBO
CBO
EBO
Collector Cut-off
Current (I
= 0)
E
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Base
= 120 V
V
CB
V
= 120 V Tj = 100 oC
CB
= 7 V 10 nA
V
EB
= 100 µA
I
C
150 V
50
1
Breakdown Voltage
(I
= 0)
E
V
(BR)CEO
∗ Collector-Emitter
I
= 10 mA 60 V
C
Breakdown Voltage
(I
= 0)
B
V
∗ Emitter-Base
(BR)EBO
= 100 µA
I
E
7V
Breakdown Voltage
(I
= 0)
C
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
IC = 100 mA IB = 5 mA
I
= 1 A IB = 50 mA
C
I
= 2 A IB = 50 mA
C
I
= 5 A IB = 200 mA
C
10
70
140
320
IC = 4 A IB = 200 mA 1 1.15 V
50
120
200
450
Saturation Voltage
∗ Base-Emitter On
V
BE(on)
IC = 4 A VCE = 1 V 0.89 1 V
Voltage
∗ DC Current Gain IC = 10 mA VCE = 1 V
h
C
FE
f
T
CBO
Transition frequency V
Collector-Base
I
= 2 A VCE = 1 V
C
I
= 5 A VCE = 1 V
C
I
= 10 A VCE = 1 V
C
= 10 V IC = 100 mA 130 MHz
CE
VCB = 10 V f = 1 MHz 47 pF
150
150
90
30
300
270
140
50
350
Capacitance
RESISTIVE LOAD
s
t
f
Turn- on Time
Storage Time
Fall Time
t
ON
t
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
I
= 1 A VCC = 10 V
C
I
= - IB2 = 0.1 A
B1
50
1.35
120
nA
µA
mV
mV
mV
mV
ns
µs
ns
2/8
STSA851
Derating Curve
DC Current Gain
Collector-Em itter Sat uration Volt ag e Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage Base-Emitter On Voltage
3/8
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