®
STSA851
LOW VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
PRELIMINARY DATA
Ordering
Code
Marking Package
/ Shipment
STSA851 SA851 TO-92 / Bulk
STSA851-AP SA851 TO-92 / Ammopack
■ VERY LOW CO LLECT O R TO EMITTER
SATURATION VOLTAGE
■ HIGH CURRENT GAIN CHARACTE RIS TIC
■ FAST-SWITCHIN G SPE ED
APPLICATIONS:
■ EMERGENCY LIGHTING
■ VOLTAG E REG UL A TO RS
■ RELAY DRIVERS
■ HIGH EFFICIE NCY LO W VO LT AGE
SWITCHING APPLICATIONS
DESCRIPTION
The device is manufactured in NPN Planar
Technology by using a "Base Island" layout.
The resulting Transistor shows exceptional high
gain performance coupled with very low
saturation voltage.
TO- 92
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
September 2003
Collector-Base Voltage (IE = 0) 150 V
CBO
Collector-Emitter Voltage (IB = 0) 60 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
I
Collector Current 5 A
C
Collector Peak Current (tp < 5 ms) 15 A
CM
I
Base Current 1 A
B
Total Dissipation at T
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
= 25 oC 1.1 W
amb
o
C
o
C
1/8
STSA851
THERMAL DATA
R
thj-amb
R
thj-case
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-case Max
114
83.3
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
I
V
(BR)CBO
CBO
EBO
Collector Cut-off
Current (I
= 0)
E
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Base
= 120 V
V
CB
V
= 120 V Tj = 100 oC
CB
= 7 V 10 nA
V
EB
= 100 µA
I
C
150 V
50
1
Breakdown Voltage
(I
= 0)
E
V
(BR)CEO
∗ Collector-Emitter
I
= 10 mA 60 V
C
Breakdown Voltage
(I
= 0)
B
V
∗ Emitter-Base
(BR)EBO
= 100 µA
I
E
7V
Breakdown Voltage
(I
= 0)
C
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
IC = 100 mA IB = 5 mA
I
= 1 A IB = 50 mA
C
I
= 2 A IB = 50 mA
C
I
= 5 A IB = 200 mA
C
10
70
140
320
IC = 4 A IB = 200 mA 1 1.15 V
50
120
200
450
Saturation Voltage
∗ Base-Emitter On
V
BE(on)
IC = 4 A VCE = 1 V 0.89 1 V
Voltage
∗ DC Current Gain IC = 10 mA VCE = 1 V
h
C
FE
f
T
CBO
Transition frequency V
Collector-Base
I
= 2 A VCE = 1 V
C
I
= 5 A VCE = 1 V
C
I
= 10 A VCE = 1 V
C
= 10 V IC = 100 mA 130 MHz
CE
VCB = 10 V f = 1 MHz 47 pF
150
150
90
30
300
270
140
50
350
Capacitance
RESISTIVE LOAD
s
t
f
Turn- on Time
Storage Time
Fall Time
t
ON
t
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
I
= 1 A VCC = 10 V
C
I
= - IB2 = 0.1 A
B1
50
1.35
120
nA
µA
mV
mV
mV
mV
ns
µs
ns
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STSA851
Derating Curve
DC Current Gain
Collector-Em itter Sat uration Volt ag e Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage Base-Emitter On Voltage
3/8
STSA851
Switching Times Resistive Load
Switching Times Resistive Load
Switching Times Resistive Load
Switching Times Inductive Load
Switching Times Inductive Load
4/8
Figure 1: Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
STSA851
5/8
STSA851
TO-92 MECHANICA L DAT A
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.32 4.95 0.170 0.195
b 0.36 0.51 0.014 0.020
D 4.45 4.95 0.175 0.194
E 3.30 3.94 0.130 0.155
e 2.41 2.67 0.095 0.105
e1 1.14 1.40 0.045 0.055
L 12.70 15.49 0.500 0.609
R 2.16 2.41 0.085 0.094
S1 1.14 1.52 0.045 0.059
W 0.41 0.56 0.016 0.022
V 4 degree 6 degree 4 degree 6 degree
mm inch
6/8
STSA851
TO-92 AMMOPACK SHIPMENT (Suffix"-AP") MECHANICAL DATA
DIM.
A1 4.80 0.189
T 3.80 0.150
T1 1.60 0.063
T2 2.30 0.091
d 0.48 0.019
P0 12.50 12.70 12.90 0.492 0.500 0.508
P2 5.65 6.35 7.05 0.222 0.250 0.278
F1,F2 2.44 2.54 2.94 0.096 0.100 0.116
delta H -2.00 2.00 -0.079 0.079
W 17.50 18.00 19.00 0.689 0.709 0.748
W0 5.70 6.00 6.30 0.224 0.236 0.248
W1 8.50 9.00 9.25 0.335 0.354 0.364
W2 0.50 0.020
H 18.50 20.50 0.728 0.807
H0 15.50 16.00 16.50 0.610 0.630 0.650
H1 25.00 0.984
D0 3.80 4.00 4.20 0.150 0.157 0.165
t 0.90 0.035
L 11.00 0.433
I1 3.00 0.118
delta P -1.00 1.00 -0.039 0.039
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
7/8
STSA851
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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© 2003 STMicroelectronics – All Rights reserved
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