SGS Thomson Microelectronics STS9NF3LL Datasheet

STS9NF3LL

N-CHANNEL 30V - 0.016 Ω - 9A SO-8

LOW GATE CHARGE STripFET™ II POWER MOSFET

TYPE

V

DSS

STS9NF3LL 30 V <0.019

■ TYPICAL R

■ OPTIMAL R

■ CONDUCTION LOSSES REDUCED

■ SWITCHING LOSSES REDUCED

(on) = 0.016 Ω

DS

(on) x Qg TRADE-OFF @ 4.5V

DS

R

DS(on)

I

D

9 A

Ω

DESCRIPTION

This application speci fic Power MOSFET is the second generation of STMicro electronis unique "Single Feature

Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the be st perfor manc e in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.

APPLICATIONS

■ SPECIFICALL Y D ESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PC

S

SO-8

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

(

I

DM

P

tot

(

Pulse widt h l i m i ted by safe operating area.

•)

.

Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ)

30 V

30 V Gate- source Voltage ± 16 V Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C

•)

Drain Current (pulsed) 36 A Total Dissipation at TC = 25°C

9A

5.6 A

2.5 W

1/8November 2001

STS9NF3LL

THERMA L D ATA

Rthj-amb

T

stg

(*)

When mounted on FR-4 board with 0.5 in2 pad of Cu.

(*)

Thermal Resistance Junction-ambient

Maximum Operating Junction Temperature

j

Storage Temperature

Max 50

150

-55 to 150

°C/W

°C °C

ELECTRICAL CHARACTERISTICS (T

= 25 °C unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

= 250 µA, VGS = 0

D

V

= Max Rating

DS

V

= Max Rating TC = 125°C

DS

= ± 16 V

V

GS

30 V

1

10

±100 nA

ON

V

(BR)DSS

I

DSS

I

GSS

(*)

Drain-source Breakdown Voltage

Zero Gate Voltage Drain Current (V

GS

Gate-body Leakage Current (V

DS

= 0)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage Static Drain-source On

Resistance

= VGS I

DS

= 10 V ID = 4.5 A

V

GS

V

= 4.5 V ID = 4.5 A

GS

= 250 µA

D

1V

0.016

0.019

0.022

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(*)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance Input Capacitance

Output Capacitance Reverse Transfer Capacitance

V

=15 V ID=4 A

DS

= 25V, f = 1 MHz, VGS = 0

V

DS

12.5 S 800

250

60

µA µA

Ω Ω

pF pF pF

2/8

STS9NF3LL

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 15 V ID = 4.5 A

t

d(on)

Turn-on Delay Time

t

r

Rise Time

V

DD

R

= 4.7 Ω VGS = 4.5 V

G

(Resistive Load, Figure 1)

Q

g

Q

gs

Q

gd

Total Gate Charge Gate-Source Charge Gate-Drain Charge

= 15 V ID= 9 A VGS= 5 V

V

DD

(see test circuit, Figure 2)

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 15 V ID = 4.5 A

t

d(off)

Turn-off Delay Time

t

f

Fall Time

V

DD

R

= 4.7Ω, V

G

GS

= 4.5 V

(Resistive Load, Figure 3)

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

(*)

Pulsed: P ul se duration = 300 µs, duty cy cle 1.5 %.

(

•)Pulse width limited by safe operating area.

Source-drain Current

(•)

Source-drain Current (pulsed)

(*)

Forward On Voltage Reverse Recovery Time

Reverse Recovery Charge Reverse Recovery Current

I

= 9 A VGS = 0

SD

= 9 A di/dt = 100A/µs

I

SD

V

= 15 V Tj = 150°C

DD

(see test circuit, Figure 3)

18 32

12.5

3.2

4.5

21 11

23 17

1.5

17 nC

9

36

1.2 V

ns ns

nC nC

ns ns

A A

ns

nC

A

Safe Operating Area

Thermal Impedance

3/8