SGS Thomson Microelectronics STS8NFS30L Datasheet
STS8NFS30L
STripFET
MAIN PRODUCT CHARACTERISTICS
MOSFET
SCHOTTKY
DESCRIPTION:
This product associates the latest low voltage
StripFET
Schottky diode. Such configuration is extremely
versatile in implementing, a large variety of DCDC converters for printers, portable equipment,
and cellularphones.
MOSFETABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
in n-channel version to a low drop
V
V
V
I
DM
P
Drain-source Volta ge (VGS=0) 30 V
DS
Drain- gate Volta ge (RGS=20kΩ)30V
DGR
Gat e- sour c e Volt age ± 20 V
GS
I
Drain Current ( cont inuous ) a t Tc=25oC8A
D
I
Drain Current ( cont inuous ) a t Tc= 100oC5A
D
(•) Drain Current (pulsed) 32 A
Tot al D iss ip at ion at Tc=25oC2.5W
tot
MOSFET PLUS SCHOTTKY RECTIFIER
V
DSS
30 V <0.022 Ω 8A
I
F(AV)
3A 30V 0.51V
R
DS(on)
V
RRM
V
F(MAX)
I
D
SO-8
INTERNAL SCHEMATIC DIAGRAM
N - CHANNEL 30V - 0.018Ω - 8A S0-8
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Valu e Unit
V
I
F(RMS)
I
F ( AV)
I
FSM
I
RSM
dv/d t Critical Rat e Of Rise O f Revers e V olt age 10000 V/µs
(•) Pulse width limited by safeoperatingarea
December 1999
Repetitive Peak Rev er se Vol t age 30 V
RRM
RMS Forwa r d Current 20 A
Aver ag e F orw ar d Current TL=125oC
δ =0.5
Surge N on Repetitive F orward Current tp= 1 0 ms
Sinusoidal
Non Repet it i v e Peak Rever se Curr e nt tp= 100 µs1 A
3A
75 A
1/8
STS8NFS30L
THERMAL DATA
R
thj-amb
R
thj-amb
T
T
(*) Thermal Resist ance Junction-ambient MOSFE T
(*) Thermal Resist ance Junction- ambientSCHOTT KY
Sto rage Temperature Range Maxim u m
stg
Junct ion T em per ature
j
(*)
mounted on FR-4 board (steady state)
50
100
-65 t o 150
150
o
C/W
o
C/W
o
o
C
C
MOSFETELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 30 V
Break dow n Voltage
I
DSS
I
GSS
Zero Gate Volta ge
Drain Current ( V
GS
Gat e- bod y Leakage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 125oC
V
DS
V
=± 20 V
GS
1
10
100 nA
±
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage VDS=VGSID= 250 µA11.62.5V
Sta t ic Drain-s ource On
Resistance
VGS=10V ID=4A
=4.5V ID=4A
V
GS
On State Drain Current VDS>I
D(on)xRDS(on)max
0.018
0.021
8A
0.022
0.026ΩΩ
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t ance
iss
Out put Capac it ance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=4 A 10 S
VDS=25V f=1MHz VGS= 0 1050
250
85
µ
µA
pF
pF
pF
A
2/8
STS8NFS30L
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
Tur n-on Delay Time
Rise T ime
r
VDD=15V ID=4A
R
G
=4.7
VGS=4.5V
Ω
22
60
(Resis t iv e Load, s ee f ig. 3)
Q
Q
Q
Tot al Gate C harge
g
Gat e- Source Charg e
gs
Gate-Drain Charge
gd
VDD=24V ID=8A VGS= 4. 5 V 17.5
4
7
23 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Tur n-of f Dela y T im e
t
Fall Time
f
VDD=15V ID=4A
=4.7Ω VGS=4.5V
R
G
42
10
(Resis t iv e Load, s ee f ig. 3)
t
r(Voff)
t
t
Off-vo ltage Rise T im e
Fall Time
f
Cross-over T ime
c
VDD=24V ID=8A
=4.7Ω VGS=4.5V
R
G
(Indu ct iv e Load, se e fig. 5)
11
12
25
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Source-drain Current
(•)
Source-drain Current
8
32
(pulsed)
(∗)ForwardOnVoltage ISD=8A VGS=0 2 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD=8A di/dt=100A/µs
=20V Tj= 150oC
V
DD
(see test circuit, figure 5)
50
40
Charge
Reverse Recovery
1.6
Current
ns
ns
nC
nC
ns
ns
ns
ns
ns
A
A
ns
nC
Α
SCHOTTCKY STATIC ELETTRICALCHARACTERISTICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
(∗) Reversed Leakage
R
Current
V
(∗) For ward Voltage drop TJ=25oCI
F
TJ=25oCV
=125oCV
T
J
=125oCI
T
J
=30V
R
=30V 0.03
R
=3A
F
=3A 0.38
F
0.2
100
0.51
0.46
mA
mA
V
V
3/8
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