SGS Thomson Microelectronics STS8NF30L Datasheet
STS8NF30L
N - CHANNEL 30V - 0.018Ω - 8A SO-8
STripFET POWER MOSFET
TYPE V
ST S8NF30L 30 V < 0.0 22 Ω 6A
■ TYPICALR
■ STANDARD OUTLINE FOR EASY
DS(on)
DSS
= 0.018 Ω
R
DS(on)
I
D
AUTOMATEDSURFACEMOUNTASSEMBLY
■ LOW THRESHOLDDRIVE
DESCRIPTION
This Power MOSFET isthe secondgeneration of
STMicroelectronics unique ” Single Feature
Size
”
strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
■ DC MOTOR DRIVE
■ DC-DCCONVERTERS
■ BATTERYMANAGMENTIN NOMADIC
EQUIPMENT
■ POWERMANAGEMENTIN
PORTABLE/DESKTOPPC
s
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Value Unit
V
V
V
I
DM
P
(•) Pulse width limitedby safe operating area
December 1999
Drain-source Voltage (VGS=0) 30 V
DS
Drain- g at e V olt ag e (RGS=20kΩ)30V
DGR
Gate-s ource Volta ge ± 20 V
GS
Drain Cur rent (cont inu ous ) at Tc = 25oC
I
D
Single O per ation
Drain Cur rent (cont inu ous ) at T
Single O per ation
(•) Drain Cur rent (pulsed) 32 A
Tot al Dissi pat ion at Tc=25oC 2.5 W
tot
=100oC
c
8
5
A
A
1/8
STS8NF30L
THERMAL DATA
R
thj-amb
T
T
(*)Mountedon FR-4board (SteadyState)
*Ther mal Resistan c e J u nc tion-ambient
Maximum O per ating Ju nct ion Temperat ure
j
Sto rage Temperat ure
stg
50
150
-65 to 150
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 30 V
Break dow n Vo lt age
ON (
I
DSS
I
GSS
∗)
Zero Gate Voltage
Drain Curre nt (V
GS
Gat e- bod y Leakag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
= ± 20 V ± 100 nA
V
GS
1
10
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage VDS=VGSID= 250 µ A11.62.5V
Sta t ic Drain-s our c e On
Resistance
VGS=10V ID=4A
=4.5V ID=4A
V
GS
On State Drain Current VDS>I
D(on)xRDS(on )max
0.018
0.021
8A
0.022
0.026
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t ance
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on )maxID
=4A 10 S
VDS=25V f=1MHz VGS= 0 V 1050
250
85
µA
µA
Ω
Ω
pF
pF
pF
2/8
STS8NF30L
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Tur n-on Delay Time
Rise Time
t
r
VDD=15V ID=4A
R
=4.7
G
Ω
VGS=4.5V
22
60
(Resis t iv e Load, see fig. 3)
Q
Q
Q
Tot al Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
VDD=24V ID=6A VGS= 4.5 V 17.5
4
7
23 nC
SWITCHINGOFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Tur n-of f Dela y Tim e
t
Fall T ime
f
VDD=15V ID=4A
=4.7 Ω VGS=4.5V
R
G
42
10
(Resis t iv e Load, see fig. 3)
t
r(Voff)
t
t
Off-volt age Rise Time
Fall T ime
f
Cross-over Tim e
c
V
=24V ID=8A
clamp
=4.7 Ω VGS=4.5V
R
G
(Indu ct iv e Load, see fig . 5)
11
12
25
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse width limited by safeoperating area
Source-drain Current
(•)
Source-drain Current
8
32
(pulsed)
(∗)ForwardOnVoltage ISD=8A VGS=0 1.2 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD=8A di/dt=100A/µs
=20V Tj=150oC
V
DD
(see test circuit, fig. 5)
50
40
Charge
Reverse Recovery
1.6
Current
ns
ns
nC
nC
ns
ns
ns
ns
ns
A
A
ns
nC
A
SafeOperating Area ThermalImpedance
3/8
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