SGS Thomson Microelectronics STS8DNF3LL Datasheet
STS8DNF3LL
DUAL N-CHANNEL 30V - 0.017 Ω - 8A SO-8
LOW GATE CHARGE STripFET™ II POWER MOSFET
TYPE
V
DSS
STS8DNF3LL 30 V <0.020
■ TYPICAL R
■ OPTIMAL R
■ CONDUCTION LOSSES REDUCED
■ SWITCHING LOSSES REDUCED
(on) = 0.017Ω
DS
(on) x Qg TRADE-OFF @ 4.5V
DS
R
DS(on)
I
D
8 A
Ω
DESCRIPTION
This application speci fic Power MOSFET is the second
generation of STMicro electronis unique "Single Feature
Size™" strip-based process. The resulting transistor
shows the best trade-off between on-resistance and gate
charge. When used as high and low side in buck
regulators, it gives the be st perfor manc e in terms of both
conduction and switching losses. This is extremely
important for motherboards where fast switching and
high efficiency are of paramount importance.
APPLICATIONS
■ SPECIFICALL Y D ESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS FOR MOBILE PC
S
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
DM
P
(
Pulse widt h l i m i ted by safe operating area.
•)
.
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
30 V
30 V
Gate- source Voltage ± 16 V
Drain Current (continuous) at TC = 25°C
8
Single Operation
Drain Current (continuous) at T
= 100°C
C
5
Single Operation
(
•)
Drain Current (pulsed) 32 A
Total Dissipation at TC = 25°C Dual operating
tot
Total Dissipation at T
= 25°C Single operating
C
2
1.6
A
W
W
1/8October 2002
STS8DNF3LL
THERMA L D ATA
Rthj-amb
T
T
stg
(*)
When mounted on FR-4 board with 0.5 in2 pad of Cu.
(*)Thermal Resistance Junction-ambient Single Operating
Thermal Operating Junction-ambient
j
Storage Temperature
Dual Operating
78
62.5
150
-55 to 150
°C/W
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
= 250 µA, VGS = 0
D
V
= Max Rating
DS
V
= Max Rating TC = 125°C
DS
V
= ± 16 V
GS
30 V
1
10
±100 nA
ON
V
(BR)DSS
I
DSS
I
GSS
(*)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
= VGS I
DS
= 10 V ID = 4 A
V
GS
V
= 4.5 V ID = 4 A
GS
= 250 µA
D
1V
0.017
0.020
0.020
0.024
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
=15 V ID=4 A
DS
= 25V, f = 1 MHz, VGS = 0
V
DS
12.5 S
800
250
60
µA
µA
Ω
Ω
pF
pF
pF
2/8
STS8DNF3LL
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 15 V ID = 4 A
t
d(on)
Turn-on Delay Time
t
r
Rise Time
V
DD
R
= 4.7 Ω VGS = 4.5 V
G
(Resistive Load, Figure 1)
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
= 15 V ID= 8 A VGS= 5 V
V
DD
(see test circuit, Figure 2)
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 15 V ID = 4 A
t
d(off)
Turn-off Delay Time
t
f
Fall Time
V
DD
R
= 4.7Ω, V
G
GS
= 4.5 V
(Resistive Load, Figure 1)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: P ul se duration = 300 µs, duty cy cle 1.5 %.
(
•)Pulse width limited by safe operating area.
Source-drain Current
(•)
Source-drain Current (pulsed)
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
= 8 A VGS = 0
SD
= 8 A di/dt = 100A/µs
I
SD
V
= 15 V Tj = 150°C
DD
(see test circuit, Figure 3)
18
32
12.5
3.2
4.5
21
11
23
17
1.5
17 nC
8
32
1.2 V
ns
ns
nC
nC
ns
ns
A
A
ns
nC
A
Safe Operating Area Thermal Impedance
3/8
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