SGS Thomson Microelectronics STS7NF60L Datasheet
STS7NF60L
N-CHANNEL 60V - 0.017 Ω - 7.5A S O-8
STripFET™ II POWER MOSFET
TYPE
V
DSS
STS7NF60L 60 V < 0.0195
■ TYPICAL R
■ STANDARD OUTLIN E FO R EASY
(on) = 0.017 Ω
DS
R
DS(on)
I
D
7.5 A
Ω
AUTOMATED SURFACE MOUNT ASSEMBLY
■ LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest dev elo pment of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ DC MOTOR DRIVE
■ DC-DC CONVERTERS
■ BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
■ POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
(
I
DM
P
tot
E
AS
(
Pulse width limited by safe operating area. (1) Starting Tj = 25 oC, ID = 7.5 A VDD = 30 V
•)
.
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
60 V
60 V
Gate- source Voltage ± 16 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
•)
Drain Current (pulsed) 30 A
Total Dissipation at TC = 25°C
(1)
Single Pulse Avalanche Energy 350 mJ
7.5 A
4.7 A
2.5 W
1/8April 2002
STS7NF60L
THERMA L D ATA
Rthj-amb(#)
T
T
stg
(#)
When Mounted on 1 inch
Thermal Resistance Junction-ambient
Maximum Operating Junction Temperature
j
Storage Temperature
2
FR-4 board, 2 oz of Cu and t [ 10 sec.
Max 50
150
-55 to 150
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
= 250 µA, VGS = 0
D
V
= Max Rating
DS
V
= Max Rating TC = 125°C
DS
V
= ± 16 V
GS
60 V
1
10
±100 nA
ON
V
(BR)DSS
I
DSS
I
GSS
(*)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
= VGS I
DS
= 10 V ID = 3.5 A
V
GS
V
= 5 V ID = 3.5 A
GS
= 250 µA
D
1V
0.017
0.019
0.0195
0.0215
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
= 15 V ID= 3.5 A
DS
= 25V, f = 1 MHz, VGS = 0
V
DS
13 S
1700
300
100
µA
µA
Ω
Ω
pF
pF
pF
2/8
STS7NF60L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Q
g
Q
gs
Q
gd
(*)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
= 30 V ID = 3.5 A
V
DD
R
= 4.7 Ω VGS = 4.5 V
G
(Resistive Load, Figure 1)
= 48V ID 7.5A VGS=4.5V
V
DD
(see test circuit, Figure 2)
15
27
25
4.5
7
34 nC
ns
ns
nC
nC
SWITCHING OFF
(*)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off Delay Time
t
f
Fall Time
V
DD
R
= 4.7Ω, V
G
GS
= 4.5 V
47
20
= 30 V ID = 3.5 A
(Resistive Load, Figure 1)
SOURCE DRAIN DIODE
(*)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulse width [ 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by safe operating area.
Saf e Operating Ar ea
Source-drain Current
(•)
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
= 7.5 A VGS = 0
SD
=7.5 A di/dt = 100A/µs
I
SD
V
= 20 V Tj = 150°C
DD
(see test circuit, Figure 3)
Thermal Impedance
7.5
30
1.2 V
55
110
3.9
ns
ns
A
A
ns
nC
A
3/8
Loading...