SGS Thomson Microelectronics STS7DNF30L Datasheet
DUAL N - CHANNEL30V - 0.018Ω - 7A SO-8
TYPE V
ST S7DNF30L 30 V < 0.022 Ω 7A
■ TYPICALR
■ STANDARD OUTLINE FOR EASY
DS(on)
DSS
= 0.018 Ω
AUTOMATEDSURFACEMOUNTASSEMBLY
■ LOW THRESHOLDDRIVE
DESCRIPTION
This Power MOSFET is the secondgeneration of
STMicroelectronics unique ” Single Feature
Size
”
strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
R
DS(on)
I
D
STS7DNF30L
STripFET POWER MOSFET
PRELIMINARY DATA
SO-8
APPLICATIONS
■ DC MOTOR DRIVE
■ DC-DCCONVERTERS
■ BATTERYMANAGMENTIN NOMADIC
INTERNAL SCHEMATIC DIAGRAM
EQUIPMENT
■ POWERMANAGEMENTIN
PORTABLE/DESKTOPPC
s
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Value Unit
V
V
V
I
DM
P
(•) Pulse width limited by safeoperating area
Drain-source Volt age (VGS=0) 30 V
DS
Drain- gate Voltage (RGS=20kΩ)30V
DGR
Gate-s ource Voltage ± 20 V
GS
Drain Current (co ntinuous) at Tc = 25oC
I
D
Single Operat ion
Drain Current (co ntinuous) at T
Single Operat ion
(•) Drain Current (puls ed) 28 A
Tot al Di ssipation at Tc=25oC Dual Opera tion
tot
Tot al Di ssipation at T
=25oCSinlgeOperation
c
=100oC
c
7
4
2
1.6
A
A
W
W
November 1999
1/6
STS7DNF30L
THERMAL DATA
R
thj-amb
T
Tstg
(*)Mountedon FR-4 board (Steady State)
*Ther mal Resistan c e Junction-amb ient S ingle Opera ti on
Maximum Operating Ju nc t ion T emperat ure
j
Sto rage Temperature
Dual Operation
78
62.5
150
-65 to 150
o
C/W
o
C/W
o
o
C
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 30 V
Break dow n Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Cur rent ( V
GS
Gat e- bod y L eakage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
V
=± 20 V
GS
1
10
100 nA
±
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage VDS=VGSID= 250 µA11.62.5V
Sta t ic Drain -s ource On
Resistance
VGS=10V ID=3.5A
=4.5V ID=3.5A
V
GS
On State Drain Current VDS>I
D(on)xRDS(on )max
0.018
0.021
7A
0.022
0.026ΩΩ
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capac i t ance
iss
Out put Capacitance
oss
Reverse Tr ansfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on )maxID
=3.5A 10 S
VDS=25V f=1MHz VGS= 0 V 1050
250
85
µA
µA
pF
pF
pF
2/6
Loading...