SGS Thomson Microelectronics STS5PF30L Datasheet
P - CHANNEL30V - 0.053Ω - 5A SO-8
TYPE V
ST S5P F30L 30 V < 0.060 Ω 5A
■ TYPICALR
■ STANDARD OUTLINE FOR EASY
DS(on)
DSS
= 0.053 Ω
AUTOMATEDSURFACEMOUNTASSEMBLY
■ LOW THRESHOLDDRIVE
DESCRIPTION
This Power MOSFET is the secondgeneration of
STMicroelectronicsunique ”Single Feature Size
”
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturingreproducibility.
APPLICATIONS
■ BATTERYMANAGMENTIN NOMADIC
EQUIPMENT
■ POWERMANAGMENT IN CELLULAR
PHONES
R
DS(on)
I
D
STS5PF30L
STripFET POWER MOSFET
PRELIMINARY DATA
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Value Unit
V
V
V
I
DM
P
(•) Pulsewidth limited by safeoperating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
November 1999
Drain-source Voltage (VGS=0) 30 V
DS
Drain- gate V olt ag e (RGS=20kΩ)30V
DGR
Gate-s ource Voltage ± 20 V
GS
Drain C ur rent (co nt inuous) at Tc = 25oC
I
D
Single Operat ion
Drain C ur rent (co nt inuous) at T
Single Operat ion
(•) Drain C ur rent (pu lsed) 20 A
Tot al Dis sipation at Tc=25oC 2.5 W
tot
=100oC
c
5
3
A
A
1/6
STS5PF30L
THERMAL DATA
R
thj-amb
T
T
(*)
Mountedon FR-4board (t
*Ther mal Resistan c e Junction-amb ient
Maximum Operat ing Ju nct ion T emperat ure
j
Sto rage Temper at ure
stg
≤ 10
sec)
50
150
-55 to 150
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 30 V
Break dow n V o lt age
I
I
ON (∗
DSS
GSS
Zero Gate Voltage
Drain Curr e nt (V
Gat e- bod y L eakag e
Current (V
)
DS
=0)
GS
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
V
= ± 20 V ± 100 nA
GS
1
10
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage VDS=VGSID= 250 µA11.62.5V
Sta t ic Drain -s our c e O n
Resistance
On State Drain Current VDS>I
VGS=10V ID=3A
V
=4.5V ID=3A
GS
D(on)xRDS(on )max
0.053
0.067
0.060
0.075
5A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Tr ansfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on )maxID
=3A 10 S
VDS=25V f=1MHz VGS= 0 V 1350
490
130
µA
µ
Ω
Ω
pF
pF
pF
A
2/6
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