SGS Thomson Microelectronics STS4PF20V Datasheet

STS4PF20V

P-CHANNEL 20V - 0.090 Ω - 4A SO-8

2.7V-DRIVE STripFET™ II POWER MOSFET

TYPE

V

DSS

STS4PF20V 20 V

■ TYPICAL R

■ ULTRA LOW THRESHOLD

(on) = 0.090 Ω @ 4.5 V

DS

(on) = 0.100 Ω @ 2.7 V

DS

R

DS(on)

< 0.11 Ω ( @ 4.5 V ) < 0.135 Ω ( @ 2.7 V )

I

4 A

D

GATE DRIVE (2.7 V)

■ STANDARD OUTLI NE FO R EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

DESCRIPTION

This Power MOSFET is the latest dev elo pment of

STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

APPLICATIONS

■ MOBILE PHONE APPLICATIONS

■ DC-DC CONVERTERS

■ BATTERY MANAGEMENT IN NOMADIC

EQUIPMENT

SO-8

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

(

I

DM

P

tot

(

Pulse width limited by safe operating area. Note: For the P-CHANNEL MOSFET actual polarity of voltages and

•)

.

Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ)

20 V 20 V

Gate- source Voltage ± 12 V

Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C

•)

Drain Current (pulsed) 16 A Total Dissipation at TC = 25°C

current has to be rever sed

4A

2.5 A

2.5 W

1/8June 2002

STS4PF20V

THERMA L D ATA

Rthj-amb

T

stg

(*)

When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t [ 10 sec.

(*)

Thermal Resistance Junction-ambient

Maximum Operating Junction Temperature

j

storage temperature

Max 50

150

-55 to 150

°C/W

°C °C

ELECTRICAL CHARACTERISTICS (T

= 25 °C unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

= 250 µA, VGS = 0

D

V

= Max Rating

DS

V

= Max Rating TC = 125°C

DS

V

= ± 12V

GS

20 V

1

10

±100 nA

ON

V

(BR)DSS

I

DSS

I

GSS

(*)

Drain-source Breakdown Voltage

Zero Gate Voltage Drain Current (V

GS

Gate-body Leakage Current (V

DS

= 0)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage Static Drain-source On

Resistance

= VGS I

DS

= 4.5 V ID = 2 A

V

GS

V

= 2.7 V ID = 2 A

GS

= 250 µA

D

0.6 V

0.090

0.100

0.110

0.135

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(*)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance Input Capacitance

Output Capacitance Reverse Transfer Capacitance

V

=15V ID=2 A

DS

= 15V, f = 1 MHz, VGS = 0

V

DS

7.5 S

500 140

30

µA µA

Ω Ω

pF pF pF

2/8

STS4PF20V

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

r

Q

g

Q

gs

Q

gd

(*)

Turn-on Delay Time Rise Time

Total Gate Charge Gate-Source Charge Gate-Drain Charge

= 10 V ID = 2 A

V

DD

R

= 4.7 Ω VGS = 4.5 V

G

(Resistive Load, Figure 1)

= 10V ID= 4A VGS=4.5V

V

DD

(see test circuit, Figure 2)

38 39

6.2 1

1.4

ns ns

nC nC nC

SWITCHING OFF

(*)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Turn-off Delay Time

t

f

Fall Time

V

DD

R

= 4.7Ω, V

G

GS

= 4.5 V

54 12

= 10 V ID = 2 A

(Resistive Load, Figure 1)

t

r(Voff)

t

f

c

Off-voltage Rise Time Fall Time Cross-over Time

SOURCE DRAIN DIODE

(*)

= 16 V ID = 4 A

V

clamp

R

= 4.7Ω, V

G

GS

= 4.5 V

(Inductive Load, Figure 3)

46 11 15

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

(*)

Pulse wi dth [ 300 µs, duty cycle 1.5 %.

(

•)Pulse width limited by T

Safe Operating Area

Source-drain Current

(•)

Source-drain Current (pulsed)

(*)

Forward On Voltage Reverse Recovery Time

Reverse Recovery Charge Reverse Recovery Current

JMAX

I

= 4 A VGS = 0

SD

= 4 A di/dt = 100A/µs

I

SD

V

= 15 V Tj = 150°C

DD

(Inductive Load, Figure 3)

Thermal Impedance

4

16

1.2 V

20 13

1.3

ns ns

ns ns ns

A A

ns

nC

A

3/8