STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
MOSFET
V
DSS
20 V < 0.07
R
DS(on)
STS4DPFS2LS
P-CHANNEL 20V - 0.06Ω - 4A SO-8
I
D
Ω
4 A
SCHOTTKY
I
F(AV )
3 A 40 V 0.44 V
V
RRM
V
F(MAX)
SO-8
DESCRIPTION
This product associates the latest low voltage
STripFET™ in p-channel version to a low drop
INTERNAL SCHEMATIC DIAGRAM
Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and cellular phones.
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
(●)
DM
P
TOT
E
AS
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
20 V
20 V
Gate- source Voltage ± 20 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
4A
3.4 A
Drain Current (pulsed) 16 A
Total Dissipation at TC = 25°C
(1)
Single Pulse Avalanche Energy 20 mJ
2W
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
dv/dt
(•)Pu l se width limite d by safe operat i ng area
(1) Starting T
Repetitive Peak Reverse Voltage 40 V
RMS Forward Current 10 A
Average Forward Current TL = 120°C
δ
= 0.5
Surge Non Repetitive Forward Current tp = 10 ms
3A
75 A
Sinusoidal
Repetitive Peak Reverse Current tp = 2 µs
1A
F = 1 kHz
Critical Rate Of Rise Of Reverse Voltage 10000 V/µs
= 25°C, ID = 2.5 A, VDD = 20 V
j
Note: For the P-CHANNEL MOSFET actual polarity of Voltages
and current has to be reversed
1/8February 2001
STS4DPFS2LS
THERMA L D ATA
Rthj-amb (*)Thermal Resistance Junction-ambient MOSFET 62.5 °C/W
Rthj-amb (*)Thermal Resistance Junction-ambient SCHOTTKY 100 °C/W
T
stg
T
l
MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Storage Temperature Range -55 to 150 °C
Junction Temperature 150 °C
(*) Mounted on FR-4 board (Steady State)
Drain-source
ID = 250 µA, VGS = 0 20 V
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current VDS > I
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ± 20 V ±100 nA
GS
V
= VGS, ID = 250µA
DS
VGS = 10V, ID = 2.5 A
VGS = 4.5V, ID = 2.5 A
x R
D(on)
DS(on)max,
1 1.6 2.5 V
0.06 0.07
0.07 0.085
16 A
1µA
10 µA
VGS=10V
Ω
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 490 pF
Reverse Transfer
Capacitance
ID=2 A
V
DS
x R
D(on)
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
5S
1350 pF
130 pF
2/8
STS4DPFS2LS
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
gs
gd
Turn-on Delay Time
Rise Time 35 ns
Total Gate Charge
g
Gate-Source Charge 5 nC
Gate-Drain Charge 3 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
t
r(Voff)
t
t
f
f
c
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycl e 1. 5 %.
2. Pulse width li mited by safe operating area.
Source-drain Current 4 A
(2)
Source-drain Current (pulsed) 16 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 36 nC
Reverse Recovery Current 1.6 A
= 15V, ID = 3A RG=4.7Ω
DD
V
= 10V
GS
(see test circuit, Figure 3)
V
= 24V, ID = 6A,
DD
VGS = 4.5 V
VDD = 15 V, ID = 2A,
RG=4.7Ω, V
GS
= 4.5 V
(see test circuit, Figure 3)
= 24 V, ID = 6 A,
V
clamp
RG=4.7Ω, V
GS
= 4.5 V
(see test circuit, Figure 5)
ISD = 4 A, VGS = 0
I
= 4 A, di/dt = 100A/µs,
SD
V
= 15 V, Tj = 150°C
DD
(see test circuit, Figure 5)
25 ns
12.5 16 nC
125
30
83
40
75
1.2 V
45 ns
ns
ns
ns
ns
ns
SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*) Reve rsed Leak age Curren t TJ = 25 °C , VR = 30 V
I
R
TJ = 125 °C , VR = 30 V
(*) Forward Voltage Drop TJ = 25 °C , IF = 1 A
V
F
T
= 125 °C , IF = 1 A
J
TJ = 25 °C , IF = 2 A
TJ = 125 °C , IF = 2 A
TJ = 25 °C , IF = 3 A
T
= 125 °C , IF = 3 A
J
14
8
0.37
0.28
0.41
0.34
0.4
50
18
0.42
0.32
0.46
0.39
0.5
0.44
µ
mA
V
V
V
V
V
V
A
3/8
STS4DPFS2LS
Safe Operating Area Thermal Impedance
Output Characteristics
Transfer Characteristics
Static Drain-source On ResistanceTransconductance
4/8
STS4DPFS2LS
Capacitance VariationsGate Charge vs Gate-source Voltage
Normalized Gate Threshold Volta ge vs Temp. Normalized On Resistance vs Temperatur e
Source-drain Diode Forward Characteristics
5/8
STS4DPFS2LS
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
6/8
SO-8 MECHANICAL DATA
STS4DPFS2LS
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A1.750.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033
b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.019
c1 45 (typ.)
D 4.8 5.0 0.188 0.196
E 5.8 6.2 0.228 0.244
e1.27 0.050
e3 3.81 0.150
F 3.8 4.0 0.14 0.157
L 0.4 1.27 0.015 0.050
M0.60.023
S 8 (max.)
mm inch
0016023
7/8
STS4DPFS2LS
8/8
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subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
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