SGS Thomson Microelectronics STS4DPFS20L Datasheet
STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
MOSFET
V
DSS
20 V < 0.08 Ω 4 A
R
DS(on)
STS4DPFS20L
P-CHANNEL 20V - 0.07Ω - 4A SO-8
I
D
SCHOTTKY
I
F(AV )
3 A 30 V 0.51 V
V
RRM
V
F(MAX)
SO-8
DESCRIPTION
This product associates the latest low voltage
STripFET™ in p-channel version to a low drop
INTERNAL SCHEMATIC DIAGRAM
Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and cellular phones.
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
(●)
DM
P
TOT
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ± 16 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
Drain Current (pulsed) 16 A
Total Dissipation at TC = 25°C
20 V
20 V
4A
3.4 A
2W
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
dv/dt
(•)Pu l se width limite d by safe operating area
Repetitive Peak Reverse Voltage 30 V
RMS Forward Current 20 A
Average Forward Current TL = 125°C
Surge Non Repetitive Forward Current tp = 10 ms
Repetitive Peak Reverse Current tp = 2 µs
Non Repetitive Peak Reverse Current
Critical Rate Of Rise Of Reverse Voltage 10000 V/µs
δ = 0.5
Sinusoidal
F = 1 kHz
tp = 100 µs1 A
Note: For the P-CHANNEL MOSFET actual polarity of Voltages
3A
75 A
1A
and current has to be reversed
1/8April 2002
STS4DPFS20L
THERMA L D ATA
Rthj-amb (*)Thermal Resistance Junction-ambient MOSFET 62.5 °C/W
Rthj-amb (*)Thermal Resistance Junction-ambient SCHOTTKY 100 °C/W
T
stg
T
l
MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Storage Temperature Range -55 to 150 °C
Junction Temperature 150 °C
(*) Mounted on FR-4 board (Steady State)
Drain-source
ID = 250 µA, VGS = 0 20 V
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ± 16 V ±100 nA
GS
V
= VGS, ID = 250µA
DS
VGS = 10V, ID = 2 A
VGS = 4.5V, ID = 2 A
1V
0.07 0.08 Ω
0.085 0.10 Ω
1µA
10 µA
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS= 15V, ID=2 A 10 S
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 490 pF
Reverse Transfer
Capacitance
V
= 25V, f = 1 MHz, VGS = 0
DS
1350 pF
130 pF
2/8
STS4DPFS20L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
gs
gd
Turn-on Delay Time
Rise Time 35 ns
Total Gate Charge
g
Gate-Source Charge 5 nC
Gate-Drain Charge 3 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cyc l e 1.5 %.
2. Pulse width li mited by safe operating area.
Source-drain Current 4 A
(2)
Source-drain Current (pulsed) 16 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 36 nC
Reverse Recovery Current 1.6 A
= 15V, ID = 2A RG=4.7Ω
DD
V
= 10V
GS
(see test circuit, Figure 3)
V
= 24V, ID = 4A,
DD
VGS = 4.5 V
VDD = 15 V, ID = 2A,
RG=4.7Ω, V
GS
= 4.5 V
(see test circuit, Figure 3)
ISD = 4 A, VGS = 0
I
= 4 A, di/dt = 100A/µs,
SD
V
= 15 V, Tj = 150°C
DD
(see test circuit, Figure 5)
25 ns
12.5 16 nC
125
30
1.2 V
45 ns
ns
ns
SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*) Reve rsed Leak age Curren t TJ = 25 °C , VR = 30 V
I
R
TJ = 125 °C , VR = 30 V
(*) Forward Voltage Drop TJ = 25 °C , IF = 3 A
V
F
T
= 125 °C , IF = 3 A 0.46
J
0.03
0.2
100
0.51
0.46
mA
mA
V
V
3/8
Loading...