SGS Thomson Microelectronics STS4DPF20L Datasheet
STS4DPF20L
DUAL P-CHANNEL 20V - 0.07 Ω - 4A SO-8
STripFET™ POWER MOSFET
TYPE
STS4DPF20L 20 V <0.08
■ TYPICAL R
■ STANDARD OUTLINE FO R EAS Y
V
DSS
(on) = 0.07 Ω
DS
R
DS(on)
I
D
Ω
4 A
AUTOMATED SURFACE MOUNT ASSEMBLY
■ LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest dev elo pment of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
■ POWER MANAGEMENT IN CELLULAR
PHONES
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
(
I
DM
P
tot
(
Puls e width limit ed by safe opera ti ng are a. Note: F or t he P- CHA NNE L MOS FE T ac tu al po la rity o f v olt ages a nd
•)
.
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ± 16 V
Drain Current (continuos) at TC = 25°C Single Operation
Drain Current (continuos) at T
•)
Drain Current (pulsed) 16 A
Total Dissipation at TC = 25°C Dual Operation
Total Dissipation at T
= 25°C Single Operation
C
= 100°C Single Operation
C
current has to be rever sed
20 V
20 V
4
2.5
1.6
2
A
A
W
W
1/8February 2002
STS4DPF20L
THERMAL DATA
Rthj-amb
T
T
stg
(*)
When Mounted on 0.5 in2 pad of 2 oz.cop per
(*)Thermal Resistance Junction-ambient Single Operation
Thermal Operating Junction-ambient
j
Storage Temperature
Dual Operating
62.5
78
-55 to150
-55 to 150
°C/W
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
V
(BR)DSS
Drain-source
= 250 µA, VGS = 0
D
20 V
Breakdown Voltage
= Max Rating
V
DS
V
= Max Rating TC = 125°C
DS
V
= ± 16 V
GS
1
10
±100 nA
ON
(*)
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
= VGS I
DS
= 10 V ID = 2 A
V
GS
V
= 4.5 V ID = 2 A
GS
= 250 µA
D
1 1.6 2.5 V
0.070
0.085
0.08
0.10
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 15V ID=2 A
DS
= 25V, f = 1 MHz, VGS = 0
V
DS
10 S
1350
490
130
µA
µA
Ω
Ω
pF
pF
pF
2/8
STS4DPF20L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 15 V ID = 2 A
t
d(on)
Turn-on Delay Time
t
r
Rise Time
V
DD
R
= 4.7 Ω VGS = 4.5 V
G
(Resistive Load, Figure 1)
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
= 24V ID= 4A VGS=5V
V
DD
(See test circuit, Figure 2)
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 15 V ID = 2 A
t
d(off)
Turn-off Delay Time
t
f
Fall Time
V
DD
R
= 4.7Ω, V
G
GS
= 4.5 V
(Resistive Load, Figure 1)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by s afe operating area.
Source-drain Current
(•)
Source-drain Current (pulsed)
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
= 4 A VGS = 0
SD
= 4 A di/dt = 100A/µs
I
SD
V
= 15 V Tj = 150°C
DD
(See test circuit, Figure 3)
25
35
12.5
5
3
125
35
45
36
1.6
16 nC
4
16
1.2 V
ns
ns
nC
nC
ns
ns
A
A
ns
nC
A
Safe Operating Area
Thermal Impedance
3/8
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