SGS Thomson Microelectronics STS4DNFS30L Datasheet
STripFET™ II MOSFET PLUS SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
MOSFET
V
DSS
30 V < 0.055 Ω 4 A
R
DS(on)
STS4DNFS30L
N-CHANNEL 30V - 0.044Ω - 4A SO-8
I
D
SCHOTTKY
I
F(AV )
3 A 30 V 0.51 V
V
RRM
V
F(MAX)
SO-8
DESCRIPTION
This product associates the latest low voltage
STripFET™ in n-channel version to a low drop
INTERNAL SCHEMATIC DIAGRAM
Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and cellular phones.
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
(●)
DM
P
TOT
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ± 16 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed) 16 A
Total Dissipation at TC = 25°C
30 V
30 V
4A
2.5 A
2W
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
dv/dt
(•)Pu l se width limite d by safe operating area
Repetitive Peak Reverse Voltage 30 V
RMS Forward Current 20 A
Average Forward Current TL = 125°C
Surge Non Repetitive Forward Current tp = 10 ms
Repetitive Peak Reverse Current tp = 2 µs
Non Repetitive Peak Reverse Current
Critical Rate Of Rise Of Reverse Voltage 10000 V/µs
δ = 0.5
Sinusoidal
F=1 kHz
tp = 100 µs1 A
3A
75 A
1A
1/8July 2002
STS4DNFS30L
THERMA L D ATA
Rthj-amb (*)Thermal Resistance Junction-ambient MOSFET 62.5 °C/W
T
stg
T
l
MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Storage Temperature Range -55 to 150 °C
Junction Temperature -55 to 150 °C
(*) Mounted on FR-4 bo ard (Steady State)
Drain-source
ID = 250 µA, VGS = 0 30 V
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ± 16 V ±100 nA
GS
V
= VGS, ID = 250µA
DS
VGS = 10V, ID = 2 A
VGS = 5V, ID = 2 A
1V
0.044 0.055 Ω
0.051 0.065 Ω
1µA
10 µA
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS = 15 V
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 90 pF
Reverse Transfer
V
DS
Capacitance
= 25V, f = 1 MHz, VGS = 0
=2 A 5 S
, ID
330 pF
40 pF
2/8
STS4DNFS30L
ELECTRICAL CHARACTERISTICS (CONTINUED)
1.
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
gs
gd
Turn-on Delay Time
Rise Time 100 ns
Total Gate Charge
g
Gate-Source Charge 3.6 nC
Gate-Drain Charge 2 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cyc l e 1.5 %.
2. Pulse width li mited by safe operating area.
Source-drain Current 4 A
(2)
Source-drain Current (pulsed) 16 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 25 nC
Reverse Recovery Current 1.4 A
= 15 V, ID = 2 A
DD
R
= 4.7 Ω VGS = 5 V
G
(see test circuit, Figure 1)
V
= 24 V, ID = 4 A,
DD
VGS = 5 V
VDD = 15 V, ID = 2 A,
RG=4.7Ω, V
GS
= 5 V
(see test circuit, Figure 1)
ISD = 4 A, VGS = 0
I
= 4 A, di/dt = 100A/µs,
SD
V
= 15 V, Tj = 150°C
DD
(see test circuit, Figure 3)
11 ns
6.5 9 nC
25
22
1.2 V
35 ns
ns
ns
Safe Operating Area
Thermal Impedance
3/8
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