SGS Thomson Microelectronics STS4DNF30L Datasheet
STS4DNF30L
DUAL N-CHANNEL 30V - 0.039Ω -4ASO-8
STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE
V
DSS
R
DS(on)
I
D
STS4DNF30L 30 V < 0.050 Ω 4A
■ TYPICAL R
■ STANDARD OUTLINE FOR EASY
DS(on)
= 0.039 Ω
AUTOMATED SURFACE MOUNT ASSEMBLY
■ LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor shows
extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a re markable
manufacturing reproducibility.
APPLICATIONS
■ BATTERY MANAGMENT IN NOMADIC
EQUIPMENT
■ POWERMANAGMENT IN CELLULARPHONES
■ DC MOTOR DRIVE
SO-8
INTERNAL SCHEMATIC DIAGR AM
MOSFET ABSOLUTE M AXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
(●)
I
DM
P
TOT
(●)Pulse width limited by safe operating area
August 2002
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
30 V
30 V
Gate- source Voltage ± 16 V
Drain Current (continuous) at TC= 25°C 4 A
Drain Current (continuous) at TC= 100°C 2.5 A
Drain Current (pulsed) 16 A
Total Dissipation at TC= 25°C Dual Operation
.
2W
1/6
STS4DNF30L
THERMAL DATA
Rthj-amb (*)Thermal Resistance Junction-ambient Max 62.5 °C/W
T
stg
T
l
MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Storage Temperature Range -55 to 150 °C
Junction Temperature 150 °C
(*) Mounted on FR-4 board (t≤ 10sec)
Drain-source
ID= 250 µA, VGS= 0 30 V
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
Resistance
V
= Max Rating
DS
= Max Rating, TC= 125 °C
V
DS
V
= ± 16 V ±100 nA
GS
V
DS=VGS,ID
VGS=10V,ID=2A
= 4.5V, ID=2A
V
GS
= 250µA
1V
0.039 0.050 Ω
0.046 0.060 Ω
1µA
10 µA
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS>I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 90 pF
Reverse Transfer
Capacitance
D(on)xRDS(on)max,
ID=2A
V
=25V,f=1MHz,VGS=0
DS
13 S
330 pF
40 pF
2/6
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