Datasheet STS4DNF30L Datasheet (SGS Thomson Microelectronics)

STS4DNF30L

DUAL N-CHANNEL 30V - 0.039Ω -4ASO-8

STripFET™ POWER MOSFET

PRELIMINARY DATA

TYPE

V

DSS

R

DS(on)

I

D

STS4DNF30L 30 V < 0.050 Ω 4A

■ TYPICAL R

■ STANDARD OUTLINE FOR EASY

DS(on)

= 0.039 Ω

AUTOMATED SURFACE MOUNT ASSEMBLY

■ LOW THRESHOLD DRIVE

DESCRIPTION

This Power MOSFET is the second generation of
STMicroelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor shows
extremely high packing density for low on­resistance, rugged avalanche characteristics and
less critical alignment steps therefore a re markable
manufacturing reproducibility.

APPLICATIONS

■ BATTERY MANAGMENT IN NOMADIC

EQUIPMENT

■ POWERMANAGMENT IN CELLULARPHONES

■ DC MOTOR DRIVE

SO-8

INTERNAL SCHEMATIC DIAGR AM

MOSFET ABSOLUTE M AXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

(●)

I

DM

P

TOT

(●)Pulse width limited by safe operating area

August 2002

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)

30 V

30 V
Gate- source Voltage ± 16 V
Drain Current (continuous) at TC= 25°C 4 A
Drain Current (continuous) at TC= 100°C 2.5 A
Drain Current (pulsed) 16 A
Total Dissipation at TC= 25°C Dual Operation

.

2W

1/6

STS4DNF30L

THERMAL DATA

Rthj-amb (*)Thermal Resistance Junction-ambient Max 62.5 °C/W

T

stg

T

l

MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Storage Temperature Range -55 to 150 °C
Junction Temperature 150 °C

(*) Mounted on FR-4 board (t≤ 10sec)

Drain-source

ID= 250 µA, VGS= 0 30 V

Breakdown Voltage
Zero Gate Voltage

Drain Current (V

GS

=0)

Gate-body Leakage
Current (V

DS

=0)

Gate Threshold Voltage
Static Drain-source On

Resistance

V

= Max Rating

DS

= Max Rating, TC= 125 °C

V

DS

V

= ± 16 V ±100 nA

GS

V

DS=VGS,ID

VGS=10V,ID=2A

= 4.5V, ID=2A

V

GS

= 250µA

1V

0.039 0.050 Ω

0.046 0.060 Ω

1µA

10 µA

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS>I

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 90 pF
Reverse Transfer

Capacitance

D(on)xRDS(on)max,

ID=2A

V

=25V,f=1MHz,VGS=0

DS

13 S

330 pF

40 pF

2/6

STS4DNF30L

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time 100 ns
Total Gate Charge

Gate-Source Charge 3.6 nC
Gate-Drain Charge 2 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

t

t

r(Voff)

t
t

f

f

c

Turn-off Delay Time
Fall Time

Off-Voltage Rise Time
Fall Time
Cross-over Time

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safeoperating area.

Source-drain Current 4 A

(2)

Source-drain Current (pulsed) 16 A

(1)

Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 18 nC
Reverse Recovery Current 1.2 A

=15V,ID=2ARG= 4.7Ω

DD

= 4.5 V

V

GS

(see test circuit, Figure 3)
V

=24V,ID=4A,

DD

V

=10V

GS

VDD=15V,ID=2A,
R

=4.7Ω, VGS= 4.5 V

G

(see test circuit, Figure 3)
VDD=24V,ID=4A,

RG=4.7Ω, VGS= 4.5 V
(see test circuit, Figure 5)

ISD= 4 A, VGS=0
I

= 4 A, di/dt = 100A/µs,

SD

VDD=20V,Tj= 150°C
(see test circuit, Figure 5)

11 ns

6.5 9 nC

25
22

22
55
75

1.2 V

30 ns

ns
ns

ns
ns
ns

3/6

STS4DNF30L

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

4/6

0016023

SO-8 MECHANICAL DATA

STS4DNF30L

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A1.750.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033

b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.019
c1 45 (typ.)

D 4.8 5.0 0.188 0.196

E 5.8 6.2 0.228 0.244

e1.27 0.050
e3 3.81 0.150

F 3.8 4.0 0.14 0.157

L 0.4 1.27 0.015 0.050

M0.60.023

S 8 (max.)

mm inch

5/6

STS4DNF30L

6/6

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation n or for an y infring em ent of patent s or other rights o f third part ies which may result from its use . No l i cen se i s
granted by implication or otherwise under any patent or patent rights of STMicroelectroni cs. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.

Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -

The ST logo is a trademark of STMicroelectronics

© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved

STMicroelectronics GROUP OF COMPANIES

Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.

http://www.st.com