SGS Thomson Microelectronics STS3DPFS45 Datasheet

STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS MOSFET

SCHOTTKY

V

DSS

45 V < 0.11

I

F(AV )

3 A 45 V 0.51 V

R

DS(on)

V

RRM

STS3DPFS45

P-CHANNEL 45V - 0.080 Ω - 3A SO-8

I

D

Ω

3 A

V

F(MAX)

DESCRIPTION

SO-8

This product associates the latest low voltage

StripFETœ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC

INTERNAL SCHEMATIC DIAGRAM

converters for printers, portable equipment, and cellular phones.

MOSFET ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DGR

V

I I

I

DM

P

Dain-source Voltage (VGS = 0)

DS

Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage ± 16 V

GS

Drain Current (continuos) at TC = 25°C

D

Drain Current (continuos) at TC = 100°C

D

(

•)

Drain Current (pulsed) 12 A Total Dissipation at TC = 25°C

tot

45 V 45 V

3A

1.9 A

2W

SCHOTTKY ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

RRM

I

RSM

dv/dt

(•) Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed

Repetitive Peak Reverse Voltage 45 V RMS Forward Curren 20 A

=125 oC

T

Average Forward Current

Surge Non Repetitive Forward Current

Repetitive Peak Reverse Current Non Repetitive Peak Reverse Current tp=100 µs1 A

Critical Rate Of Rise Of Reverse Voltage 10000 V/µs

L

=0.5

δ

tp= 10 ms Sinusoidal

tp=2 µs F=1 kHz

3A

75 A

1A

1/8February 2002

.

STS3DPFS45

TERMAL DATA

Rthj-amb Rthj-amb

T

stg

T

(*) Mounted on Fr-4 board (Steady State)

Thermal Resistance Junction-ambient MOSFET Thermal Resistance Junction-ambient SCHOTTKY Storage Temperature Range Maximum Lead Temperature For Soldering Purpose

j

MAX

62.5 100

-65 to 150 150

o

C/W

o

C/W

o

C

o

C

ELECTRICAL CHARACTERISTICS (T

= 25 °C unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 250 µA, VGS = 0

I

D

V

= Max Rating

DS

V

= Max Rating TC = 125°C

DS

= ± 16 V

V

GS

45 V

1

10

±100 nA

ON

V

(BR)DSS

I

DSS

I

GSS

(1)

Drain-source Breakdown Voltage

Zero Gate Voltage Drain Current (V

GS

Gate-body Leakage Current (V

DS

= 0)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage Static Drain-source On

Resistance On State Drain Current

= VGS ID = 250 µA

DS

V

= 10 V ID = 1.5 A

GS

V

= 10 V

GS

234V

0.080 0.11

3A

SCHOTTCKY STATIC ELECTRICAL CHARACTERISTICS

Symbol Parameter Test Conditions Min. Typ. Max. Unit

T

= 25 oC VR= 45 V

(*)

I

R

(*)

V

F

Reversed Leakage Curren t

Forward Voltage drop

J

= 125 oC VR= 45 V

T

J

T

= 25 oC IF= 3 A

J

= 125 oC IF= 3 A

T

J

0.03

0.42

0.2

100

0.51

0.46

µA µA

Ω

mA mA

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(*)

g

fs

C

iss

C

oss

C

rss

2/8

Forward Transconductance Input Capacitance

Output Capacitance Reverse Transfer Capacitance

V

DS>ID(on)xRDS(on)max ID

= 25V, f = 1 MHz, VGS = 0

V

DS

=1.5A

4S

1190

200

56

pF pF pF

STS3DPFS45

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 20 V ID = 1.5 A

t

d(on)

t

Turn-on Delay Time

r

Rise Time

V

DD

R

= 4.7 Ω VGS = 10 V

G

(Resistive Load, Figure 3)

Q

g

Q

gs

Q

gd

Total Gate Charge Gate-Source Charge Gate-Drain Charge

= 20V ID= 3A VGS=10V

V

DD

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 20 V ID = 1.5 A

t

d(off)

t

Turn-off Delay Time

f

Fall Time

V

DD

R

= 4.7Ω, V

G

GS

(Resistive Load, Figure 3)

= 10 V

20 25

24.5 4

5.5

100

22

33 nC

ns ns

nC nC

ns ns

t

d(off)

t

Turn-off Delay Time

f

c

Fall Time Cross-over Time

= 32 V ID = 3 A

V

clamp

R

= 4.7Ω, V

G

GS

= 10 V

95 11 35

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

(*)

Pulsed: P ul se duration = 300 µs, dut y cycle 1.5 %.

(

•)Pulse width limited by s afe operating area.

Safe Operating Area

Source-drain Current

(•)

Source-drain Current (pulsed)

(*)

Forward On Voltage Reverse Recovery Time

Reverse Recovery Charge Reverse Recovery Current

I

= 3 A VGS = 0

SD

= 3 A di/dt = 100A/µs

I

SD

V

= 15 V Tj = 150°C

DD

(see test circuit, Figure 5)

Thermal Impedance

3

12

2V

40 85

3.8

ns ns ns

A A

ns

nC

A

3/8