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STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
MOSFET
SCHOTTKY
V
DSS
45 V < 0.11
I
F(AV )
3 A 45 V 0.51 V
R
DS(on)
V
RRM
STS3DPFS45
P-CHANNEL 45V - 0.080 Ω - 3A SO-8
I
D
Ω
3 A
V
F(MAX)
DESCRIPTION
SO-8
This product associates the latest low voltage
StripFETœ in p-channel version to a low drop
Schottky diode. Such configuration is extremely
versatile in implementing, a large variety of DC-DC
INTERNAL SCHEMATIC DIAGRAM
converters for printers, portable equipment, and
cellular phones.
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
DGR
V
I
I
I
DM
P
Dain-source Voltage (VGS = 0)
DS
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ± 16 V
GS
Drain Current (continuos) at TC = 25°C
D
Drain Current (continuos) at TC = 100°C
D
(
•)
Drain Current (pulsed) 12 A
Total Dissipation at TC = 25°C
tot
45 V
45 V
3A
1.9 A
2W
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
dv/dt
(•) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
Repetitive Peak Reverse Voltage 45 V
RMS Forward Curren 20 A
=125 oC
T
Average Forward Current
Surge Non Repetitive Forward Current
Repetitive Peak Reverse Current
Non Repetitive Peak Reverse Current tp=100 µs1 A
Critical Rate Of Rise Of Reverse Voltage 10000 V/µs
L
=0.5
δ
tp= 10 ms
Sinusoidal
tp=2 µs
F=1 kHz
3A
75 A
1A
1/8February 2002
.
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STS3DPFS45
TERMAL DATA
Rthj-amb
Rthj-amb
T
stg
T
(*) Mounted on Fr-4 board (Steady State)
Thermal Resistance Junction-ambient MOSFET
Thermal Resistance Junction-ambient SCHOTTKY
Storage Temperature Range
Maximum Lead Temperature For Soldering Purpose
j
MAX
62.5
100
-65 to 150
150
o
C/W
o
C/W
o
C
o
C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 250 µA, VGS = 0
I
D
V
= Max Rating
DS
V
= Max Rating TC = 125°C
DS
= ± 16 V
V
GS
45 V
1
10
±100 nA
ON
V
(BR)DSS
I
DSS
I
GSS
(1)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
= VGS ID = 250 µA
DS
V
= 10 V ID = 1.5 A
GS
V
= 10 V
GS
234V
0.080 0.11
3A
SCHOTTCKY STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
T
= 25 oC VR= 45 V
(*)
I
R
(*)
V
F
Reversed Leakage Curren t
Forward Voltage drop
J
= 125 oC VR= 45 V
T
J
T
= 25 oC IF= 3 A
J
= 125 oC IF= 3 A
T
J
0.03
0.42
0.2
100
0.51
0.46
µA
µA
Ω
mA
mA
mA
mA
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
2/8
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS>ID(on)xRDS(on)max ID
= 25V, f = 1 MHz, VGS = 0
V
DS
=1.5A
4S
1190
200
56
pF
pF
pF
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STS3DPFS45
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 20 V ID = 1.5 A
t
d(on)
t
Turn-on Delay Time
r
Rise Time
V
DD
R
= 4.7 Ω VGS = 10 V
G
(Resistive Load, Figure 3)
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
= 20V ID= 3A VGS=10V
V
DD
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 20 V ID = 1.5 A
t
d(off)
t
Turn-off Delay Time
f
Fall Time
V
DD
R
= 4.7Ω, V
G
GS
(Resistive Load, Figure 3)
= 10 V
20
25
24.5
4
5.5
100
22
33 nC
ns
ns
nC
nC
ns
ns
t
d(off)
t
t
Turn-off Delay Time
f
c
Fall Time
Cross-over Time
= 32 V ID = 3 A
V
clamp
R
= 4.7Ω, V
G
GS
= 10 V
95
11
35
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: P ul se duration = 300 µs, dut y cycle 1.5 %.
(
•)Pulse width limited by s afe operating area.
Safe Operating Area
Source-drain Current
(•)
Source-drain Current (pulsed)
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
= 3 A VGS = 0
SD
= 3 A di/dt = 100A/µs
I
SD
V
= 15 V Tj = 150°C
DD
(see test circuit, Figure 5)
Thermal Impedance
3
12
2V
40
85
3.8
ns
ns
ns
A
A
ns
nC
A
3/8