®
STS3DPFS30L
STripFET
MAIN PRODUCT CHARACTERISTICS
MOSFET
SCHOTTKY
DESCRIPTION:
This product associates the latest low voltage
StripFET
Schottky diode. Such configuration is extremely
versatile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and
cellular phones.
MOSFET ABSOLUTE MAXIMUM RATINGS
in p-channel version to a low drop
MOSFET PLUS SCHOTTKY RECTIFIER
V
DSS
30V <0.16Ω 3A
I
F(AV)
3A 30V 0.51V
R
DS(on)
V
RRM
V
F(MAX)
I
D
P - CHANNEL 30V - 0.13Ω - 3A S0-8
PRELIMINARY DATA
SO-8
INTERNAL SCHEMATIC DIAGRAM
Symbol Parameter Value Unit
V
V
V
I
DM
P
Drain-source Voltage (VGS = 0) 30 V
DS
Drain- gate Voltage (RGS = 20 kΩ)30V
DGR
Gate-source Voltage ± 20 V
GS
I
Drain Current (continuous) at Tc = 25 oC3A
D
I
Drain Current (continuous) at Tc = 100 oC 1.9 A
D
(•) Drain Current (pulsed) 12 A
Total Dissipation at Tc = 25 oC2W
tot
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
FSM
I
RSM
dv/dt Critical Rate Of Rise Of Reverse Voltage 10000 V/µs
(•) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
Repetitive Peak Reverse Voltage 30 V
RRM
RMS Forward Current 20 A
Average Forward Current TL=125 oC
δ =0.5
Surge Non Repetitive Forward Current tp= 10 ms
Sinusoidal
Non Repetitive Peak Reverse Current tp=100 µs1 A
3A
75 A
May 2000
1/5
STS3DPFS30L
THERMAL DATA
R
thj-amb
R
thj-amb
T
T
(*)Thermal Resistance Junction-ambient MOSFET S.O.
Dual Operating
(*) Thermal Resistance Junction-ambientSCHOTTKY
Storage Temperature Range Maximum
stg
Junction Temperature
j
(*)
mounted on FR-4 board (steady state )
78
62
100
-65 to 150
150
o
C/W
o
C/W
o
C/W
o
o
C
C
MOSFET ELECTRICAL CHARACTERISTICS
= 25 oC unless otherwise specified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID = 250 µA V
= 0 30 V
GS
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 125 oC
DS
= ± 16 V ± 1 µA
V
GS
1
10
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage V
Static Drain-source On
Resistance
On State Drain Current VDS > I
= VGS ID = 250 µA 1 2.5 V
DS
VGS = 10V ID = 1.5 A
V
= 4.5V ID = 1.5 A
GS
x R
V
GS
D(on)
= 10 V
DS(on)max
0.13
0.15
0.16
0.19
3A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID =1.5 A 3.5 S
= 0 510
GS
170
55
µA
µA
Ω
Ω
pF
pF
pF
2/5
STS3DPFS30L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Delay Time
Rise Time
t
r
VDD = 15 V ID = 1.5 A
R
= 4.7 Ω V
G
GS
= 4.5 V
(Resistive Load, see fig. 3)
Q
Q
Q
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
V
= 15 V ID = 3 A V
DD
= 4.5 V 5.5
GS
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off Delay Time
Fall Time
t
r
VDD = 15 V ID = 1.5 A
R
= 4.7 Ω V
G
GS
= 4.5 V
(Resistive Load, see fig. 3)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Source-drain Current
(•)
Source-drain Current
(pulsed)
(∗) Forward On Voltage ISD = 3 A VGS = 0 2 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
I
= 3 A di/dt = 100 A/µs
SD
V
= 15V Tj = 150 oC
DD
(see test circuit, figure 5)
Charge
Reverse Recovery
Current
15
37
7.5 nC
1.7
1.8
15
29
3
12
18
12
1.33
ns
ns
nC
nC
ns
ns
A
A
ns
nC
Α
SCHOTTCKY STATIC ELET TRICAL CHARAC TERI STICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(∗) Reversed Leakage
I
R
Current
VF(∗) Forward Voltage drop TJ= 25 oC IF=3A
TJ= 25 oC VR=30V
T
= 125 oC VR=30V 0.03
J
T
= 125 oC IF=3A 0.38
J
0.2
100
0.51
0.46
mA
mA
V
V
3/5
STS3DPFS30L
SO-8 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A1.750.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033
b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.019
c1 45 (typ.)
D 4.8 5.0 0.188 0.196
E 5.8 6.2 0.228 0.244
e1.27 0.050
e3 3.81 0.150
F 3.8 4.0 0.14 0.157
L 0.4 1.27 0.015 0.050
M0.60.023
S 8 (max.)
mm inch
4/5
0016023
STS3DPFS30L
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of use of such inform ation nor for any in fringe ment o f patents or other rig hts of third par ties wh ich may result from its u se. N o li cen se is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized f or use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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