SGS Thomson Microelectronics STS3DPFS30 Datasheet
®
STS3DPFS30
STripFET
MAIN PRODUCT CHARACTERISTICS
MOSFET
SCHOTTKY
DESCRIPTION:
This product associates the latest low voltage
StripFET
Schottky diode. Such configuration is extremely
versatile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and
cellular phones.
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
in p-channel version to a low drop
V
V
V
I
DM
P
Drain-source Voltage (VGS = 0) 30 V
DS
Drain- gate Voltage (RGS = 20 kΩ)30V
DGR
Gate-source Voltage ± 20 V
GS
I
Drain Current (continuous) at Tc = 25 oC3A
D
I
Drain Current (continuous) at Tc = 100 oC 1.9 A
D
(•) Drain Current (pulsed) 12 A
Total Dissipation at Tc = 25 oC2W
tot
MOSFET PLUS SCHOTTKY RECTIFIER
V
DSS
30V 0.09Ω 3A
I
F(AV)
3A 30V 0.51V
R
DS(on)
V
RRM
V
F(MAX)
PRELIMINARY DATA
I
D
SO-8
INTERNAL SCHEMATIC DIAGRAM
P - CHANNEL 30V - 0.065Ω - 3A - S0-8
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
dv/dt Critical Rate Of Rise Of Reverse Voltage 10000 V/µs
(•) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
February 1999
Repetitive Peak Reverse Voltage 30 V
RRM
RMS Forward Current 20 A
Average Forward Current TL=125 oC
δ =0.5
Surge Non Repetitive Forward Current tp= 10 ms
Sinusoidal
Repetitive Peak Reverse Current tp=2 µs
F=1 kHz
Non Repetitive Peak Reverse Current tp=100 µs1 A
3A
75 A
1A
1/5
STS3DPFS30
THERMAL DATA
R
thj-amb
R
thj-amb
T
T
(*) Thermal Resistance Junction-ambient MOSFET
(*) Thermal Resistance Junction-ambientSCHOTTKY
Storage Temperature Range Maximum
stg
Junction Temperature
j
(*)
mounted on FR-4 board (steady state )
85
100
-65 to 150
150
o
C/W
o
C/W
o
o
C
C
MOSFET ELECTRICAL CHARACTERISTICS
= 25 oC unless otherwise specified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID = 250 µA V
= 0 30 V
GS
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 125 oC
DS
= ± 20 V ± 100 nA
V
GS
1
10
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage V
Static Drain-source On
= VGS ID = 250 µA234V
DS
VGS = 10V ID = 1.5 A 0.065 0.09 Ω
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
3A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID =1.5 A 5 S
= 0 1600
GS
500
125
µA
µA
pF
pF
pF
2/5
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