SGS Thomson Microelectronics STS3DPF30L Datasheet
®
DUAL P - CHANNEL 30V - 0.145Ω - 3A SO-8
TYPE V
STS3DPF30L 30 V < 0.16 Ω 3 A
■
TYPICAL R
■
STANDARD OUTLINE FOR EASY
DS(on)
DSS
= 0.145
AUTOMATED SURF ACE MOUNT ASSEMBLY
■
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique "Single Feature Size
" strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■
BATTERY MANAGM ENT IN NOMADI C
EQUIPMENT
■
POWER MANAGM EN T IN CELLULAR
PHONES
■
DC-DC CONVERTER
Ω
R
DS(on)
I
D
STS3DPF30L
STripFET POWER MOSFET
PRELIMINARY DATA
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
(•) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
May 2000
Drain-source Voltage (VGS = 0) 30 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage ± 20 V
GS
I
Drain Current (continuous) at Tc = 25 oC
D
Single Operation
Drain Current (continuous) at T
Single Operation
(•) Drain Current (pulsed) 12 A
Total Dissipation at Tc = 25 oC Dual Operation
tot
Total Dissipation at T
= 25 oC Single Operation
c
= 100 oC
c
30 V
3
1.9
2
1.6
A
A
W
W
1/5
STS3DPF30L
THERMAL DATA
R
thj-amb
T
T
*Thermal Resistance Junction-ambient Single Operation
Dual Operation
Maximum Operating Junction Temperature
j
Storage Temperature
stg
78
62.5
150
-55 to 150
o
C/W
o
C/W
o
o
C
C
(*)
Mounted on FR-4 board (t
ELECTRICAL CHARACTERISTICS
≤ 10sec)
(T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
30 V
Breakdown Voltage
I
I
ON (∗
DSS
GSS
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
)
DS
= 0)
GS
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 125 oC
DS
V
= ± 20 V
GS
1
10
± 100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
R
I
GS(th)
DS(on)
D(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
V
= VGS ID = 250 µA
DS
VGS = 10 V ID = 1.5 A
V
= 4.5 V ID = 1.5 A
GS
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
1 1.6 2.5 V
0.145
0.18
3A
0.16
0.19
DYNAMIC
µA
µA
Ω
Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
VDS > I
D(on)
x R
DS(on)max
ID = 3 A 3 S
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
V
= 25 V f = 1 MHz V
DS
= 0 V 510
GS
170
55
Capacitance
2/5
pF
pF
pF
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