SGS Thomson Microelectronics STS3DNF30L Datasheet
®
N - CHANNEL 30V - 0.055Ω - 3.5A - SO-8
TYPE V
STS3DNF30L 30 V < 0.065 Ω 3.5 A
■
TYPICAL R
■
STANDARD OUTLINE FOR EASY
DS(on)
DSS
= 0.055
AUTOMATED SURFAC MOUNT AS SEM BLY
■
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique "Single Feature
Size" strip-based process. The resulting transistor shows extremely high packing density for
low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility.
Ω
R
DS(on)
I
D
STS3DNF30L
PowerMESH MOSFET
PRELIMINARY DATA
SO-8
APPLICATIONS
■
DC MOTOR DR IVE
■
DC-DC CONVERTERS
■
BATTERY MANAGEMENT IN NOMADIC
INTERNAL SCHEMATIC DIAGRAM
EQUIPMENT
■
POWER MANAGEMENT IN
PORTABLE/DESKTOP PC
S
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
(•) Pulse width limited by safe operating area
Drain-source Voltage (VGS = 0) 30 V
DS
Drain- gate Voltage (RGS = 20 kΩ)30V
DGR
Gate-source Voltage ± 20 V
GS
I
Drain Current (continuous) at Tc = 25 oC
D
Single Operation
Drain Current (continuous) at T
Single Operation
(•) Drain Current (pulsed) 14 A
Total Dissipation at Tc = 25 oC Dual Operation
tot
Total Dissipation at T
= 25 oC Single Operation
c
= 100 oC
c
3.5
2.2
2
1.6
A
A
W
W
December 1998
1/5
STS3DNF30L
THERMAL DATA
R
thj-amb
T
T
(*) Mounted on FR-4 board (t ≤ 10 sec)
*Thermal Resistance Junction-ambient Singe Operation Max
Thermal Resistance Junction-ambient Dual Operation Max
Maximum Lead Temperature For Soldering Purpose
J
Storage Temperature
stg
78
62.5
150
-55 to 150
o
C/W
o
C/W
o
o
C
C
ELECTRICAL CHARACTERISTICS
= 25 oC unless otherwise specified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID = 250 µA V
= 0 30 V
GS
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-Source Leakage
Current (V
DS
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 125 oC
DS
= ± 20 V ±100 nA
V
GS
1
10
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage V
Static Drain-source On
Resistance
= V
DS
VGS = 10 V ID = 1.75 A
V
= 4.5 V ID = 1.75 A
GS
On State Drain Current VDS > I
V
= 10 V
GS
GS ID
D(on)
x R
DS(on)max
= 250 µA 1 1.7 2.5 V
0.055
0.06
0.065
0.09
3.5 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 6 A 6 S
= 0 420
GS
62
20
550
80
30
µA
µA
Ω
Ω
pF
pF
pF
2/5
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