SGS Thomson Microelectronics STS3C3F30L Datasheet

TYPE

STS3C3F30L(N-Channel) STS3C3F30L(P-Channel)

■ TYPICAL R

■ STANDARD OUTLI NE FO R EASY

(on) (N-Channel) = 50 mΩ

DS

(on) (P-Channel) = 140 mΩ

DS

V

30 V 30 V

DSS

R

DS(on)

< 65 m

< 165 m

Ω

AUTOMATED SURFACE MOUNT ASSEMBLY

■ LOW THRESHOLD DRIVE

STS3C3F30L

N-CHANNEL 30V - 0.050 Ω - 3.5A SO-8

P-CHANNEL 30V - 0.140 Ω - 3A SO-8

STripFET™ II POWER MOSFET

I

D

3.5 A 3 A

DESCRIPTION

SO-8

This application speci fic Power MOSFET is the second generation of STMicro electronis unique "Single Feature

Size™" strip-based process. The resulting transistor shows ext remely high packing densi ty for low on-resistance, rugge d avalan che cha racteristics and less criti cal alignment steps therefore a remarkable manufacturing re-

INTERNAL SCHEMATIC DIAGRAM

producibility.

APPLICATIONS

■ DC/DC CONVERTERS

■ BATTERY MANAGEMENT IN NOMADIC

EQUIPMENT

■ POWER MANAGEMENT IN CELLULAR

PHONES

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter N-CHANNEL P-CHANNEL Unit

V

DS

V

DGR

V

GS

I

D

I

D

I

(

DM

P

tot

T

stg

T

j

(

Pulse width limited by safe operating area. Note: P-CHANNEL MOSFET actual polarity of voltages and current

•)

.

Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ)

30 V

30 V Gate- source Voltage ± 16 V Drain Current (continuos) at TC = 25°C

Single Operating Drain Current (continuos) at TC = 100°C

Single Operating

•)

Drain Current (pulsed) 14 11 A Total Dissipation at TC = 25°C Dual Operating

Total Dissipation at T

= 25°C Single Operating

C

3.5 2.7 A

2.2 1.7 A

1.6 2

Storage Temperature -60 to 150 °C Max. Operating Junction Temperature 150 °C

has to be reversed

W W

1/10February 2002

STS3C3F30L

THERMA L D ATA

Rthj-amb(1)

T

Thermal Resistance Junction-ambient Single Operation Maximum Lead Temperature For Soldering Purpose

l

Dual Operating

62.5 78

300

°C/W °C/W

°C

(1) when mounted on 0.5 in

ELECTRICAL CHARACTERISTICS (T

2

pad of 2 oz. copper

= 25 °C unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

V

(BR)DSS

Drain-source

= 250 µA, VGS = 0

D

30

Breakdown Voltage

V

I

DSS

I

GSS

Zero Gate Voltage Drain Current (V

GS

Gate-body Leakage Current (V

DS

= 0)

= Max Rating

DS

V

= Max Rating TC = 125°C

DS

= ± 16 V

V

GS

1

10

±100 nA

ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage

Static Drain-source On Resistance

= VGS I

DS

= 10 V ID = 1.75 A

V

GS

V

= 10 V ID = 1.5 A

GS

V

= 4.5 V ID = 1.75 A

GS

V

= 4.5 V ID = 1.5 A

GS

= 250 µA

D

n-ch p-ch11

n-ch p-ch n-ch p-ch

50

140

60

160

65

165

90

200

m m m m

V

µA µA

V V

Ω Ω Ω Ω

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(*)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance VDS = 15 V ID= 1.75 A

V

= 15 V ID= 1.5 A

DS

Input Capacitance

V

Output Capacitance

= 25V, f = 1 MHz, VGS = 0

DS

Reverse Transfer Capacitance

n-ch p-ch

5.5 4

320 420

90 95

40 30

S S

pF pF

2/10

STS3C3F30L

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

N-CHANNEL

= 15 V ID = 1.75 A

V

t

d(on)

Turn-on Delay Time

R

DD

G

= 4.7

Ω

VGS = 4.5 V

P-CHANNEL

t

r

Rise Time

V

= 15 V ID = 1.5 A

DD

R

G

= 4.7

Ω

VGS = 4.5 V

(Resistive Load, Figure 1)

N-CHANNEL

Qg

Q Q

Total Gate Charge

gs

gd

Gate-Source Charge Gate-Drain Charge

VDD=24V ID=3.5A

=4.5V

V

GS

P-CHANNEL

V

= 24V ID = 3A VGS = 4.5V

DD

(see test circuit, Figure 2)

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

N-CHANNEL

= 15 V ID = 1.75 A

V

t

d(off)

Turn-off Delay Time

R

DD

G

= 4.7

Ω

VGS = 4.5 V

P-CHANNEL

t

f

Fall Time

V

= 15 V ID = 1.5 A

DD

R

G

= 4.7

Ω

VGS = 4.5 V

(Resistive Load, Figure 1)

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

n-ch p-ch

n-ch p-ch n-ch p-ch

n-ch p-ch

27

14.5 40

37

8.5

4.8 2

1.7 4 2

30 90

20 23

12

7

ns ns

nC nC

nC nC nC nC

ns ns

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

(

Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.

∗)

(

Pulse widt h l i m i ted by safe operating area.

•)

Source-drain Current

(

•)

Source-drain Current (pulsed)

(

∗)

Forward On Voltage

Reverse Recovery Time

Reverse Recovery Charge Reverse Recovery Current

I

= 3.5 A VGS = 0

SD

I

= 3 A VGS = 0

SD

N-CHANNEL

ISD = 3.5 A di/dt = 100A/µs

=15 VTj =150 oC

V

DD

P-CHANNEL

= 3 A di/dt = 100A/µs

I

SD

=15 VTj =150 oC

V

DD

(see test circuit, Figure 3)

n-ch p-ch n-ch p-ch

n-ch p-ch

n-ch p-ch n-ch p-ch

28 35

18 25

1.3

1.5

3.5 3

14 12

1.2

A A A

A V

V

ns ns

nC nC

A A

3/10