STS2DPFS20V
P-CHANNEL 20V - 0.14 Ω - 2.5A SO-8
2.7V-DRIVE STripFET™ II MOSFET PLUS SCHOTTKY DIODE
MAIN PRODUCT CHARACTERISTICS
MOSFET
SCHOTTKY
V
DSS
20 V
I
F(AV)
3 A 30 V 0.51 V
R
DS(on)
< 0.20Ω (@4.5V)
< 0.25Ω (@2.7V)
V
RRM
DESCRIPTION
This product associates the latest low voltage
StripFETœ in p-channel version to a low drop
Schottky diode. Such configuration is extremely
versatile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and
cellular phones.
2.5 A
V
F(MAX)
I
D
SO-8
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
I
V
DM
V
DGR
V
I
I
P
Dain-source Voltage (VGS = 0)
DS
Drain-gate Voltage (RGS = 20 kW)
Gate- source Voltage ± 12 V
GS
Drain Current (continuous) at TC = 25°C
D
Drain Current (continuous) at TC = 100°C
D
(•)
Drain Current (pulsed) 10 A
Total Dissipation at TC = 25°C
tot
20 V
20 V
2.5 A
1.58 A
2W
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RSM
dv/dt Critical Rate Of Rise Of Reverse Voltage 10000 V/µs
(•) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
.
Repetitive Peak Reverse Voltage 30 V
RMS Forward Curren 20 A
=125 oC
T
Average Forward Current
Surge Non Repetitive Forward Current
Non Repetitive Peak Reverse Current tp=100 µs1 A
L
δ =0.5
tp= 10 ms
Sinusoidal
3A
75 A
1/8November 2002
STS2DPFS20V
TERMAL DATA
Rthj-amb
Rthj-amb
T
stg
T
(*)
When M ounted on 1 in ch
(*)
Thermal Resistance Junction-ambient MOSFET
(*)
Thermal Resistance Junction-ambient SCHOTTKY
Storage Temperature Range
Maximum Lead Temperature For Soldering Purpose
j
2
FR-4 board, 2 oz of Cu and t [ 10 sec
MAX
62.5
100
-55 to 150
150
o
C/W
o
C/W
o
C
o
C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 250 µA, VGS = 0
I
D
= Max Rating
V
DS
V
= Max Rating TC = 125°C
DS
V
= ± 12 V
GS
20 V
1
10
±100 nA
ON
V
(BR)DSS
I
DSS
I
GSS
(1)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
V
= VGS ID = 250 µA
DS
= 4.5 V ID = 1 A
V
GS
VGS = 2.7 V ID = 1 A
0.6 V
0.14
0.20
0.20
0.25
SCHOTTCKY STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
T
= 25 oC VR= 30 V
(*)
I
R
(*)
V
F
Reversed Leakage Curren t
Forward Voltage drop
J
= 125 oC VR= 30 V
T
J
T
= 25 oC IF= 3 A
J
= 125 oC IF= 3 A
T
J
30
0.40
0.2
100
0.51
0.46
µA
µA
Ω
Ω
mA
mA
mA
mA
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
2/8
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 15 V ID=1 A
DS
= 15V, f = 1 MHz, VGS = 0
V
DS
4S
315
87
17
pF
pF
pF
STS2DPFS20V
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 10 V ID = 1 A
t
d(on)
t
Turn-on Delay Time
r
Rise Time
V
DD
RG= 4.7 Ω VGS = 4.5 V
(Resistive Load, Figure 3)
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
= 10V ID= 2A VGS=4.5V
V
DD
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 10 V ID = 1 A
t
d(off)
t
Turn-off Delay Time
f
Fall Time
V
DD
RG= 4.7Ω, V
GS
= 4.5 V
(Resistive Load, Figure 3)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by s afe operating area.
Source-drain Current
)
Source-drain Current (pulsed)
(•
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
= 2 A VGS = 0
SD
= 2 A di/dt = 100A/µs
I
SD
V
= 10 V Tj = 150°C
DD
(see test circuit, Figure 5)
38
30
3.5
0.34
0.8
45
11
15
7.5
1
4.7 nC
2
10
1.2 V
ns
ns
nC
nC
ns
ns
A
A
ns
nC
A
Safe Operating Area
Thermal Impedance
3/8
STS2DPFS20V
Output Characteristics Transfer Characteristics
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
4/8
STS2DPFS20V
Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature.
. .
5/8
STS2DPFS20V
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
6/8
SO-8 MECHANICAL DATA
STS2DPFS20V
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A1.750.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033
b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.019
c1 45 (typ.)
D 4.8 5.0 0.188 0.196
E 5.8 6.2 0.228 0.244
e1.27 0.050
e3 3.81 0.150
F 3.8 4.0 0.14 0.157
L 0.4 1.27 0.015 0.050
M0.60.023
S 8 (max.)
mm inch
0016023
7/8
STS2DPFS20V
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or o therwise under any patent or patent rights of STMicroelectron i cs. Speci fications mentioned i n this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as c ri t i cal components in life support dev i ces or systems wi thout exp ress written approval of STMicroel ectronics.
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