Datasheet STS2DPF20V Datasheet (SGS Thomson Microelectronics)

STS2DPF20V

DUAL P-CHANNEL 20V - 0.14Ω - 2A SO-8

2.7V-DRIVE STripFET™ II POWER MOSFET

PRELIMINARY DATA

TYPE

V

DSS

STS2DPF20V 20 V

■ TYPICAL R

■ TYPICAL R

■ ULTRA LOW THRESHOLD GATE DRIVE (2.7V)

■ STANDARD OUTLINE FO R EASY

(on) = 0.14Ω (@4.5V)

DS

(on) = 0.2Ω (@2.7V)

DS

R

DS(on)

<0.20Ω (@4.5V)
<0.25Ω (@2.7V)

I

2 A

D

AUTOMATED SURFACE MOUNT ASSEMBLY

DESCRIPTION

This Power MOSFET is the second generation of

STMicroelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor shows
extremely high packing density for low on­resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable
manufacturing reproducibility.

APPLICATIONS

■ BATTERY MANAGMENT IN NOMAD IC

EQUIPMENT

■ POWER MANAGMENT IN CELLULAR PHONES

SO-8

INTERNAL SCHEMATIC DIAGRAM

MOSFET ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

(●)

DM

P

TOT

(●)Pulse width limited by safe operating are a

August 2001

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

20 V
20 V

Gate- source Voltage ± 12 V

Drain Current (continuos) at TC = 25°C Single Operation
Drain Current (continuos) at TC = 100°C Single Operation

2

1.26

Drain Current (pulsed) 8 A
Total Dissipation at TC = 25°C Dual Operation

Total Dissipation at TC = 25°C Single Operation

.

Note: For the P-CHANNEL MOSFET actual polarity of Voltages

1.6
2

and current has to be reversed

A
A

W
W

1/6

STS2DPF20V

THERMA L D ATA

Rthj-amb (*)Thermal Resistance Junction-ambient Single Operation

Dual Operation

T

stg

T

j

Storage Temperature -55 to 150 °C
Junction-ambient Temperature -55 to 150 °C

(*) When Mounted on 0.5 in² of 2 oz. Copper

MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID = 250 µA, VGS = 0 20 V

Breakdown Voltage

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

V

= Max Rating

DS

V

= Max Rating, TC = 125 °C

DS

V

= ± 12 V ±100 nA

GS

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

Resistance

= VGS, ID = 250µA

DS

VGS = 4.5 V, ID = 1 A
VGS = 2.7 V, ID = 1 A

62.5
78

°C/W
°C/W

1µA

10 µA

0.6 V

0.14 0.20 Ω

0.20 0.25 Ω

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS = 15 V, ID= 1.5 A 4.5 S

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 87 pF
Reverse Transfer

Capacitance

V

= 15V, f = 1 MHz, VGS = 0

DS

315 pF

17 pF

2/6

STS2DPF20V

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

gs
gd

Turn-on Delay Time
Rise Time 30 ns
Total Gate Charge

g

Gate-Source Charge 0.34 nC
Gate-Drain Charge 0.8 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

t

f

Turn-off Delay Time
Fall Time

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pu l se duration = 300 µs, duty c yc l e 1.5 %.

2. Pulse width li mited by safe operating area.

Source-drain Current 2 A

(2)

Source-drain Current (pulsed) 8 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge 7.5 nC
Reverse Recovery Current 1 A

= 10 V, ID = 1.5A

DD

R

= 4.7Ω VGS = 4.5V

G

(see test circuit, Figure 1)
V

= 10V, ID = 2 A,

DD

VGS = 4.5 V
(see test circuit, Figure 2)

VDD = 10 V, ID = 1 A,
RG=4.7Ω, V

GS

= 4.5 V

(see test circuit, Figure 1)

ISD = 2 A, VGS = 0
I

= 2 A, di/dt = 100A/µs,

SD

V

= 10 V, Tj = 150°C

DD

(see test circuit, Figure 3)

38 ns

3.8 4.8 nC

45

11

1.2 V

15 ns

ns
ns

3/6

STS2DPF20V

Resistive Load

Fig. 3: Test Circuit For Diode Recovery Behaviour

Fig. 2: Gate Charge test CircuitFig. 1: Switching Times Test Circuit For

4/6

SO-8 MECHANICAL DATA

STS2DPF20V

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A1.750.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033

b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.019
c1 45 (typ.)

D 4.8 5.0 0.188 0.196

E 5.8 6.2 0.228 0.244

e1.27 0.050
e3 3.81 0.150

F 3.8 4.0 0.14 0.157

L 0.4 1.27 0.015 0.050

M0.60.023

S 8 (max.)

mm inch

0016023

5/6

STS2DPF20V

6/6

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