SGS Thomson Microelectronics STS2DPF20V Datasheet
STS2DPF20V
DUAL P-CHANNEL 20V - 0.14Ω - 2A SO-8
2.7V-DRIVE STripFET™ II POWER MOSFET
PRELIMINARY DATA
TYPE
V
DSS
STS2DPF20V 20 V
■ TYPICAL R
■ TYPICAL R
■ ULTRA LOW THRESHOLD GATE DRIVE (2.7V)
■ STANDARD OUTLINE FO R EASY
(on) = 0.14Ω (@4.5V)
DS
(on) = 0.2Ω (@2.7V)
DS
R
DS(on)
<0.20Ω (@4.5V)
<0.25Ω (@2.7V)
I
2 A
D
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor shows
extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable
manufacturing reproducibility.
APPLICATIONS
■ BATTERY MANAGMENT IN NOMAD IC
EQUIPMENT
■ POWER MANAGMENT IN CELLULAR PHONES
SO-8
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
(●)
DM
P
TOT
(●)Pulse width limited by safe operating are a
August 2001
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
20 V
20 V
Gate- source Voltage ± 12 V
Drain Current (continuos) at TC = 25°C Single Operation
Drain Current (continuos) at TC = 100°C Single Operation
2
1.26
Drain Current (pulsed) 8 A
Total Dissipation at TC = 25°C Dual Operation
Total Dissipation at TC = 25°C Single Operation
.
Note: For the P-CHANNEL MOSFET actual polarity of Voltages
1.6
2
and current has to be reversed
A
A
W
W
1/6
STS2DPF20V
THERMA L D ATA
Rthj-amb (*)Thermal Resistance Junction-ambient Single Operation
Dual Operation
T
stg
T
j
Storage Temperature -55 to 150 °C
Junction-ambient Temperature -55 to 150 °C
(*) When Mounted on 0.5 in² of 2 oz. Copper
MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID = 250 µA, VGS = 0 20 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ± 12 V ±100 nA
GS
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
= VGS, ID = 250µA
DS
VGS = 4.5 V, ID = 1 A
VGS = 2.7 V, ID = 1 A
62.5
78
°C/W
°C/W
1µA
10 µA
0.6 V
0.14 0.20 Ω
0.20 0.25 Ω
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS = 15 V, ID= 1.5 A 4.5 S
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 87 pF
Reverse Transfer
Capacitance
V
= 15V, f = 1 MHz, VGS = 0
DS
315 pF
17 pF
2/6
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